MITSUBISHI TRANSISTOR MODULES QM150DY-HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-HK * * * * * IC Collector current ........................ 150A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 E2 B2 9 B1X B1 E1 30 C1 C2E1 800.25 9.5 (12) (12) (12) 20.5 Tab#110, t=0.5 B2X 28 20.5 8 LABEL B2 E2 29 +1.5 - 0.5 3-M5 90.1 61 B2X E2 480.25 17.5 1.3 23 6 12 6 12 23 18.8 4-5.5 C2E1 B1X E2 C1 E1 B1 Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150DY-HK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 600 V VCEX Collector-emitter voltage VEB=2V 600 V VCBO Collector-base voltage Emitter open 600 V VEBO Emitter-base voltage Collector open IC Collector current -IC PC Parameter Conditions 7 V DC 150 A Collector reverse current DC (forward diode current) 150 A Collector dissipation TC=25C 690 W IB Base current DC 9 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 1500 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Charged part to case, AC for 1 minute Main terminal screw M5 -- Mounting torque Mounting screw M5 -- Typical value Weight ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N*m 15~20 kg*cm 1.47~1.96 N*m 15~20 kg*cm 420 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=600V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=600V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 150 mA VCE (sat) Collector-emitter saturation voltage -- -- 2.0 V VBE (sat) Base-emitter saturation voltage -- -- 2.5 V -VCEO Collector-emitter reverse voltage -IC=150A (diode forward voltage ) -- -- 1.85 V hFE DC current gain IC=150A, VCE=2V/5V 75/100 -- -- -- -- -- 2.5 s Switching time VCC=300V, IC=150A, IB1=-IB2=3A -- -- 12 s -- -- 3.0 s Transistor part (per 1/2 module) -- -- 0.18 C/ W Diode part (per 1/2 module) -- -- 0.6 C/ W Conductive grease applied (per 1/2 module) -- -- 0.1 C/ W IC=150A, IB=2A ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150DY-HK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 300 IB=3.0A DC CURRENT GAIN hFE 240 IB=2.0A IB=1.0A IB=0.5A 120 60 0 IB=0.1A 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 5 BASE CURRENT IB (A) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 VCE=2.0V Tj=25C 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2 2.6 BASE-EMITTER VOLTAGE 10 3 7 5 3 2 3.0 COLLECTOR CURRENT IC (A) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 VBE(sat) 10 0 7 5 4 3 2 10 -1 VCE(sat) IB=2A Tj=25C Tj=125C 2 3 4 5 7 10 1 IC=200A 1 IC=50A IC=100A IC=150A 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 2 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) 5 3 Tj=25C Tj=125C 7 5 3 2 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 4 VCE=2.0V 10 1 VBE (V) Tj=25C Tj=125C VCE=5.0V 10 2 7 5 3 2 VCE (V) VCE (sat), VBE (sat) (V) 180 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) Tj=25C 0 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE CURRENT IB (A) 10 2 7 5 3 2 10 1 7 5 3 2 ts VCC=300V IB1=-IB2=3A Tj=25C Tj=125C 10 0 ton 7 tf 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150DY-HK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 2 400 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) Tj=125C 10 1 7 5 4 3 2 ts VCC=300V IC=150A IB1=3A 10 0 7 5 4 3 2 10 -1 tf Tj=25C Tj=125C 2 3 4 5 7 10 0 300 IB2=-2A 200 100 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) 600 800 COLLECTOR-EMITTER VOLTAGE VCE (V) S 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE 0.16 Zth (j-c) (C/ W) SECOND BREAKDOWN AREA 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 0.20 0.12 0.08 0.04 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 400 90 DERATING FACTOR (%) S 200 100 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) m 10 10 2 7 5 3 2 50 0 1m S 0 DERATING FACTOR OF F. B. S. O. A. tw=50S 100S DC COLLECTOR CURRENT IC (A) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 IB2=-5A TIME (s) TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 10 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM150DY-HK HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 1600 1400 Irr (A), Qrr (c) 1200 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 10 3 7 VCC=300V 5 IB1=-IB2=3A 3 Tj=25C 2 Tj=125C 10 2 7 5 3 2 Qrr Irr 10 1 7 5 3 trr 2 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 2 10 1 trr (s) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 10 -1 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0 Zth (j-c) (C/ W) 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/