AP4543GEH-HF - Advanced Power Electronics Corp. USA

P4543GEH-HF

Advanced Power N AND P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

▼ Simple Drive Requirement N-CH BVDSS 40V

▼ Good Thermal Performance RDS(ON) 24mΩ

▼ Fast Switching Performance ID8.7A

▼ RoHS Compliant & Halogen-Free P-CH BVDSS -40V

RDS(ON) 40mΩ

Description ID-7A

Absolute Maximum Ratings

Symbol Parameter Rating Units

N-channel P-channel

VDS Drain-Source Voltage 40 -40 V

VGS Gate-Source Voltage +20 +20 V

ID@TA=25℃Continuous Drain Current3 8.7 -7.0 A

ID@TA=70℃Continuous Drain Current3 7.0 -5.6 A

IDM Pulsed Drain Current1 30 -30 A

PD@TA=25℃Total Power Dissipation W

TSTG Storage Temperature Range -55 to 150 ℃

TJOperating Junction Temperature Range -55 to 150 ℃

Symbol Value Unit

Rthj-c Maximum Thermal Resistance, Junction-case 6 ℃/W

Rthj-a Maximum Thermal Resistance, Junction-ambient340 ℃/W

Data and specifications subject to change without notice

200909042

Parameter

Thermal Data

3.13

Halogen-Free Product

dvanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

TO-252-4L

G1S2G2

D1/D2

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V

RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=7A - - 24 mΩ

VGS=4.5V, ID=5A - - 36 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V

gfs Forward Transconductance VDS=10V, ID=7A - 14 - S

IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 10 uA

IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA

QgTotal Gate Charge2ID=7A - 8 13 nC

Qgs Gate-Source Charge VDS=32V - 1.7 - nC

Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.4 - nC

td(on) Turn-on Delay Time2VDS=20V - 6 - ns

trRise Time ID=7A - 16 - ns

td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 17 - ns

tfFall Time RD=2.86Ω-4-

Ciss Input Capacitance VGS=0V - 600 960 pF

Coss Output Capacitance VDS=25V - 110 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF

RgGate Resistance f=1.0MHz - 2.1 - Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2IS=2.6A, VGS=0V - - 1.2 V

trr Reverse Recovery Time2IS=7A, VGS=0V - 19 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC

AP4543GEH-HF

N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)

AP4543GEH-HF

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V

RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-5A - - 40 mΩ

VGS=-4.5V, ID=-3A - - 65 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V

gfs Forward Transconductance VDS=-10V, ID=-5A - 10 - S

IDSS Drain-Source Leakage Current VDS=-40V, VGS=0V - - -10 uA

IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA

QgTotal Gate Charge2ID=-5A - 13 21 nC

Qgs Gate-Source Charge VDS=-32V - 2 - nC

Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8.5 - nC

td(on) Turn-on Delay Time2VDS=-20V - 8 - ns

trRise Time ID=-5A - 15 - ns

td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 26 - ns

tfFall Time RD=4Ω-34-ns

Ciss Input Capacitance VGS=0V - 670 1070 pF

Coss Output Capacitance VDS=-25V - 160 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 135 - pF

RgGate Resistance f=1.0MHz - 6 - Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2IS=-2.6A, VGS=0V - - -1.2 V

trr Reverse Recovery Time2IS=-5A, VGS=0V - 28 - ns

Qrr Reverse Recovery Charge dI/dt=-100A/µs - 23 - nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test.

3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

AP4543GEH-HF

N-Channel

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

012345

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TA=25oC10V

7.0V

6.0V

5.0V

VG=4.0 V

0 0.2 0.4 0.6 0.8 1 1.2 1.4

VSD , Source-to-Drain Voltage (V)

IS(A)

Tj=25oCTj=150oC

0.4

0.8

1.2

1.6

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized VGS(th) (V)

012345

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TA=150 oC10V

7.0V

6.0V

5.0V

VG=4.0V

246810

VGS , Gate-to-Source Voltage (V)

RDS(ON) (m

)

ID=5A

TA=25oC

0.6

1.0

1.4

1.8

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

D=7A

VG=10V

P4543GEH-HF

N-Channel

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4.5V

QGS QGD

Charge

0 4 8 12 16

QG , Total Gate Charge (nC)

VGS , Gate to Sourc e Voltage ( V)

D=7A

VDS =32V

200

400

600

800

1000

1 5 9 1317212529

VDS , Drain-to-Source Voltage (V)

C (pF)

=1.0MH

Ciss

Coss

Crss

0.01

0.1

100

0.01 0.1 1 10 100

VDS , Drain-to-Source Voltage (V)

ID (A)

TA=25oC

Single Pulse

100us

1ms

10ms

100ms

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pulse Width (s)

Normalized Th e rmal Re sponse (Rthja)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + TA

Rthja=75℃/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

td(on) trtd(off) tf

VDS

VGS

10%

90%

Operation in this area

limited by RDS(ON)

AP4543GEH-HF

P-Channel

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

0123456

-VDS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

TA=25oC-10V

-7.0V

-6.0V

-5.0V

VG=- 4.0V

246810

-VGS ,Gate-to-Source Voltage (V)

RDS(ON) (m

)

ID= -3 A

TA=25oC

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized -VGS(th) (V)

0123456

-VDS , Drain-to-Source Voltage (V)

-ID , Drain Current (A)

TA=150 oC-10V

-7.0V

-6.0V

-5.0V

VG=- 4.0V

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

ID= -5A

VG= -10V

0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5

-VSD , Source-to-Drain Voltage (V)

-IS(A)

Tj=25oCTj=150oC

P4543GEH-HF

P-Channel

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

0 4 8 12 16 20 24

QG , Total Gate Charge (nC)

-VGS , Gate to Source Voltage (V)

D=-5A

VDS =-32 V

200

400

600

800

1000

1200

1 5 9 13 17 21 25 29

-VDS , Drain-to-Source Voltage (V)

C (pF)

=1.0MH

Ciss

Coss

Crss

0.01

0.1

100

0.01 0.1 1 10 100

-VDS , Drain-to-Source Voltage (V)

-ID (A)

TA=25oC

Single Pulse

100us

1ms

10ms

100ms

-4.5V QGS QGD

Charge

0.001

0.01

0.1

0.0001 0.001 0.01 0.1 1 10 100 1000

t , Pulse Width (s)

Normalized Th e rmal Re sponse (Rthja)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthja + TA

Rthja=75℃/W

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

td(on) trtd(off) tf

VDS

VGS

10%

90%

Operation in this

area limited by

RDS(ON)