IRFP460 Data Sheet January 2002 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features * 20A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17465. Ordering Information PART NUMBER IRFP460 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol PACKAGE TO-247 * rDS(ON) = 0.270 BRAND D IRFP460 NOTE: When ordering, use the entire part number. G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (TAB) (c)2002 Fairchild Semiconductor Corporation IRFP460 Rev. B IRFP460 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFP460 500 500 20 12 80 20 250 2.0 960 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to TJ = 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 500 - - V VGS = VDS, ID = 250A 2 - 4 V VDS = Rated BVDSS , VGS = 0V - - 25 A - - 250 A 20 - - A Drain to Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V (Figure 10) Gate Threshold Voltage VGS(TH) Zero Gate Voltage Drain Current IDSS VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate-Drain) Gate to Source Charge ID(ON) VDS > ID(ON) x rDS(ON)MAX , VGS = 10V VGS = 20V - - 100 nA rDS(ON) ID = 11A, VGS = 10V (Figures 8, 9) - 0.24 0.27 gfs td(ON) VDS 50V, IDS > 11A (Figure 12) 13 19 - S - 23 35 ns IGSS tr VDD = 250V, ID = 21A, RGS = 4.3 , RD = 12 , VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature td(OFF) tf Qg(TOT) Qgs Gate to Drain "Miller" Charge Qgd Input Capacitance CISS Output Capacitance Reverse Transfer Capacitance VGS = 10V, ID = 21A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA (Figure 14). Gate Charge is Essentially Independent of OperatingTemperature - 81 120 ns - 85 130 ns - 65 98 ns - 120 190 nC - 18 - nC - 62 - nC - 4100 - pF COSS - 480 - pF CRSS - 84 - pF - 5.0 - nH - 13 - nH - - 0.50 oC/W - - 30 oC/W VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) Internal Drain Inductance LD Measured from the Drain Lead, 6mm (0.25in) from Package to Center of Die Internal Source Inductance LS Measured from the Source Lead, 6mm (0.25in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances D LD G LS S Thermal Resistance Junction to Case RJC Thermal Resistance Junction to Ambient RJA (c)2002 Fairchild Semiconductor Corporation Free Air Operation IRFP460 Rev. B IRFP460 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier MIN TYP MAX UNITS - - 20 A - - 80 A - - 1.8 V 280 580 1200 ns 3.8 8.1 18 C D G S Source to Drain Diode Voltage (Note 2) VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TJ = 25oC, ISD = 21A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 21A, dISD/dt = 100A/s TJ = 25oC, ISD = 21A, dISD/dt = 100A/s NOTES: 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 4.3mH, RGS = 25, Peak IAS = 20A. Typical Performance Curves Unless Otherwise Specified 20 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0 16 12 8 4 0 0 50 100 150 TC , CASE TEMPERATURE (oC) 25 75 50 125 100 150 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZJC, THERMAL IMPEDANCE (oC/W) 1 0.5 0.1 0.2 0.1 0.05 PDM 0.02 10-2 0.01 t1 t2 SINGLE PULSE 10-3 10-5 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (S) 1 10 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE (c)2002 Fairchild Semiconductor Corporation IRFP460 Rev. B IRFP460 Typical Performance Curves 40 2 32 102 5 10s 100s 2 10 1ms 5 10ms 2 1 5 T = 25oC C TJ = MAX RATED 2 SINGLE PULSE 0.1 1 2 5 10 VGS = 5.5V 24 16 VGS = 5.0V 8 VGS = 4.5V DC VGS = 4.0V 2 102 5 2 5 0 103 0 50 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA ID, DRAIN CURRENT(A) ID , DRAIN CURRENT (A) VGS = 5.5V 24 16 VGS = 5.0V 8 VGS = 4.5V VGS = 4.0V 16 12 10 TJ = 150oC 1 TJ = 25oC 0.1 10-2 0 20 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS 3.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 2.0 VGS = 10V 1.5 1.0 0.5 0 VGS = 20V 2.4 20 40 60 ID, DRAIN CURRENT (A) 80 100 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT (c)2002 Fairchild Semiconductor Corporation PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 11A 1.8 1.2 0.6 0 0 10 FIGURE 7. TRANSFER CHARACTERISTICS NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE () 2.5 250 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V VGS = 6.0V VGS = 10V 8 200 102 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 4 150 FIGURE 5. OUTPUT CHARACTERISTICS 40 0 100 VDS , DRAIN TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) 32 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 6.0V OPERATION IN THIS AREA IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 103 5 Unless Otherwise Specified (Continued) -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE IRFP460 Rev. B IRFP460 Typical Performance Curves Unless Otherwise Specified (Continued) 10000 1.25 1.15 1.05 0.95 CISS 6000 COSS 4000 0.85 0.75 0 40 80 120 0 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE TJ = 25oC 24 16 TJ = 150oC 8 0 8 5 10 2 5 VDS , DRAIN TO SOURCE VOLTAGE (V) 102 PULSE DURATION = 80s 5 DUTY CYCLE = 0.5% MAX 2 10 16 24 ID , DRAIN CURRENT (A) 32 VGS, GATE TO SOURCE (V) TJ = 25oC 2 1 5 2 40 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 20 TJ = 150oC 5 0.1 0 2 102 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDS 50V 32 1 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE ISD, SOURCE TO DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) 40 CRSS 2000 -40 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 8000 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE ID = 21A VDS = 400V VDS = 250V VDS = 100V 16 12 8 4 0 0 40 80 120 160 200 Qg, GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE (c)2002 Fairchild Semiconductor Corporation IRFP460 Rev. B IRFP460 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS - VGS VDS IAS VDD VDD DUT tP 0V IAS 0 0.01 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% + RG - VDD 10% 0 10% DUT 90% VGS VGS 0 50% PULSE WIDTH 10% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 50% VDD Qg(TOT) 12V BATTERY 0.2F SAME TYPE AS DUT 50k Qgd Qgs 0.3F D IG(REF) VDS DUT G 0 S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT (c)2002 Fairchild Semiconductor Corporation VGS IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRFP460 Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4