Advance Technical Information IXTK 75N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 75 A = 42 m RDS(on) N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C; RGS = 1.0 M 300 V VGS Continuous 20 V VGSM Transient 30 V ID25 IDM IAR TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 75 300 75 A A A EAR EAS TC = 25C TC = 25C 60 2.5 mJ J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 5 V/ns PD TC 540 W TJ -55 ... +150 C TJM Tstg 150 -55 ... +150 C C 300 C = 25C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.7/6 Nm/lb.in. 10 g TO-264 AA (IXTK) D (TAB) G D S G = Gate S = Source D = Drain Tab = Drain Features *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *International standard package *Fast switching times Applications Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 1 mA VGS(th) V DS = VGS, ID = 250 A IGSS V GS = 20 V DC, VDS = 0 IDSS V DS = VDSS V GS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2% (c) 2003 IXYS All rights reserved 300 2.0 TJ = 25C TJ = 125C V 4.0 V 100 nA 50 A 2 mA * Motor controls * DC choppers * Switched-mode power supplies Advantages * Easy to mount with one screw (isolated mounting screw hole) * Space savings * High power density 42 m DS99012(03/03) IXTK 75N30 Symbol Test Conditions (T J = 25C unless otherwise specified) gfs Characteristic values Min. Typ. Max. VDS = 10 V; ID = 0.5 ID25, pulse test Ciss 60 S 6000 pF 1010 pF C rss 400 pF td(on) 24 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 45 tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 ns td(off) RG = 1.5 (External) 88 ns 20 ns tf 240 QG(on) QGS VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 QGD nC 42 nC 110 nC 0.23 K/W RthJC RthCK 0.15 Source-Drain Diode K/W TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 Ratings and Characteristics (TJ = 25C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % t rr IF = 25A, -di/dt = 100 A/s, VR = 100V Qrr 75 A 300 A 1.5 V 360 ns 4 C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTK 75N30 Fig. 2. Extended Output Characteristics @ 25 deg. C Fig. 1. Output Characteristics @ 25 Deg. C 80 180 VGS = 10V 9V 8V 7V ID - Amperes 60 VGS = 10V 9V 8V 150 50 ID - Amperes 70 6V 40 30 7V 120 90 60 6V 30 5V 20 10 5V 0 0 0 0.5 1 1.5 2 2.5 V DS - Volts 3 3.5 0 10 12 Junction Temperature VGS = 10V 9V 8V 7V 6V RDS(on) - Normalized ID - Amperes 8 3 5V 30 20 VGS = 10V 2.5 2 ID = 75A 1.5 ID = 37.5A 1 10 0 0.5 0 1 2 3 4 5 -50 6 -25 V DS - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to I D25 Fig. 6. Drain Current vs. Case Temperature Value vs. I D 80 3 70 VGS = 10V 2.6 T J = 125C 60 2.2 ID - Amperes RDS(on) - Normalized 6 Fig. 4. RDS(on) Normalized to ID25 Value vs. 60 40 4 V DS - Volts Fig. 3. Output Characteristics @ 125 Deg. C 50 2 1.8 1.4 50 40 30 20 1 T J = 25C 10 0 0.6 0 30 60 90 120 ID - Amperes (c) 2003 IXYS All rights reserved 150 180 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTK 75N30 Fig. 8. Transconductance 140 120 120 100 100 Gfs - Siemens ID - Amperes Fig. 7. Input Admittance 80 T J = -40C 25C 125C 60 40 T J = -40C 25C 125C 80 60 40 20 20 0 0 3.5 4 4.5 5 5.5 6 6.5 0 7 30 60 V GS - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 120 150 180 200 240 Fig. 10. Gate Charge 200 10 VDS = 150V ID =37.5A IG = 10mA 175 8 150 125 VGS - Volts IS - Amperes 90 ID - Amperes 100 75 T J = 125C T J = 25C 50 6 4 2 25 0 0 0.4 0.6 0.8 1 1.2 0 1.4 V SD - Volts 80 120 160 QG - nanoCoulombs Fig. 11. Capacitance 10000 1 Fig. 12. Maximum Transient Thermal Resistance C iss R(th)JC - (C/W) Capacitance - pF 40 f = 1M Hz 1000 C oss 0.1 C rss 100 0.01 0 5 10 15 20 25 V DS - Volts 30 35 40 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343