BSL202SN
OptiMOS®2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Super Logic level (2.5V rated)
• Avalanche rated
• dv/dt rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 7.5 A
TA=70 °C 6.0
Pulsed drain current ID,pulse TA=25 °C 30
Avalanche energy, single pulse EAS ID=7.5 A, RGS=25 Ω30 mJ
Reverse diode dv/dtdv/dtID=7.5 A, VDS=16 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±12 V
Power dissipation1) Ptot TA=25 °C 2W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
ESD Class JESD22-A114 -HBM 0 (0V to 250V)
Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
TSOP-6
1
2
3
4
5
6
VDS 20 V
RDS(on),max VGS=4.5 V 22 mΩ
VGS=2.5 V 36
ID7.5 A
Product Summary
Type Package Tape and Reel Information Marking Lead Free Packing
BSL202SN TSOP-6 L6327: 3000 pcs/ reel sPD Yes Non dry
Rev 1.08 page 1 2011-05-23
BSL202SN
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint RthJS - - 50 K/W
SMD version, device on PCB RthJA minimal footprint - - 230
6 cm2 cooling area1) - - 62.5
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS= 0 V, ID= 250 µA 20 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=30 µA 0.7 0.95 1.2
Drain-source leakage current IDSS VDS=20 V, VGS=0 V,
Tj=25 °C --1
μA
VDS=20 V, VGS=0 V,
Tj=150 °C - - 100
Gate-source leakage current IGSS VGS=12 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=2.5 V, ID=5.9 A -2636
mΩ
VGS=4.5 V, ID=7.5 A -1722
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=7.5 A 25 - S
Values
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2 (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
(
t < 5 sec.
)
Rev 1.08 page 2 2011-05-23
BSL202SN
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 863 1147 pF
Output capacitance Coss - 278 370
Reverse transfer capacitance Crss -4060
Turn-on delay time td(on) - 8.26 - ns
Rise time tr- 27.5 -
Turn-off delay time td(off) - 18.9 -
Fall time tf- 4.06 -
Gate Charge Characteristics
Gate to source charge Qgs - 1.82 2.42 nC
Gate to drain charge Qgd - 1.1 1.6
Gate charge total Qg- 5.8 8.7
Gate plateau voltage Vplateau -2-V
Reverse Diode
Diode continous forward current IS--2A
Diode pulse current IS,pulse --30
Diode forward voltage VSD VGS=0 V, IF=7.5 A,
Tj=25 °C - 0.8 1.2 V
Reverse recovery time trr - 14.7 - ns
Reverse recovery charge Qrr - 4.62 - nC
VR=10 V, IF=7.5 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=10 V,
f=1 MHz
VDD=10 V, VGS=4.5 V,
ID=7.5 A, RG=6 Ω
VDD=10 V, ID=7.5 A,
VGS=0 to 4.5 V
Rev 1.08 page 3 2011-05-23
BSL202SN
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥4.5 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
10 µs
100 µs
1 ms
10 ms
DC
10-2 10-1 100101102
10-3
10-2
10-1
100
101
102
VDS [V]
ID [A]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
101
100
10-1
10-2
10-3
10-4
10-5
102
101
100
10-1
tp [s]
ZthJA [K/W]
0
0.4
0.8
1.2
1.6
2
0 40 80 120 160
TA [°C]
Ptot [W]
0
1
2
3
4
5
6
7
8
0 40 80 120 160
TA [°C]
ID [A]
Rev 1.08 page 4 2011-05-23
BSL202SN
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
1.8 V 2 V
2.2 V
2.5 V
3 V
3.5 V
4.5 V
6 V
0
10
20
30
40
50
60
0481216
ID [A]
RDS(on) [mΩ]
0
5
10
15
20
25
30
012345678
ID [A]
gfs [S]
1.6 V
1.8 V
2 V
2.2 V
2.4 V
2.5 V
3 V
4.5 V
0
2
4
6
8
10
12
14
16
0123
VDS [V]
ID [A]
25 °C
150 °C
0
1
2
3
4
5
6
7
8
0123
VGS [V]
ID [A]
Rev 1.08 page 5 2011-05-23
BSL202SN
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=7.5 A; VGS=4.5 V VGS(th)=f(Tj); VDS=VGS; ID=30 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
98 %
0
10
20
30
40
-60 -20 20 60 100 140
Tj [°C]
RDS(on) [mΩ]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
-60 -20 20 60 100 140
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
101
102
103
104
0 5 10 15 20
VDS [V]
C [pF]
25 °C
150 °C 25 °C, 98%
150 °C, 98%
102
101
100
10-1
10-2
10-3
0 0.4 0.8 1.2 1.6
VSD [V]
IF [A]
Rev 1.08 page 6 2011-05-23
BSL202SN
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=7.5 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=250 µA
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140
Tj [°C]
VBR(DSS) [V]
4 V
10 V
16 V
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14
Qgate [nC]
VGS [V]
25 °C
100 °C
125 °C
103
102
101
100
101
100
10-1
tAV [µs]
IAV [A]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
Rev 1.08 page 7 2011-05-23
BSL202SN
Package Outline:
Footprint: Packaging:
Dimensions in mm
TSOP6
GPX09300
1.6±0.1
±0.1
2.5
±0.1
0.25
1.1 MAX.
0.1 MAX.
(2.25)
+0.1
-0.05
0.35
(0.35)
10
˚
MAX.
10
˚
MAX.
2.9
±0.2
B
0.2
M
B6x
0.95
1.9
A
0.2 A
M
0.15
+0.1
-0.06
321
456
0.5
0.95
1.9
2.9
HLG09283
Remark: Wave soldering possible dep.
on customers process conditions
2.7
4
3.15
Pin 1
marking CPWG5899
8
0.2
1.15
Rev 1.08 page 8 2011-05-23
BSL202SN
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev 1.08 page 9 2011-05-23
