Parameter
Symbol
Value
Unit
Reverse Voltage
V
R
T
J
75
V
Forward Current
I
O
150
mA
Forward
Po
wer Dissipation
P
D
200
mW
Junction Temperature
150
℃
Storage Temperature
T
STG
-
5
5~
+
150
℃
P
a
r
a
m
e
t
e
r
Symbol
T
est conditions
Min
Max Unit
Reverse Breakdow
n
Voltage
V
(BR)
I
R
= 100µA
75
V
Revers
e
Voltage Leakage Current
I
R
V
R
=75V
V
R
=20V
2.5
25
µA
nA
Forward
V
oltage
V
F
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
715
855
1000
1250
mV
Diode
Cap
acitance
C
D
V
R
=0V f=1MHz
2
pF
Reveres Recovery
Tim
e
t
rr
I
F
=I
R
=10mA
I
rr
=0.1×I
R
R
L
=100
Ω
4
n
s
1
2
3
BAV99W
Fast
Switching Diode
Fast switching speed
Features
■
■
■
SOT-323 package
RoHS compliant
■
Applications
High-s
peed switching in
surface mounted circuits
High Conductance
■
Schematic Diagram
SOT
-323
Maximum Ratings
(T
A
=25
°C
u
nless otherwise specified)
Electrical Characteristics
(T
A
=25
°C u
nless otherwise specified)
1/4
3
2
1
T
ypical Characteristic Curves
BAV99W
Fast
Switching Diode
2/4
Product Dimensi
ons
Min.
Ma
x
.
Min.
Ma
x
.
A
0.
900
1.1
5
0
0.
035
0.04
5
A
1
0.000
0.
10
0
0.
00
0
0.
004
A
2
0.900
1.
00
0
0.
03
5
0.
039
b
0.
200
0.
400
0.
008
0.
016
c
0.
080
0.
150
0.
003
0.
006
D
1
.
95
0
2.
35
0
0.07
7
0.0
93
E
1.
150
1.
350
0.
045
0.
053
E
1
2.
00
0
2.
45
0
0.0
78
0.
09
6
e
e1
1.
200
1.
400
0.
047
0.
055
L
L1
0.
260
0.
460
0.
010
0.
018
θ
0°
8°
0°
8°
0.
525 R
EF.
0.
021 R
EF.
Symbol
D
im
en
s
io
n
s
In
Millime
t
e
rs
D
im
e
n
s
io
n
s
In
In
c
h
e
s
0.
650 T
Y
P.
0.
026 T
Y
P.
BAV99W
Fast
Switching Diode
3/4
BAV99W
Fast
Switching Diode
Order Information
RoHS compliant
3000pcs/Reel
Tape & Reel
KJG
SOT-323
BAV99W
Device
Package
Marking
Carrier
Quantity
HSF Status
4/4
Doc.USBAV99Wx
YS
4
.0
www.goodarksemi.com
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