IXTA 1N80 IXTP 1N80 IXTY 1N80 High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated VDSS ID25 RDS(on) = 800 V = 750 mA = 11 Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 750 mA IDM TC = 25C, pulse width limited by TJM 3 A 1.0 A IAR EAR TC = 25C 5 mJ EAS TC = 25C 100 mJ dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 47 PD TC = 25C 3 V/ns 40 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TJ Md Mounting torque Weight TO-220 TO-252 TO-263 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions 4 0.8 3 g g g 300 C TO-220AB (IXTP) D (TAB) GD S TO-263 AA (IXTA) G S D (TAB) TO-252 AA (IXTY) G S G = Gate, S = Source, D (TAB) D = Drain, TAB = Drain Features ! International standard packages ! High voltage, Low RDS (on) HDMOSTM process Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 A 800 VGS(th) VDS = VGS, ID = 25 A 2.5 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 500 mA Pulse test, t 300 s, duty cycle d 2 % V TJ = 25C TJ = 125C 9.5 4.5 V 100 nA 25 500 A A 11 ! Rugged polysilicon gate ! Fast switching times cell structure Applications ! Switch-mode and resonant-mode power supplies Flyback inverters ! ! DC choppers ! High frequency matching Advantages ! Space savings ! High power density DS98822C(11/03) (c) 2003 IXYS All rights reserved http://store.iiic.cc/ IXTP 1N80 IXTA 1N80 IXTY 1N80 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 500 mA, pulse test 0.7 Ciss Coss 0.8 S 220 pF 23 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 4 pF td(on) 11 ns tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 1A 19 ns td(off) RG 40 ns tf 28 ns QG(on) 8.5 nC 2.5 nC 4.5 nC QGS = 47, (External) VGS = 10 V, VDS = 0.5 * VDSS, ID = 1A QGD RthJC RthCK 3.1 (IXTP) 0.50 Source-Drain Diode TO-220 AD Dimensions Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side K/W K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % t rr IF = IS, -di/dt = 100 A/s, VR = 100 V 750 mA 3 A 2 V 1.8 710 TO-263 AA Outline ns TO-252 AA Outline Dim. A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3 Millimeter Min. Max. Inches Min. Max. 2.19 2.38 0.89 1.14 0 0.13 0.64 0.89 0.76 1.14 5.21 5.46 0.46 0.58 0.46 0.58 5.97 6.22 4.32 5.21 6.35 6.73 4.32 5.21 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 1.02 0.89 1.27 2.54 2.92 0.086 0.094 0.035 0.045 0 0.005 0.025 0.035 0.030 0.045 0.205 0.215 0.018 0.023 0.018 0.023 0.235 0.245 0.170 0.205 0.250 0.265 0.170 0.205 0.090 BSC 0.180 BSC 0.370 0.410 0.020 0.040 0.025 0.040 0.035 0.050 0.100 0.115 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 http://store.iiic.cc/ 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1