IRFB3607PBF - INFINEON TECHNOLOGIES AG

IRFB3607PbF

IRFS3607PbF

IRFSL3607PbF

VDSS 75V

RDS(on) typ. 7.34m

max. 9.0m

ID 80A

Applications

 High Efficiency Synchronous Rectification in

SMPS

 Uninterruptible Power Supply

 High Speed Power Switching

 Hard Switched and High Frequency Circuits

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Symbol Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 80

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 56

IDM Pulsed Drain Current  310

PD @TC = 25°C Maximum Power Dissipation 140 W

Linear Derating Factor 0.96 W/°C

VGS Gate-to-Source Voltage ± 20 V

TJ Operating Junction and -55 to + 175 

TSTG Storage Temperature Range °C

Soldering Temperature, for 10 seconds (1.6mm from case) 300 

Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m) 

HEXFET® Power MOSFET

TO-220AB

IRFB3607PbF D2-Pak

IRFS3607PbF

TO-262

IRFSL3607PbF

G D S

Gate Drain Source

Base part number Package Type Standard Pack Orderable Part Number

Form Quantity

IRFB3607PbF TO-220 Tube 50 IRFB3607PbF

IRFSL3607PbF TO-262 Tube 50 IRFSL3607PbF

IRFS3607PbF Tube 50 IRFS3607PbF

Tape and Reel Left 800 IRFS3607TRLPbF

D2-Pak

Benefits

 Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

 Fully Characterized Capacitance and

Avalanche SOA

 Enhanced body diode dV/dt and dI/dt

Capability

Thermal Resistance 

Symbol Parameter Typ. Max. Units

RJC Junction-to-Case  ––– 1.045

°C/W

RCS Case-to-Sink, Flat, Greased Surface , TO-220 0.50 –––

RJA Junction-to-Ambient , TO-220 ––– 62

RJA Junction-to-Ambient ( PCB Mount, steady state)  40

EAS (Thermally Limited) Single Pulse Avalanche Energy  120

IAR Avalanche Current  46 A

EAR Repetitive Avalanche Energy  14 mJ

Avalanche Characteristics

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Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Limited by TJmax, starting TJ = 25°C, L = 0.12mH, RG = 25, IAS = 46A, VGS =10V. Part not recommended for use above this value.

 I

SD 46A, di/dt 1920A/µs, VDD V(BR)DSS, TJ  175°C.

 Pulse width 400µs; duty cycle  2%.

 C

oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

 C

oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.

 When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to

application note #AN-994

 R

 is measured at TJ approximately 90°C.

Static @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.096 ––– V/°C Reference to 25°C, ID = 5mA 

RDS(on) Static Drain-to-Source On-Resistance ––– 7.34 9.0 m VGS = 10V, ID = 46A 

VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 100µA

IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 75V, VGS = 0V

––– ––– 250 VDS = 60V,VGS = 0V,TJ =125°C

IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

gfs Forward Trans conductance 115 ––– ––– S VDS = 50V, ID = 46A

Qg Total Gate Charge ––– 56 84

nC 

ID = 46A

Qgs Gate-to-Source Charge ––– 13 ––– VDS = 38V

Qgd Gate-to-Drain Charge ––– 16 ––– VGS = 10V

Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 40 –––

RG Internal Gate Resistance ––– 0.55 ––– 

td(on) Turn-On Delay Time ––– 16 –––

VDD = 49V

tr Rise Time ––– 110 ––– ID = 46A

td(off) Turn-Off Delay Time ––– 43 ––– RG= 6.8

tf Fall Time ––– 96 ––– VGS = 10V

Ciss Input Capacitance ––– 3070 –––

pF 

VGS = 0V

Coss Output Capacitance ––– 280 ––– VDS = 50V

Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5

Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 380 ––– VGS = 0V, VDS = 0V to 60V

Coss eff.(TR) Effective Output Capacitance (Time Related) ––– 610 ––– VGS = 0V, VDS = 0V to 60V

Diode Characteristics 

Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current ––– ––– 80

MOSFET symbol

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– 310 integral reverse

(Body Diode) p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 46A,VGS = 0V 

dv/dt Peak Diode Recovery  ––– 27 ––– V/ns TJ = 175°C,IS = 46A,VDS=75V 

trr Reverse Recovery Time ––– 33 50 ns TJ = 25°C VDD = 64V

––– 39 59 TJ = 125°C IF = 46A,

Qrr Reverse Recovery Charge ––– 32 48 nC TJ = 25°C di/dt = 100A/µs 

––– 47 71 TJ = 125°C 

IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C 

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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Fig. 2 Typical Output Characteristics

Fig. 3 Typical Transfer Characteristics

Fig. 1 Typical Output Characteristics

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

0.1 110 100

VDS, Drain-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

VGS

TOP 15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM 4.5V

60µs PULSE WIDTH

Tj = 25°C

4.5V

0.1 110 100

VDS, Drain-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

4.5V

60µs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM 4.5V

2345678

VGS, Gate-to-Source Voltage (V)

0.1

100

1000

ID, Drain-to-Source Current (A)

TJ = 25°C

TJ = 175°C

VDS = 25V

60µs PULSE WIDTH

-60 -40 -20 020 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

3.0

RDS(on) , Drain-to-Source On Resistance

(Normalized)

ID = 80A

VGS = 10V

Fig. 4 Normalized On-Resistance vs. Temperature

110 100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

C, Capacitance (pF)

VGS = 0V, f = 1 MHZ

Ciss = Cgs + C

gd, Cds SHORTED

Crss = Cgd

Coss = C

ds + C

Coss

Crss

Ciss

0 102030405060

QG, Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

VGS, Gate-to-Source Voltage (V)

VDS= 60V

VDS= 38V

VDS= 15V

ID= 46A

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Fig 8. Maximum Safe Operating Area

Fig 10. Drain-to-Source Breakdown Voltage

Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. Drain Current

Fg 9. Maximum Drain Current vs. Case Temperature

0.0 0.5 1.0 1.5 2.0

VSD, Source-to-Drain Voltage (V)

0.1

100

1000

ISD, Reverse Drain Current (A)

TJ = 25°C

TJ = 175°C

VGS = 0V

1 10 100

VDS, Drain-to-Source Voltage (V)

100

1000

ID, Drain-to-Source Current (A)

OPERATION IN THIS AREA

LIMITED BY R DS(on)

Tc = 25°C

Tj = 175°C

Single Pulse

100µsec

1msec

10msec

25 50 75 100 125 150 175

TC , Case Temperature (°C)

ID, Drain Current (A)

Fig. 7 Typical Source-to-Drain Diode

Forward Voltage

-60 -40 -20 020 40 60 80 100 120 140 160 180

TJ , Temperature ( °C )

100

V(BR)DSS, Drain-to-Source Breakdown Voltage (V)

Id = 5mA

-10 0 10 20 30 40 50 60 70 80

VDS, Drain-to-Source Voltage (V)

0.00

0.20

0.40

0.60

0.80

1.00

1.20

Energy (µJ)

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (°C)

100

150

200

250

300

350

400

450

500

EAS , Single Pulse Avalanche Energy (mJ)

TOP 5.6A

11A

BOTTOM 46A

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Fig 14. Avalanche Current vs. Pulse width

Fig 15. Maximum Avalanche Energy vs. Temperature

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.infineon.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.

4. PD (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. Iav = Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as

25°C in Figure 13, 14).

av = Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

thJC(D, tav) = Transient thermal resistance, see Figures 13)

PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC

Iav = 2T/ [1.3·BV·Zth]

EAS (AR) = PD (ave)·tav

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.00

0.01

0.10

1.00

10.00

Thermal Response ( Z thJC ) °C/W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

J

1

2

23

3

R1R2

R2R3

Ci= iRi

C

4

Ri (°C/W) i (sec)

0.01109 0.000003

0.49731 0.001301

0.26766 0.008693

0.26925 0.000130

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

0.1

100

1000

Avalanche Current (A)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  j = 25°C and

Tstart = 150°C.

0.01

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

25 50 75 100 125 150 175

Starting T J , Junction Temperature (°C)

100

125

150

EAR , Avalanche Energy (mJ)

TOP Single Pulse

BOTTOM 1.0% Duty Cycle

ID = 46A

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Fig 16. Threshold Voltage vs. Temperature

Fig. 18 - Typical Recovery Current vs. dif/dt

Fig. 20 - Typical Stored Charge vs. dif/dt

Fig. 19 - Typical Stored Charge vs. dif/dt

Fig. 17 - Typical Recovery Current vs. dif/dt

-75 -50 -25 025 50 75 100 125 150 175 200

TJ , Temperature ( °C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

VGS(th), Gate Threshold Voltage (V)

ID = 100µA

ID = 250µA

ID = 1.0mA

ID = 1.0A

0200 400 600 800 1000

diF /dt (A/µs)

IRR (A)

IF = 31A

VR = 64V

TJ = 25°C

TJ = 125°C

0200 400 600 800 1000

diF /dt (A/µs)

IRR (A)

IF = 46A

VR = 64V

TJ = 25°C

TJ = 125°C

0200 400 600 800 1000

diF /dt (A/µs)

160

240

320

400

480

560

QRR (nC)

IF = 31A

VR = 64V

TJ = 25°C

TJ = 125°C

0200 400 600 800 1000

diF /dt (A/µs)

160

240

320

400

480

560

QRR (nC)

IF = 46A

VR = 64V

TJ = 25°C

TJ = 125°C

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Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms

Fig 23a. Switching Time Test Circuit

Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform

0.01



D.U.T

VDS

-V

DRIVER

15V

20V

(BR)DSS

Fig 23b. Switching Time Waveforms

Vds

Vgs

Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

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TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

IN T E R N A T IO N A L PART NUMBER

R E C T IF IE R

LO T C O D E

ASSEM BLY

LO G O

YEAR 0 = 2000

DATE CODE

W EEK 19

LIN E C

LOT CODE 1789

E X A M P L E : T H IS IS A N IR F 1 0 1 0

N o te : "P " in a s s e m b ly lin e p o s itio n

indicates "Lead - Free"

IN TH E ASSEM BLY LINE "C"

ASSEM BLED O N W W 19, 2000

TO-220AB packages are not recommended for Surface Mount Application.

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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

D2-Pak (TO-263AB) Part Marking Information

D2-Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))

DATE CODE

YEAR 0 = 2000

WEEK 02

A = ASSEMBLY SITE CODE

RECTIFIER

INTERNATIONAL PART NUMBER

P = DESIGNATES LEAD - FREE

PRODUCT (OPTIONAL)

F530S

IN THE ASSEMBLY LINE "L"

ASSEMBLED ON WW 02, 2000

THIS IS AN IRF530S WITH

LOT CODE 8024 INTERNATIONAL

LOGO

RECTIFIER

LOT CODE

ASSEMBLY YEAR 0 = 2000

PART NUMBER

DATE CODE

LINE L

WEEK 02

F530S

LOGO

ASSEMBLY

LOT CODE

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TO-262 Part Marking Information

TO-262 Package Outline (Dimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

LOGO

RECTIFI ER

INTERNATIONAL

LOT CODE

ASSEMBLY

LOGO

RECTI FIER

INTERNATIONAL

DATE CODE

WEEK 19

YEAR 7 = 1997

PART NUMBER

A = ASSEMBLY SITE CODE

PRODUCT ( OPTIONAL)

P = DESIGNATES LEAD-FREE

EXAMPLE: THIS I S AN I RL3103L

LOT CODE 1789

ASSEMBLY

PART NUMBER

DATE CODE

WEEK 19

LINE C

LOT CODE

YEAR 7 = 1997

ASSEMBLED ON WW 19, 1997

IN THE ASSEMBLY LI NE "C"

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D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

TRR

FEED DIRECTION

1.85 (.073)

1.65 (.065)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

TRL

FEED DIRECTION

10.90 (.429)

10.70 (.421)

16.10 (.634)

15.90 (.626)

1.75 (.069)

1.25 (.049)

11.60 (.457)

11.40 (.449) 15.42 (.609)

15.22 (.601)

4.72 (.136)

4.52 (.178)

24.30 (.957)

23.90 (.941)

0.368 (.0145)

0.342 (.0135)

1.60 (.063)

1.50 (.059)

13.50 (.532)

12.80 (.504)

330.00

(14.173)

MAX.

27.40 (1.079)

23.90 (.941)

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

26.40 (1.039)

24.40 (.961)

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

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Published by

Infineon Technologies AG

81726 München, Germany

IMPORTANT NOTICE

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any

information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third

party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this

document and any applicable legal requirements, norms and standards concerning customer’s products and any use of

the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of

customer’s technical departments to evaluate the suitability of the product for the intended application and the

completeness of the product information given in this document with respect to such application.

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies office (www.infineon.com).

WARNINGS

Due to technical requirements products may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies office.

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized

representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a

failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

Revision History

Date Comments

02/17/2016

 Updated datasheet with corporate template

 Corrected Fig.6 label from VDS=24V & 15V to VDS= 60V,38V,15V-on page 3.

 Removed note 1 to correct typo on page 2.

 Corrected label for Fig.19 & Fig.20 from (A) to (nC) on page 6.

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Qualification Information† 

Qualification Level 

Industrial

Moisture Sensitivity Level TO-220 N/A

RoHS Compliant Yes

D2-Pak MSL1

TO-262 N/A