PD - 96237 IRFB3004GPbF HEXFET(R) Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free S VDSS RDS(on) typ. max. ID (Silicon Limited) 40V 1.4m 1.75m 340A ID (Package Limited) 195A c D G D S TO-220AB IRFB3004GPbF G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS Parameter Max. c c Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 340 240 195 1310 380 2.5 20 4.4 -55 to + 175 d Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw f dv/dt TJ TSTG Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy d Thermal Resistance Symbol RJC RCS RJA www.irf.com e d Parameter jk Junction-to-Case Case-to-Sink, Flat Greased Surface, TO-220 Junction-to-Ambient, TO-220 Units A W W/C V V/ns C 300 10lbf in (1.1N m) x x 300 See Fig. 14, 15, 22a, 22b mJ A mJ Typ. Max. Units --- 0.50 --- 0.40 --- 62 C/W 1 06/29/09 IRFB3004GPbF Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG Min. Typ. Max. Units 40 --- --- 2.0 --- --- --- --- --- --- --- 0.037 --- 1.4 1.75 --- 4.0 --- 20 --- 250 --- 100 --- -100 2.2 --- Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mA m VGS = 10V, ID = 195A V VDS = VGS, ID = 250A A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V d g Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Min. Typ. Max. Units Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) h i 1170 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 160 40 68 92 23 220 90 130 9200 2020 1340 2440 2690 --- 240 --- --- --- --- --- --- --- --- --- --- --- --- S nC Conditions VDS = 10V, ID = 195A ID = 187A VDS =20V VGS = 10V ID = 187A, VDS =0V, VGS = 10V VDD = 26V ID = 195A RG = 2.7 VGS = 10V VGS = 0V VDS = 25V = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 32V , See Fig. 11 VGS = 0V, VDS = 0V to 32V g ns pF g i h Diode Characteristics Symbol IS Parameter Continuous Source Current VSD trr (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ISM d Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.016mH RG = 25, IAS = 195A, VGS =10V. Part not recommended for use above this value . 2 Min. Typ. Max. Units Conditions c A MOSFET symbol 1310 A showing the integral reverse --- --- 340 --- --- D G p-n junction diode. TJ = 25C, IS = 195A, VGS = 0V TJ = 25C VR = 34V, IF = 195A TJ = 125C di/dt = 100A/s TJ = 25C g S --- --- 1.3 V --- 27 --- ns --- 31 --- --- 18 --- nC TJ = 125C --- 41 --- --- 1.2 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) g ISD 195A, di/dt 930A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90C. RJC value shown is at time zero www.irf.com IRFB3004GPbF 10000 10000 1000 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 4.8V 4.5V 1000 4.5V 100 BOTTOM 4.5V 100 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 10 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics 1000 100 T J = 175C T J = 25C 10 1 VDS = 25V 60s PULSE WIDTH 0.1 ID = 195A VGS = 10V 1.5 1.0 0.5 1 2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 187A C oss = C ds + C gd C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) Ciss 10000 Coss Crss 1000 100 12.0 VDS= 32V VDS= 20V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage www.irf.com 0 50 100 150 200 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 IRFB3004GPbF 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175C 100 T J = 25C 10 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 1msec 100 10msec DC 10 Tc = 25C Tj = 175C Single Pulse VGS = 0V 1 0.1 0.0 0.5 1.0 1.5 1 2.0 350 ID, Drain Current (A) Limited By Package 250 200 150 100 50 0 50 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 25 50 Id = 5mA 48 46 44 42 40 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C ) T C , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature 2.0 EAS , Single Pulse Avalanche Energy (mJ) ID TOP 30A 54A BOTTOM 195A 1200 1.6 1000 1.4 1.2 Energy (J) Fig 10. Drain-to-Source Breakdown Voltage 1400 1.8 1.0 0.8 0.6 0.4 0.2 0.0 800 600 400 200 0 -5 0 5 10 15 20 25 30 35 40 45 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 100 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) 300 10 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 12. Maximum Avalanche Energy vs. DrainCurrent www.irf.com IRFB3004GPbF Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.1 0.20 0.10 J 0.05 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 2 1 2 3 3 4 4 Ci= i/Ri Ci i/Ri 1E-005 i (sec) 0.00646 0.000005 0.10020 0.000124 0.18747 0.001374 0.10667 0.008465 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Ri (C/W) R4 R4 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 0.01 100 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 320 280 EAR , Avalanche Energy (mJ) Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 195A 240 200 160 120 80 40 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 4.5 10 4.0 9 3.5 8 3.0 2.5 ID = 250A ID = 1.0mA 2.0 IF = 78A V R = 34V TJ = 25C TJ = 125C 7 IRRM (A) VGS(th) , Gate threshold Voltage (V) IRFB3004GPbF 6 5 ID = 1.0A 4 1.5 3 1.0 -75 -50 -25 0 2 25 50 75 100 125 150 175 200 100 200 TJ , Temperature ( C ) IF = 117A V R = 34V 300 IF = 78A V R = 34V TJ = 25C TJ = 125C 250 TJ = 25C TJ = 125C 7 QRR (nC) IRRM (A) 8 500 350 11 9 400 Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage vs. Temperature 10 300 diF /dt (A/s) 6 5 200 150 4 3 100 2 50 1 100 200 300 400 100 500 200 300 400 500 diF /dt (A/s) diF /dt (A/s) Fig. 19 - Typical Stored Charge vs. dif/dt Fig. 18 - Typical Recovery Current vs. dif/dt 400 350 QRR (nC) 300 250 IF = 117A V R = 34V TJ = 25C TJ = 125C 200 150 100 50 0 100 200 300 400 500 diF /dt (A/s) 6 Fig. 20 - Typical Stored Charge vs. dif/dt www.irf.com IRFB3004GPbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG VGS 20V + V - DD IAS A 0.01 tp I AS Fig 22a. Unclamped Inductive Test Circuit RD VDS Fig 22b. Unclamped Inductive Waveforms VDS 90% VGS D.U.T. RG + - VDD V10V GS 10% VGS Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 23a. Switching Time Test Circuit tr t d(off) Fig 23b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50K 12V tf .2F .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 24a. Gate Charge Test Circuit www.irf.com Qgs1 Qgs2 Qgd Qgodr Fig 24b. Gate Charge Waveform 7 IRFB3004GPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5)%*3%) 1RWH*VXIIL[LQSDUWQXPEHU LQGLFDWHV+DORJHQ)UHH 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( < /$67',*,72) &$/(1'$5<($5 :: :25.:((. ; )$&725<&2'( TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/2009 8 www.irf.com