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©2006 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
tm
November 200 6
MJD112
NPN Silicon Darlington Transistor
Features
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
Absolute Maximum Ratings* Ta = 25°C unless ot herwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise note d
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
IC Collector Curren t (DC ) 2 A
ICP Collector Curren t (Pu lse ) 4 A
IB Base Current 50 mA
PC Collector Dissipation (TC=25°C) 20 W
Collector Dissipation (Ta=25°C) 1.75 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V
ICEO Collector Cut-off Curren t VCE = 50V, IB = 0 20 µA
ICBO Collector Cut-off Curren t VCB = 100V, IB = 0 20 µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE * DC Current Gain VCE = 3V, IC = 0.5A
VCE = 3V, IC = 2A
VCE = 3V, IC = 4A
500
1000
200 12K
VCE(sat) * Collector-Emitter Saturation Voltage IC = 2A, IB = 8mA
IC = 4A, IB = 40mA 2
3 V
V
VBE(sat) * Base-Emitter Saturation V oltage IC = 4A, IB = 40mA 4 V
VBE(on) * Base-Emitter On Voltage VCE = 3A, IC = 2A 2.8 V
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.75A 25 MHz
Cob Output Capacitance VCB = 10V, IE = 0
f = 0.1MHz 100 pF
1.Base 2.Collector 3.Emitter
D-PAK
1
R1 10kΩ≅
R2 0.6kΩ≅
Equivalent Circuit
B
E
C
R1 R2
2www.fairchildsemi.com
MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 3. Collector Output Capacitance Figure 4. Turn On Time
Figure 5. Turn Off Time Figure 6. Safe Operatin g Area
0.01 0.1 1 10
10
100
1000
10000
VCE = 3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
IC = 250 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10 100
1
10
100
1000
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.01 0.1 1 10
0.1
1
10
VCC=30V
IC=250IB
tD
tR
tR,tD(µs), TURN ON TIME
IC[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.1
1
10
VCC=30V
IC=250IB
tF
tSTG
tSTG,tF[µS], TURN OFF TIME
IC[A], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
5ms
100µs
1ms
DC
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
3www.fairchildsemi.com
MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
Typical Characteristics (Continued)
Figure 1. Power Derating
0 25 50 75 100 125 150 175
0
5
10
15
20
25
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
4www.fairchildsemi.com
MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
Mechanical Dimensions
Dimensions in Millimeters
6.60
±0.20
2.30
±0.1
0
0.50
±0.1
0
5.34
±0.30
0.70
±0.20
0.60
±0.20
0.80
±0.20
9.50
±0.30
6.10
±0.20
2.70
±0.20
9.50
±0.30
6.10
±0.20
2.70
±0.20
MIN0.55
0.76
±0.10
0.50
±0.1
0
1.02
±0.2
0
2.30
±0.2
0
6.60
±0.20
0.76
±0.10
(5.34)
(1.50)
(2XR0.25)
(5.04)
0.89
±0.10
(0.10) (3.05)
(1.00)
(0.90)
(0.70)
0.91
±0.10
2.30TYP
[2.30±0.20]
2.30TYP
[2.30±0.20]
MAX0.96
(4.34)(0.50) (0.50)
D-PAK
FAIRCHILD SEMICONDUCTOR TRADEMARKS
The following are regis tered and unr egister ed tradema rks Fairchild Semiconduc tor owns or is authorized to use an d is not int ended to
be an exhaustive list of all such trademarks.
MJD112 NPN Silicon Darlington Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXP AND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-
CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions fo r use provided in the labeling, can be reaso nably expecte d
to result in significant injury to the user.
2. A critical component is any component of a life support device or system
whose failure to perform can be reasonably expected to caus e the failure
of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contai ns the design specificatio ns for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains prelim inary data, and
supplementary data will be published at a later dat e.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identifica tion Needed Full Production This datasheet contains f inal specifications. Fa irchild
Semiconductor reserves the right to make changes at
any time withou t notice in order to improv e design.
Obsolete Not In Production This datasheet contains specifications on a pro duct
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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Rev. I21
5www.fairchildsemi.com
MJD112 Rev. B
MJD112 NPN Silicon Darlington Transistor
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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