AP4543GEH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS D1/D2 Good Thermal Performance RDS(ON) Fast Switching Performance ID RoHS Compliant & Halogen-Free 40V 24m 8.7A P-CH BVDSS S1 G1 S2 RDS(ON) G2 Description -40V 40m ID TO-252-4L Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. -7A D1 G1 D2 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Units P-channel 40 -40 V +20 +20 V Continuous Drain Current 3 8.7 -7.0 A Continuous Drain Current 3 7.0 -5.6 A 30 -30 A 1 IDM Pulsed Drain Current PD@TA=25 Total Power Dissipation TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 3.13 W Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Unit 6 /W 40 /W 1 200909042 AP4543GEH-HF o N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 40 - - V VGS=10V, ID=7A - - 24 m VGS=4.5V, ID=5A - - 36 m VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=7A - 14 - S IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA Qg Total Gate Charge ID=7A - 8 13 nC Qgs Gate-Source Charge VDS=32V - 1.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.4 - nC 2 2 td(on) Turn-on Delay Time VDS=20V - 6 - ns tr Rise Time ID=7A - 16 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 17 - ns tf Fall Time RD=2.86 - 4 - ns Ciss Input Capacitance VGS=0V - 600 960 pF Coss Output Capacitance VDS=25V - 110 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF Rg Gate Resistance f=1.0MHz - 2.1 - Min. Typ. IS=2.6A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=7A, VGS=0V - 19 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 13 - nC 2 AP4543GEH-HF P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. -40 - - V VGS=-10V, ID=-5A - - 40 m VGS=-4.5V, ID=-3A - - 65 m VGS=0V, ID=-250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5A - 10 - S IDSS Drain-Source Leakage Current VDS=-40V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA ID=-5A - 13 21 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-32V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 8.5 - nC 2 td(on) Turn-on Delay Time VDS=-20V - 8 - ns tr Rise Time ID=-5A - 15 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 26 - ns tf Fall Time RD=4 - 34 - ns Ciss Input Capacitance VGS=0V - 670 1070 pF Coss Output Capacitance VDS=-25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 135 - pF Rg Gate Resistance f=1.0MHz - 6 - Min. Typ. IS=-2.6A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-5A, VGS=0V - 28 - ns Qrr Reverse Recovery Charge dI/dt=-100A/s - 23 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test. 3.N-CH , P-CH are same , mounted on 2oz FR4 board t 10s. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4543GEH-HF N-Channel 40 40 o 30 10V 7.0V 6.0V 5.0V T A = 150 C ID , Drain Current (A) ID , Drain Current (A) o 10V 7.0V 6.0V 5.0V T A = 25 C V G = 4.0 V 20 30 V G = 4.0V 20 10 10 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.8 32 ID=5A ID=7A V G =10V T A =25 o C Normalized RDS(ON) RDS(ON) (m) 28 24 1.4 1.0 20 0.6 16 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 T j =150 o C 6 Normalized VGS(th) (V) IS(A) 8 T j =25 o C 4 1.2 0.8 0.4 2 0 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4543GEH-HF N-Channel f=1.0MHz 1000 I D =7A V DS =32V 8 800 C (pF) VGS , Gate to Source Voltage (V) 10 6 600 C iss 4 400 2 200 C oss C rss 0 0 0 4 8 12 16 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Operation in this area limited by RDS(ON) 10 ID (A) 100us 1ms 10ms 1 100ms 1s 0.1 T A =25 o C Single Pulse DC 0.01 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t Single Pulse 0.01 T Duty factor = t/T Peak Tj = PDM x Rthja + T A Rthja=75/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area VDS 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG 90% QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 5 AP4543GEH-HF P-Channel 40 40 -ID , Drain Current (A) -ID , Drain Current (A) 30 V G = - 4.0V 20 10 30 V G = - 4.0V 20 10 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1.8 I D = -3 A o T A =25 C Normalized RDS(ON) 1.6 50 RDS(ON) (m) -10V -7.0V -6.0V -5.0V T A = 150 o C -10V -7.0V -6.0V -5.0V o T A = 25 C 40 I D = -5A V G = -10V 1.4 1.2 1.0 30 0.8 0.6 20 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS ,Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 1.6 1.4 Normalized -VGS(th) (V) -IS(A) 8 6 T j =150 o C T j =25 o C 4 1.2 1.0 0.8 2 0.6 0 0.4 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4543GEH-HF P-Channel f=1.0MHz 1200 1000 8 I D = -5 A V DS = -32 V 800 C (pF) -VGS , Gate to Source Voltage (V) 10 6 C iss 600 4 400 2 200 C oss C rss 0 0 0 4 8 12 16 20 1 24 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 -ID (A) 10 100us 1ms 1 10ms 100ms 1s 0.1 o T A =25 C Single Pulse DC 0.01 Normalized Thermal Response (Rthja) Duty factor=0.5 Operation in this area limited by RDS(ON) 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + T A Rthja=75/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 7