FT01...N LOGIC LEVEL TRIAC SOT223 (Plastic) Gate Trigger Current < 10 mA On-State Current 1 Amp Off-State Voltage 200 V / 800 V (07, 09) MT2 200 V / 600 V (02, 03, 04, 05) MT1 MT2 G This series of TRIACs uses a high perfor mance PNPN technology. These parts are intended for general purpose AC switching applications with highly inductive loads. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL IT(RMS) ITSM ITSM I2t IGM PG(AV) dI/dt Tj Tstg Tsld SYMBOL VDRM VRRM PARAMETER RMS On-state Current (full sine wave) Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Average Gate Power Dissipation Critical rate of rise of on-state current CONDITIONS Value (-40 +125) (-40 +150) C C Full Cycle, 50 Hz (t = 20 ms) tp = 10 ms, Half Cycle Tj =125C Tj =125C IG = 2x IGT, tr 100ns f= 120 Hz, Tj =125C 10s max 260 C VOLTAGE PARAMETER Repetitive Peak Off State Voltage A A A A2s A W A/s Full Cycle, 60 Hz (t = 16.7 ms) Operating Temperature Storage Temperature Soldering Temperature 1 8.5 8 0.32 1 0.1 20 All Conduction Angle, TC = 95 C 20 s max. B 200 D 400 M 600 Unit Unit S* 700 N* 800 V * 07, 09 sensitivities Apr - 06 FT01...N LOGIC LEVEL TRIAC Electrical Characteristics SYMBOL PARAMETER Quadrant CONDITIONS Unit SENSITIVITY 02 03 04 05 07 09 IGT (1) Gate Trigger Current VD = 12 VDC , RL = 33W, VGT Gate Trigger Voltage VD = 12 VDC , RL = 33W, VGD Gate Non Trigger Voltage VD = VDRM , RL = 3.3KW, IH (2) IL Holding Current Latching Current dV/dt (2) (dI/dt)c (2) VTM (2) Vt(o) (2) rd (2) IDRM/IRRM Rth(j-c) Rth(j-a) Tj = 25 C Q1/Q3 MAX 3 Q4 MAX 3 Tj = 25 C Q1/Q3 MAX Q1/Q4 MAX Tj = 125 C Q1/Q3 Q1/Q4 IT = 50 mA , Gate open, Tj = 25 C IG = 1.2 IGT, Tj = 25 C Q1, Q3 Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open Tj = 125 C Critical Rate of Current Rise (dv/dt)c= 0.1 V/s Tj = 125 C MIN MIN MAX MAX Q1,Q3,Q4 MAX Q2 MAX MIN 3 5 5 5 5 1.3 1.3 5 10 mA 7 10 mA V V 0.2 0.2 7 7 10 10 10 10 7 7 10 10 15 15 20 20 20 10 10 20 20 20 V V 10 mA mA 15 mA 25 mA 50 V/s (dv/dt)c= 10 V/s Tj = 125 C without snubber Tj = 125 C IT = 1.1 Amp, tp = 380 s, Tj = 25 C Tj = 125 C MIN 1.2 1.2 1.8 1.8 1.8 2.5 A/ms MIN 0.6 0.6 0.9 0.9 0.9 1.5 A/ms MIN MAX 1.5 V MAX 0.95 V Dynamic Resistance Off-State Leakage Current Tj = 125 C VD = VDRM , VR = VRRM , MAX MAX MAX Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient On-state Voltage Threshold Voltage 1000 0.5 5 mW mA A for AC 360 conduction angle 80 C/W S =5cm 2 60 C/W Tj = 125 C Tj = 25 C (1) Minimum IGT is guaranted at 5% of IGT max. (2) For either polarity of electrode MT2 voltage with reference to electrode MT1. PART NUMBER INFORMATION F T 01 02 B N 00 RB FAGOR PACKAGING FORMING TRIAC CURRENT CASE VOLTAGE SENSITIVITY Apr - 06 FT01...N LOGIC LEVEL TRIAC Fig. 1: Maximum power dissipation versus RMS on-state curren (full cycle). P (W) 1.25 Fig. 2: RMS on-state current versus case temperature (full cycle). 1.25 1.0 1.0 0.75 0.75 0.50 0.50 360 0.25 I T(RMS) (A) 0.25 a 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.91.0 IT(RMS)(A) Fig. 3: : Relative variation of thermal impedance versus pulse duration. 0 0 25 50 75 100 125 Fig. 4: On-state characteristics (maximum values) ITM(A) K=[Zth / Rth] 10 1E+0 Tj initial 25 C Zth(j-c) Tj max 1 1E-1 Zth(j-a) Tj max Vto = 0.95 V Rt = 0.600y 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 tp (s) Fig. 5: Surge peak on-state current versus number of cycles VTM(V) 0.1 0 2 3 4 5 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. I TSM 8 1 100 Tj initial = 25 C ITSM(A). I2t (A2s) Tj initial = 25 C 7 ITSM 6 10 5 4 3 1 I2 t 2 1 0 Number of cycles 1 10 Number of cycles 100 1,000 0.1 1 10 tp(ms) Apr - 06 FT01...N LOGIC LEVEL TRIAC Fig. 7: Relative variation of gate trigger current, holding current and latching versus junction temperature (typical values) Fig. 8: Relative variation of critical rate of decrease of main current versus junction temperature IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25C] (dV/dt)c (typical values). (dI/dt)c [Tj]/(dI/dc)c [Tj specified] 2.5 6 2.0 5 2.0 1.8 1.6 IGT 4 1.5 1.0 Fig. 9: Relative variation of critical rate of decrease of main current versus 1.4 3 IH&IL 1.2 1.0 2 0.8 0.5 1 Tj(C) 0 -40 -20 0 20 40 60 80 100 120 140 0 0 PACKAGE MECHANICAL DATA A 16 max. 0.6 25 50 75 100 Tj(C) 125 0.4 (dV/dt)c (V/S) 0.1 REF. C 10 max. H E I 10.0 100.0 SOT223 (Plastic) B (4x) 1.0 J K D F G A B C D E F G H I J K Min. 6.30 6.70 3.30 2.95 0.65 1.50 0.50 0.25 DIMENSIONS Milimeters Typ. Max. 6.70 6.50 7.30 7.00 3.70 3.50 4.60 2.30 3.15 3.00 0.85 0.70 1.70 1.60 0.70 0.60 0.05 0.02 0.35 0.30 Weight: 0.11 g FOOT PRINT 3.3 1.5 (3x) 1 2.3 6.4 1.5 4.6 Apr - 06