PD - 96322 AUTOMOTIVE GRADE AUIRFB3207 HEXFET(R) Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS D 75V RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) G S 3.6m 4.5m 170A 75A c Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G TO-220AB AUIRFB3207 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified. Parameter ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS IAR EAR dV/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) d Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Avalanche Current d e Units c c 170 120 75 720 300 2.0 20 910 See Fig. 14, 15, 16a, 16b, Repetitive Avalanche Energy f 5.8 -55 to + 175 Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw W W/C V mJ A mJ V/ns C 300 x A x 10lb in (1.1N m) Thermal Resistance Parameter RJC RCS RJA j Junction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220 Typ. Max. Units --- 0.50 --- 0.50 --- 62 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 07/21/10 AUIRFB3207 Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs RG IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Gate Input Resistance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 75 --- --- 2.0 150 --- --- --- --- --- --- --- 0.069 --- 3.6 4.5 --- 4.0 --- --- 1.2 --- --- 20 --- 250 --- 200 --- -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A V VDS = VGS, ID = 250A S VDS = 50V, ID = 75A f = 1MHz, open drain VDS = 75V, VGS = 0V A VDS = 75V, VGS = 0V, TJ = 125C VGS = 20V nA VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) h --- --- --- --- --- --- --- --- --- --- --- --- i 180 48 68 29 120 68 74 7600 710 390 920 1010 260 --- --- --- --- --- --- --- --- --- --- --- d g nC ns Conditions ID = 75A VDS = 60V VGS = 10V VDD = 48V ID = 75A RG = 2.6 VGS = 10V VGS = 0V VDS = 50V = 1.0MHz VGS = 0V, VDS = 0V to 60V , See Fig.11 VGS = 0V, VDS = 0V to 60V , See Fig. 5 g g pF Diode Characteristics Parameter IS Continuous Source Current VSD trr (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ISM di Min. Typ. Max. Units --- --- --- 170 --- c 720 Conditions MOSFET symbol A showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V TJ = 25C VR = 64V, TJ = 125C IF = 75A di/dt = 100A/s TJ = 25C S g --- --- 1.3 V --- 42 63 ns --- 49 74 --- 65 98 nC TJ = 125C --- 92 140 --- 2.6 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) g Notes: Calculated continuous current based on maximum allowable junction Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . temperature. Package limitation current is 75A. Coss eff. (ER) is a fixed capacitance that gives the same energy as Repetitive rating; pulse width limited by max. junction temperature. Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax, starting TJ = 25C, L = 0.33mH R is measured at TJ approximately 90C. RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt 500A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. 2 www.irf.com AUIRFB3207 Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-TO-220 N/A Class M4(425V) (per AEC-Q101-002) ESD Human Body Model (per AEC-Q101-001) Charged Device Model RoHS Compliant Class H2(4000V) Class C5 (1125V) (per AEC-Q101-005) Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRFB3207 1000 1000 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V 100 BOTTOM 10 4.5V BOTTOM 100 4.5V 60s PULSE WIDTH Tj = 175C 60s PULSE WIDTH Tj = 25C 1 10 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 100 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) TJ = 175C 100.0 TJ = 25C 10.0 VDS = 50V 60s PULSE WIDTH 1.0 4.0 5.0 6.0 7.0 8.0 ID = 75A VGS = 10V 2.0 1.5 1.0 0.5 9.0 -60 -40 -20 0 VGS, Gate-to-Source Voltage (V) 12000 VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd Ciss 8000 6000 4000 2000 Coss Crss ID= 75A VDS = 60V VDS= 38V 16 12 8 4 0 0 1 Fig 4. Normalized On-Resistance vs. Temperature 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 10000 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 10 Fig 2. Typical Output Characteristics 1000.0 ID, Drain-to-Source Current() 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 0 40 80 120 160 200 240 280 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com AUIRFB3207 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000.0 TJ = 175C 100.0 10.0 TJ = 25C 1.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100 100sec 10 1 VGS = 0V 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 V(BR)DSS , Drain-to-Source Breakdown Voltage 200 Limited By Package 150 100 50 0 50 75 100 125 150 100 1000 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 25 10 VDS , Drain-toSource Voltage (V) VSD, Source-to-Drain Voltage (V) ID, Drain Current (A) 10msec DC 0.1 0.1 100 90 80 70 -60 -40 -20 0 175 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) T C , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage EAS, Single Pulse Avalanche Energy (mJ) 3.0 2.5 2.0 Energy (J) 1msec Tc = 25C Tj = 175C Single Pulse 1.5 1.0 0.5 4000 I D 12A 16A BOTTOM 75A TOP 3000 2000 1000 0 0.0 20 30 40 50 60 70 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy www.irf.com 80 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 12. Maximum Avalanche Energy Vs. DrainCurrent 5 AUIRFB3207 1 Thermal Response ( ZthJC ) D = 0.50 0.1 0.20 0.10 0.05 0.01 J 0.02 0.01 R1 R1 J 1 R2 R2 C 2 1 Ri (C/W) i (sec) 0.2151 0.001175 0.2350 2 0.017994 Ci= i/Ri Ci i/Ri 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 0.01 0.05 10 0.10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 1000 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 800 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) Fig 15. Maximum Avalanche Energy vs. Temperature 6 PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRFB3207 16 ID = 1.0A ID = 1.0mA ID = 250A 4.5 4.0 14 12 IRRM - (A) VGS(th) Gate threshold Voltage (V) 5.0 3.5 3.0 10 8 2.5 6 IF = 30A VR = 64V 2.0 4 TJ = 125C TJ = 25C 1.5 2 -75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000 TJ , Temperature ( C ) dif / dt - (A / s) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage Vs. Temperature 16 400 14 300 QRR - (nC) IRRM - (A) 12 10 8 6 IF = 45A VR = 64V 4 TJ = 125C 200 IF = 30A VR = 64V 100 TJ = 125C TJ = 25C 2 TJ = 25C 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / s) dif / dt - (A / s) Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt 400 QRR - (nC) 300 200 100 IF = 45A VR = 64V TJ = 125C TJ = 25C 0 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / s) Fig. 20 - Typical Stored Charge vs. dif/dt www.irf.com 7 AUIRFB3207 D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V D.U.T RG VGS 20V DRIVER L VDS tp + V - DD IAS tp A 0.01 I AS Fig 22a. Unclamped Inductive Test Circuit LD Fig 22b. Unclamped Inductive Waveforms VDS VDS 90% + VDD - 10% D.U.T VGS VGS Pulse Width < 1s Duty Factor < 0.1% td(on) Fig 23a. Switching Time Test Circuit tr td(off) tf Fig 23b. Switching Time Waveforms Id Vds Vgs L DUT 0 VCC Vgs(th) 1K Qgs1 Qgs2 Fig 24a. Gate Charge Test Circuit 8 Qgd Qgodr Fig 24b. Gate Charge Waveform www.irf.com AUIRFB3207 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRFB3207 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRFB3207 Ordering Information Base part AUIRFB3207 10 Package Type TO-220 Standard Pack Form Tube Complete Part Number Quantity 50 AUIRFB3207 www.irf.com AUIRFB3207 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 11