IRFB3607PbF
IRFS3607PbF
IRFSL3607PbF
VDSS 75V
RDS(on) typ. 7.34m
max. 9.0m
ID 80A
Applications
High Efficiency Synchronous Rectification in
SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
1 2016-2-17
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 80
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 56
IDM Pulsed Drain Current 310
PD @TC = 25°C Maximum Power Dissipation 140 W
Linear Derating Factor 0.96 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
HEXFET® Power MOSFET
TO-220AB
IRFB3607PbF D2-Pak
IRFS3607PbF
TO-262
IRFSL3607PbF
S
D
G
S
D
G
S
D
G
D
G D S
Gate Drain Source
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFB3607PbF TO-220 Tube 50 IRFB3607PbF
IRFSL3607PbF TO-262 Tube 50 IRFSL3607PbF
IRFS3607PbF Tube 50 IRFS3607PbF
Tape and Reel Left 800 IRFS3607TRLPbF
D2-Pak
Benefits
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche SOA
Enhanced body diode dV/dt and dI/dt
Capability
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.045
°C/W
RCS Case-to-Sink, Flat, Greased Surface , TO-220 0.50 –––
RJA Junction-to-Ambient , TO-220 ––– 62
RJA Junction-to-Ambient ( PCB Mount, steady state) 40
EAS (Thermally Limited) Single Pulse Avalanche Energy 120
mJ
IAR Avalanche Current 46 A
EAR Repetitive Avalanche Energy 14 mJ
Avalanche Characteristics
D
IRFB/S/SL3607PbF
2 2016-2-17
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.12mH, RG = 25, IAS = 46A, VGS =10V. Part not recommended for use above this value.
I
SD 46A, di/dt 1920A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
C
oss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
C
oss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.096 ––– V/°C Reference to 25°C, ID = 5mA
RDS(on) Static Drain-to-Source On-Resistance ––– 7.34 9.0 m VGS = 10V, ID = 46A 
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 100µA
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 75V, VGS = 0V
––– ––– 250 VDS = 60V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
gfs Forward Trans conductance 115 ––– ––– S VDS = 50V, ID = 46A
Qg Total Gate Charge ––– 56 84
nC
ID = 46A
Qgs Gate-to-Source Charge ––– 13 ––– VDS = 38V
Qgd Gate-to-Drain Charge ––– 16 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 40 –––
RG Internal Gate Resistance ––– 0.55 ––– 
td(on) Turn-On Delay Time ––– 16 –––
ns
VDD = 49V
tr Rise Time ––– 110 ––– ID = 46A
td(off) Turn-Off Delay Time ––– 43 ––– RG= 6.8
tf Fall Time ––– 96 ––– VGS = 10V
Ciss Input Capacitance ––– 3070 –––
pF
VGS = 0V
Coss Output Capacitance ––– 280 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 130 ––– ƒ = 1.0MHz, See Fig. 5
Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 380 ––– VGS = 0V, VDS = 0V to 60V
Coss eff.(TR) Effective Output Capacitance (Time Related) ––– 610 ––– VGS = 0V, VDS = 0V to 60V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 80
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 310 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 46A,VGS = 0V 
dv/dt Peak Diode Recovery ––– 27 ––– V/ns TJ = 175°C,IS = 46A,VDS=75V 
trr Reverse Recovery Time ––– 33 50 ns TJ = 25°C VDD = 64V
––– 39 59 TJ = 125°C IF = 46A,
Qrr Reverse Recovery Charge ––– 32 48 nC TJ = 25°C di/dt = 100A/µs 
––– 47 71 TJ = 125°C
IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
IRFB/S/SL3607PbF
3 2016-2-17
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
2345678
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
VDS = 25V
60µs PULSE WIDTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 80A
VGS = 10V
Fig. 4 Normalized On-Resistance vs. Temperature
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + C
gd, Cds SHORTED
Crss = Cgd
Coss = C
ds + C
gd
Coss
Crss
Ciss
0 102030405060
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
VGS, Gate-to-Source Voltage (V)
VDS= 60V
VDS= 38V
VDS= 15V
ID= 46A
IRFB/S/SL3607PbF
4 2016-2-17
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy vs. Drain Current
Fg 9. Maximum Drain Current vs. Case Temperature
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
10
20
30
40
50
60
70
80
ID, Drain Current (A)
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
70
75
80
85
90
95
100
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
Id = 5mA
-10 0 10 20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
0.00
0.20
0.40
0.60
0.80
1.00
1.20
Energy (µJ)
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
50
100
150
200
250
300
350
400
450
500
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 5.6A
11A
BOTTOM 46A
IRFB/S/SL3607PbF
5 2016-2-17
Fig 14. Avalanche Current vs. Pulse width
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.infineon.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.00
0.01
0.10
1.00
10.00
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
23
3
R1
R1R2
R2R3
R3
Ci= iRi
Ci= iRi
C
C
4
4
R4
R4
Ri (°C/W) i (sec)
0.01109 0.000003
0.49731 0.001301
0.26766 0.008693
0.26925 0.000130
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  j = 2C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting T J , Junction Temperature (°C)
0
25
50
75
100
125
150
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 46A
IRFB/S/SL3607PbF
6 2016-2-17
Fig 16. Threshold Voltage vs. Temperature
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical Recovery Current vs. dif/dt
-75 -50 -25 025 50 75 100 125 150 175 200
TJ , Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th), Gate Threshold Voltage (V)
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
0200 400 600 800 1000
diF /dt (A/µs)
0
5
10
15
20
IRR (A)
IF = 31A
VR = 64V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
5
10
15
20
IRR (A)
IF = 46A
VR = 64V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
80
160
240
320
400
480
560
QRR (nC)
IF = 31A
VR = 64V
TJ = 25°C
TJ = 125°C
0200 400 600 800 1000
diF /dt (A/µs)
0
80
160
240
320
400
480
560
QRR (nC)
IF = 46A
VR = 64V
TJ = 25°C
TJ = 125°C
IRFB/S/SL3607PbF
7 2016-2-17
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms
Fig 23a. Switching Time Test Circuit
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 23b. Switching Time Waveforms
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
IRFB/S/SL3607PbF
8 2016-2-17
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
IN T E R N A T IO N A L PART NUMBER
R E C T IF IE R
LO T C O D E
ASSEM BLY
LO G O
YEAR 0 = 2000
DATE CODE
W EEK 19
LIN E C
LOT CODE 1789
E X A M P L E : T H IS IS A N IR F 1 0 1 0
N o te : "P " in a s s e m b ly lin e p o s itio n
indicates "Lead - Free"
IN TH E ASSEM BLY LINE "C"
ASSEM BLED O N W W 19, 2000
TO-220AB packages are not recommended for Surface Mount Application.
IRFB/S/SL3607PbF
9 2016-2-17
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
D2-Pak (TO-263AB) Part Marking Information
D2-Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
DATE CODE
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
RECTIFIER
INTERNATIONAL PART NUMBER
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
F530S
IN THE ASSEMBLY LINE "L"
ASSEMBLED ON WW 02, 2000
THIS IS AN IRF530S WITH
LOT CODE 8024 INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
ASSEMBLY YEAR 0 = 2000
PART NUMBER
DATE CODE
LINE L
WEEK 02
OR
F530S
LOGO
ASSEMBLY
LOT CODE
IRFB/S/SL3607PbF
10 2016-2-17
TO-262 Part Marking Information
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
LOGO
RECTIFI ER
INTERNATIONAL
LOT CODE
ASSEMBLY
LOGO
RECTI FIER
INTERNATIONAL
DATE CODE
WEEK 19
YEAR 7 = 1997
PART NUMBER
A = ASSEMBLY SITE CODE
OR
PRODUCT ( OPTIONAL)
P = DESIGNATES LEAD-FREE
EXAMPLE: THIS I S AN I RL3103L
LOT CODE 1789
ASSEMBLY
PART NUMBER
DATE CODE
WEEK 19
LINE C
LOT CODE
YEAR 7 = 1997
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LI NE "C"
IRFB/S/SL3607PbF
11 2016-2-17
D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
IRFB/S/SL3607PbF
12 2016-2-17
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
02/17/2016
 Updated datasheet with corporate template
 Corrected Fig.6 label from VDS=24V & 15V to VDS= 60V,38V,15V-on page 3.
 Removed note 1 to correct typo on page 2.
 Corrected label for Fig.19 & Fig.20 from (A) to (nC) on page 6.
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Qualification Information
Qualification Level
Industrial
Moisture Sensitivity Level TO-220 N/A
RoHS Compliant Yes
D2-Pak MSL1
TO-262 N/A