BC807, BC808
1 Nov-29-2001
PNP Silicon AF Transistors
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Comlementary types: BC817, BC818 (NPN)
1
2
3
VPS05161
Type Marking Pin Configuration Package
BC807-16
BC807-25
BC807-40
BC808-16
BC808-25
BC808-40
5As
5Bs
5Cs
5Es
5Fs
5Gs
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
Maximum Ratings
Parameter Symbol BC807 BC808 Unit
Collector-emitter voltage VCEO 45 25 V
Collector-base voltage VCBO 50 30
Emitter-base voltage VEBO 5 5 mADC collector current 500
IC
Peak collector current 1 A
ICM
Base current mA100
IB
Peak base current 200
IBM
Total power dissipation, TS = 79 °C Ptot mW330
Junction temperature 150 °C
Tj
Tst
g
Storage temperature -65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
215 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BC807, BC808
2 Nov-29-2001
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BC807
BC808
V(BR)CEO
45
25
-
-
-
-
V
Collector-base breakdown voltage
IC = 10 µA, IE = 0
BC807
BC808
V(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 25 V, IE = 0 ICBO - - 100 nA
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C ICBO - - 50 µA
Emitter cutoff current
VEB = 4 V, IC = 0 IEBO - - 100 nA
DC current gain 1)
IC = 100 mA, VCE = 1 V
hFE-grp. 16
hFE-grp. 25
hFE-grp. 40
hFE
100
160
250
160
250
350
250
400
630
-
DC current gain 1)
IC = 500 mA, VCE = 1 V hFE 40 - -
Collector-emitter saturation voltage1
)
IC = 500 mA, IB = 50 mA VCEsat - - 0.7 V
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA VBEsat - - 1.2
1) Pulse test: t ≤ 300µs, D = 2%
BC807, BC808
3 Nov-29-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
fT
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz - -200 MHz
Ccb - 10 pFCollector-base capacitance
VCB = 10 V, f = 1 MHz -
Ceb
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz - 60 -
BC807, BC808
4 Nov-29-2001
Transition frequency fT = f (IC)
VCE = 5V
10
EHP00210
03
10mA
1
10
3
10
5
5
10
1
10
2
10
2
C
T
fMHz
Ι
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
30
60
90
120
150
180
210
240
270
300
mW
360
Ptot
Permissible pulse load
Ptotmax / PtotDC = f (tp)
10
EHP00212
-6
0
10
5
D
=
5
10
1
10
2
3
10
10
-5
10
-4
10
-3
10
-2
10
0
s
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
totmax
tot
P
DC
P
p
t
t
p
=
DT
t
p
T
Collector cutoff current ICBO = f(TA)
VCBO = 25V
0
10
EHP00213
A
T
150
0
5
10
Ι
CBO
nA
50 100
1
10
2
10
4
10
˚C
typ
max
10
3
BC807, BC808
5 Nov-29-2001
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0
10
EHP00215
CEsat
V
0.4 V 0.8
-1
10
0
10
1
3
10
5
5
Ι
C
mA
5
2
10
0.2 0.6
-50
25
150
˚C
˚C
˚C
Base-emitter saturation voltage
IC = f(VBEsat), hFE = 10
0
10
EHP00214
BEsat
V
2.0 V 4.0
-1
100
101
3
10
5
5
Ι
CmA
5
2
10
1.0 3.0
˚C
-50
25
˚C
˚C
150
DC current gain hFE = f(IC)
VCE = 1V
10
EHP00216
-1 3
10mA
0
10
3
10
5
5
100101
101
C
FE
h
Ι
2
10
2
10
˚C
100
5
25
˚C
-50
˚C
