07/21/10
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TO-220AB
AUIRFB3207
AUIRFB3207
HEXFET® Power MOSFET
S
D
G
AUTOMOTIVE GRADE
S
D
G
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
V
(BR)DSS
75V
R
DS(on)
typ. 3.6mΩ
max. 4.5mΩ
I
D (Silicon Limited)
170A
c
I
D (Package Limited)
75A
GDS
Gate Drain Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise
specified.
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Parameter Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Package Limited)
I
DM
Pulsed Drain Current
d
P
D
@T
C
= 25°C Maximum Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Sin
g
le Pulse Avalanche Ener
g
y (Thermally limited)
e
mJ
I
AR
Avalanche Current
d
A
E
AR
Repetitive Avalanche Energy mJ
dV/dt Peak Diode Recovery
f
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
j
––– 0.50
R
θCS
Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W
R
θJA
Junction-to-Ambient, TO-220 ––– 62
A
°C
75
300
910
See Fig. 14, 15, 16a, 16b,
Max.
170
c
120
c
720
300
5.8
-55 to + 175
± 20
2.0
10lb
x
in (1.1N
x
m)
PD - 96322
AUIRFB3207
2www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.33mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
Rθ is measured at TJ approximately 90°C.
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
g
e 75 ––– ––– V
∆V
(BR)DSS
/
∆T
J
Breakdown Volta
g
e Temp. Coefficient ––– 0.069 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.6 4.5 mΩ
V
GS(th)
Gate Threshold Volta
g
e 2.0 ––– 4.0 V
g
fs Forward Transconductance 150 ––– ––– S
R
G
Gate Input Resistance ––– 1.2 ––– Ωf = 1MHz, open drain
I
DSS
Drain-to-Source Leaka
g
e Current ––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
g
e ––– ––– 200
Gate-to-Source Reverse Leaka
e ––– ––– -200
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Char
g
e ––– 180 260
Q
gs
Gate-to-Source Char
g
e ––– 48 –––
Q
gd
Gate-to-Drain ("Miller") Char
g
e ––– 68 –––
t
d(on)
Turn-On Delay Time ––– 29 –––
t
r
Rise Time ––– 120 –––
t
d(off)
Turn-Off Delay Time ––– 68 –––
t
f
Fall Time ––– 74 –––
C
iss
Input Capacitance ––– 7600 –––
C
oss
Output Capacitance ––– 710 –––
C
rss
Reverse Transfer Capacitance ––– 390 –––
C
oss
eff. (ER) Effective Output Capacitance (Energy Related)
i
––– 920 –––
C
oss
eff. (TR) Effective Output Capacitance (Time Related)
h
––– 1010 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
di
V
SD
Diode Forward Volta
g
e ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 42 63 T
J
= 25°C V
R
= 64V,
––– 49 74 T
J
= 125°C I
F
= 75A
Q
rr
Reverse Recovery Char
g
e ––– 65 98 T
J
= 25°C
di/d
t
=
100A/
µs
g
––– 92 140 T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 2.6 ––– A T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is ne
g
li
g
ible (turn-on is dominated by LS+LD)
170
c
720
––– –––
––– –––
nA
µA
ns
nC
A
pF
ns
nC
Conditions
V
DS
= 50V, I
D
= 75A
I
D
= 75A
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
V
DS
= 60V
Conditions
V
GS
= 10V
g
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V , See Fig.11
V
GS
= 0V, V
DS
= 0V to 60V , See Fig. 5
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
g
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
d
V
GS
= 10V, I
D
= 75A
g
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
I
D
= 75A
R
G
= 2.6Ω
V
GS
= 10V
g
V
DD
= 48V
AUIRFB3207
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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Exceptions to AEC-Q101 requirements are noted in the qualification report.
Qualification Information
†
3L-TO-220 N/A
RoHS Compliant Yes
ESD
Machine Model Class M4(425V)
(per AEC-Q101-002)
Human Body Model Class H2(4000V)
(per AEC-Q101-001)
Charged Device
Model
Class C5 (1125V)
(per AEC-Q101-005)
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
AUIRFB3207
4www.irf.com
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
≤ 60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
≤ 60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
BOTTOM 4.5V
4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate-to-Source Voltage (V)
1.0
10.0
100.0
1000.0
ID, Drain-to-Source Current
(Α)
VDS = 50V
≤ 60µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 75A
VGS = 10V
110 100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
0 40 80 120 160 200 240 280
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 60V
VDS= 38V
ID= 75A
AUIRFB3207
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Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
70
80
90
100
V(BR)DSS , Drain-to-Source Breakdown Voltage
20 30 40 50 60 70 80
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Energy (µJ)
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (°C)
0
1000
2000
3000
4000
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 12A
16A
BOTTOM 75A
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
DC
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
50
100
150
200
ID, Drain Current (A)
Limited By Package
AUIRFB3207
6www.irf.com
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z
thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Ri (°C/W) τi (sec)
0.2151 0.001175
0.2350 0.017994
τJ
τJ
τ1
τ1
τ2
τ2
R1
R1R2
R2
τ
τC
Ci i/Ri
Ci= τi/Ri
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max)
is exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
AUIRFB3207
www.irf.com 7
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage Vs. Temperature
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS(th) Gate threshold Voltage (V)
ID = 1.0A
ID = 1.0mA
ID = 250µA
Fig. 19 - Typical Stored Charge vs. dif/dtFig. 18 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
0
100
200
300
400
QRR - (nC)
IF = 30A
VR = 64V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
2
4
6
8
10
12
14
16
IRRM - (A)
IF = 30A
VR = 64V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
0
100
200
300
400
QRR - (nC)
IF = 45A
VR = 64V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / µs)
2
4
6
8
10
12
14
16
IRRM - (A)
IF = 45A
VR = 64V
TJ = 125°C
TJ = 25°C
AUIRFB3207
8www.irf.com
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
VGS
VDS
90%
10%
td(on) td(off)
trtf
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
VDD
VDS
LD
D.U.T
+
-
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
1K
VCC
DUT
0
L
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Inductor Current
AUIRFB3207
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TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUIRFB3207
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
AUIRFB3207
10 www.irf.com
Ordering Information
Base
p
art Packa
g
e T
yp
e Standard Pac
k
Com
p
lete Part Number
Form Quantit
y
AUIRFB3207 TO-220 Tube 50 AUIRFB3207
AUIRFB3207
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Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any
product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific
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of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty.
Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by
government requirements, testing of all parameters of each product is not necessarily performed.
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