
IRFB/S/SL3607PbF
2 2016-2-17
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.12mH, RG = 25, IAS = 46A, VGS =10V. Part not recommended for use above this value.
I
SD 46A, di/dt 1920A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.096 ––– V/°C Reference to 25°C, ID = 5mA
RDS(on) Static Drain-to-Source On-Resistance ––– 7.34 9.0 m VGS = 10V, ID = 46A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 100µA
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 75V, VGS = 0V
––– ––– 250 VDS = 60V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs Forward Trans conductance 115 ––– ––– S VDS = 50V, ID = 46A
Qg Total Gate Charge ––– 56 84
nC
ID = 46A
Qgs Gate-to-Source Charge ––– 13 ––– VDS = 38V
Qgd Gate-to-Drain Charge ––– 16 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 40 –––
RG Internal Gate Resistance ––– 0.55 –––
td(on) Turn-On Delay Time ––– 16 –––
ns
VDD = 49V
tr Rise Time ––– 110 ––– ID = 46A
td(off) Turn-Off Delay Time ––– 43 ––– RG= 6.8
tf Fall Time ––– 96 ––– VGS = 10V
Ciss Input Capacitance ––– 3070 –––
pF
VGS = 0V
Coss Output Capacitance ––– 280 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 380 ––– VGS = 0V, VDS = 0V to 60V
Coss eff.(TR) Effective Output Capacitance (Time Related) ––– 610 ––– VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 80
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 310 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 46A,VGS = 0V
dv/dt Peak Diode Recovery ––– 27 ––– V/ns TJ = 175°C,IS = 46A,VDS=75V
trr Reverse Recovery Time ––– 33 50 ns TJ = 25°C VDD = 64V
––– 39 59 TJ = 125°C IF = 46A,
Qrr Reverse Recovery Charge ––– 32 48 nC TJ = 25°C di/dt = 100A/µs
––– 47 71 TJ = 125°C
IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)