On-State Current
1 Amp
This series of TRIACs uses a high
performance PNPN technology.
These parts are intended for general
purpose AC switching applications
with highly inductive loads.
Absolute Maximum Ratings, according to IEC publication No. 134
Absolute Maximum Ratings, according to IEC publication No. 134
Off-State Voltage
200 V ÷ 800 V (07, 09)
200 V ÷ 600 V (02, 03, 04, 05)
RMS On-state Current (full sine wave)
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Average Gate Power Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
IT(RMS)
PARAMETER
CONDITIONS
Value Unit
SYMBOL
ITSM
I2
t
IGM
PG(AV)
Tj
Tstg
All Conduction Angle, TC = 95 ºC
Full Cycle, 60 Hz (t = 16.7 ms)
Full Cycle, 50 Hz (t = 20 ms)
tp = 10 ms, Half Cycle
20 µs max. Tj =125ºC
Tj =125ºC
I
G
= 2x I
G
T, tr
£
100ns
f= 120 Hz, Tj =125ºC
A
A
A
A
2
s
A
W
A/µs
ºC
ºC
dI/dt
ITSM
Repetitive Peak Off State
Voltage
PARAMETER
VOLTAGE
Unit
SYMBOL
VDRM
VRRM
B
200 V
M
600
D
400
Tsld
Soldering Temperature 10s max 260 ºC
N *
800
S *
700
FT01...N
Apr - 06
LOGIC LEVEL TRIAC
Gate Trigger Current
< 10 mA
1
8.5
8
0.32
1
0.1
20
(-40 +125)
(-40 +150)
* 07, 09 sensitivities
SOT223
(Plastic)
G
MT2
MT2
MT1
Electrical Characteristics
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
F T 01 02 B N 00
FORMING
RB
PACKAGING
P
PART NUMBER INFORMA
ART NUMBER INFORMATION
TION
FT01...N
(1) Minimum I
GT
is guaranted at 5% of I
GT
max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
LOGIC LEVEL TRIAC
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
(1)
Gate Trigger Current
VD = 12 VDC , RL = 33
W
, Tj = 25 ºC Q1÷Q3 MAX mA
V
TM
(2)
On-state Voltage I
T
= 1.1 Amp, tp = 380 µs, T
j
= 25 ºC
MAX 1.5 V
V
GT
Gate Trigger Voltage
VD = 12 VDC , RL = 33
W
, Tj = 25 ºC Q1÷Q3 MAX 1.3 V
V
GD
Gate Non Trigger Voltage
VD = VDRM , RL = 3.3K
W
, Tj = 125 ºC Q1÷Q3 MIN 0.2 V
I
L
Latching Current
IG = 1.2 IGT, Tj = 25 ºC Q1, Q3 MAX mA
dV/dt
(2)
Critical Rate of Voltage Rise
VD = 0.67 x VDRM
, Gate open
MIN V/µs
R
th(j-a)
Thermal Resistance
Junction-Ambient
Quadrant
ºC/W
R
th(j-c)
Thermal Resistance for AC 360º conduction angle 80 ºC/W
2
S =5cm
(dv/dt)c= 10 V/µs Tj = 125 ºC
MIN A/ms
T
j
= 125 ºC
I
H
(2)
Holding Current I
T = 50 mA , Gate open, Tj = 25 ºC MAX mA
Q2 MAX mA
(dI/dt)c (2)
Critical Rate of Current Rise
(dv/dt)c= 0.1 V/µs Tj = 125 ºC
MIN A/ms
Vt(o)
(2)
Threshold Voltage T
j
= 125 ºC
MAX 0.95 V
rd
(2)
Dynamic Resistance T
j
= 125 ºC
MAX 1000 m
W
I
DRM
/I
RRM
Off-State Leakage Current
VD = VDRM , Tj = 125 ºC MAX 0.5 mA
VR = VRRM , Tj = 25 ºC MAX 5 µ
A
Junction-Case
60
Q1÷Q4 MAX 1.3 V
Q1÷Q4 MIN 0.2 V
Q1,Q3,Q4 MAX mA
Q4 MAX mA
without snubber
Tj = 125 ºC
MIN
09
07
10
5
10
7
15
20 25
10
10
15
10
05
5
5
04
5
02
3
3
03
3
5
10 20 20 20 50
10 10
10
10
20 20
10
15
77
77
1.2 2.5
1.8 1.8
0.6 0.9 0.9 1.5
1.8
0.9
1.2
0.6
Apr - 06
FT01...N
LOGIC LEVEL TRIAC
1E+0
1E-1
1E-2
K=[Zth / Rth]
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
tp (s)
Fig. 1: Maximum power dissipation versus
RMS on-state curren (full cycle).
Fig. 2: RMS on-state current versus case
temperature (full cycle).
Fig. 3: : Relative variation of thermal
impedance versus pulse duration.
Fig. 5: Surge peak on-state current versus
number of cycles
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp<10ms, and corresponding value of I2t.
Fig. 4: On-state characteristics (maximum
values)
Zth(j-c)
Zth(j-a)
0
P (W)
IT(RMS)(A)
0.5
a
360
º
I T(RMS) (A)
1.25
1.0
0.75
0.50
0.25
0
0 25 50 75 100 125
ITSM(A). I2t (A2s)
tp(ms)
Number of cycles
0.70.60.4
0.3
0.20.1
012 3
ITM(A)
45
Tj max
Vto = 0.95
V
Rt = 0.600ý
VTM(V)
Tj
max
Tj initial
25 ºC
10
1
0.1
1 10 100 1,000
I TSM
Tj initial = 25 ºC
Number of cycles
8
7
6
5
4
3
2
1
0
1
100
10
1
0.1 10
Tj initial = 25 ºC
I2 t
ITSM
0.8 0.91.0
1.25
1.0
0.75
0.50
0.25
0
Apr - 06
FT01...N
Fig. 8: Relative variation of critical rate of
decrease of main current versus junction
temperature
Fig. 7: Relative variation of gate trigger
current, holding current and latching versus
junction temperature (typical values)
0 50 75 100 125
0 20 40 60 80 100 120 140
0
0.5
2.0
1.0
1.5
2.5
25
(dI/dt)c [Tj]/(dI/dc)c [Tj specified]
6
5
4
3
2
1
0
IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25ºC]
Tj(ºC) Tj(ºC)
-40 -20
IGT
I
H
&I
L
Fig. 9: Relative variation of critical rate
of decrease of main current versus
LOGIC LEVEL TRIAC
(dV/dt)c (typical values).
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1 1.0 10.0 100.0
(dV/dt)c (V/
µ
S)
PACKAGE MECHANICAL DATA
SOT223 (Plastic)
A
B
C
D
E
F
G
H
I
J
K
REF.
DIMENSIONS
Milimeters
Min. Typ. Max.
Weight: 0.11 g
FOOT PRINT
6.30
6.70
3.30
-
-
2.95
0.65
1.50
0.50
-
0.25
6.50
7.00
3.50
4.60
2.30
3.00
0.70
1.60
0.60
0.02
0.30
6.70
7.30
3.70
-
-
3.15
0.85
1.70
0.70
0.05
0.35
3.3
1.5
1.5
(3x) 1 2.3
4.6
6.4
G
F
A
16º
max.
(4x)
H
D
EI
B
C
J
10º
max.
K
Apr - 06
