©2000 Fairchild Semiconductor International Rev. A, February 2000
BU508AF
TO-3PF
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed
Symbol Parameter Value Units
VCES Collector-Emitter Voltage 1500 V
VCEO Collector-Emitter Voltage 700 V
VEBO Emitte r -Base Voltage 5 V
IC Collector Current (DC) 5 A
ICP *Collector Current (Pulse) 15 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage IC = 100mA, IB = 0 700 V
BVEBO Emitter-Base Breakdown Voltage IE = 10mA, IC = 0 5 V
ICES Collector Cut-off Current VCE = 1500V, VBE = 0 1 mA
IEBO Em itter Cut-off Current VEB = 5V, IC = 0 10 mA
hFE * DC Current Gain VCE = 5V, IC = 4.5A 2.25
VCE(sat) * Collector-Emitter Saturation Voltage IC = 4.5A, IB = 2A 1 V
VBE(sat) * Base-Emitter Satur ation Voltage IC = 4.5A, IB = 2A 1.5 V
BU508AF
TV Horizontal Output Applications
1.Base 2.Collector 3.Emitter
1
©2000 Fairchild Semiconductor International
BU508AF
Rev. A, February 2000
Typical Characteristics
Figure 1. Static Characteristic Figure 2. Base-Emitter Saturation Vo ltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
0.01 0.1 1 10
0.1
1
10
100 VCE = 5V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
10000
IC = 2 IB
VBE(sat)[mV], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
10
100
1000
10000
IC = 2 IB
VCE(sat)[mV], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
110100
10
100
1000
f = 1MHz
Cob [pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
1 10 100 1000
0.01
0.1
1
10
100
IC Max. (Continuous)
IC Max. (Pulsed)
DC
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COL L EC TOR - EM ITT E R VOL TA G E
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
PD [W], POWER DISSIPATIOAN
TC[oC], CASE TEMPERATURE
15.50
±0.20
ø3.60
±0.20
26.50
±0.20
4.50
±0.20
10.00
±0.20
16.50
±0.20
10°
16.50
±0.20
22.00
±0.20
23.00
±0.20
1.50
±0.20
14.50
±0.20
2.00
±0.20
2.00
±0.20
2.00
±0.20
0.85
±0.03
2.00
±0.20
5.50
±0.20
3.00
±0.20
(1.50)
3.30
±0.20
2.00
±0.20
4.00
±0.20
2.50
±0.20
14.80
±0.20
3.30
±0.20
2.00
±0.20
5.50
±0.20
0.75
+0.20
–0.10
0.90
+0.20
–0.10
5.45TYP
[5.45
±0.30
]5.45TYP
[5.45
±0.30
]
TO-3PF
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BU508AF
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Statu s Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor .
The datasheet is printed for reference information only.
Product Folder - Fairchild P/N BU508AF - NPN Triple Diffused Planar Silicon Transistor
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Product Product status Pricing* Package type Leads Packing method
BU508AFTBTU Full Production $1.11 TO-3PF 3 RAIL
* 1,000 piece Budgetary Pricing
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