Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR POWER TRANSISTOR
High Voltage, High-Speed Switching Transistor
Intended for use in Horizontal Deflection Circuits of Colour Televisions
Collector Emitter Voltage VCES
Collector Emitter Voltage VCEO
Collector Current (Peak) ICM
Base Current (DC) IB
Base Current (Peak) IBM
Reverse Base Current (DC or average
over any 20 ms period) -IB(AV)
Reverse Base Current (Peak Value) *-IBM
Power Dissipation upto Tc=25ºC Ptot
Operating and Storage Junction
Tj, Tstg
*Turn off Current
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
Collector Cut off Current **ICES VCE=VCES max, VBE=0 1.0 mA
Tj=125ºC
VCE=VCES max, VBE=0 2.0 mA
Emitter Cut off Current IEBO VEB=6V, IC=0 10 mA
Collector Emitter Sustaining Voltage *VCEO(sus) IC=100mA, IB=0, L=25mH 700 V
DC Current Gain *hFE IC=4.5A, VCE=5V 2.25
Collector Emitter Saturation Voltage *VCE(sat) IC=4.5A, IB=2A 1.0 V
Base Emitter Saturation Voltage *VBE(sat) IC=4.5A, IB=2A 1.3 V
Transition Frequency fTIC=0.1A, VCE=5V, f=5MHz 7MHz
125 pF
**Measured with half-sinewave Voltage (curve tracer)
*Pulse Test: Pulse Width=5ms, Duty Cycle
A
W
ºC
A
A
A
mA
UNIT
V
V
A
100
5
60
- 65 to +150
VALUE
1500
700
8
15
4
6
IS/ISO 9002
Continental Device India Limited Data Sheet Page 1 of 3