2N5551BU - ON SEMICONDUCTOR

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2N5551 / MMBT5551 — NPN General-Purpose Amplifier

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2N5551 / MMBT5551 Rev. 21

August 2018

2N5551 / MMBT5551

NPN General-Purpose Amplifier

Ordering Information

Part Number Top Mark Package Packing Method

2N5551TA 5551 TO-92 3L Ammo

2N5551TFR 5551 TO-92 3L Tape and Reel

2N5551TF 5551 TO -92 3L Tape and Reel

2N5551BU 5551 TO-92 3L Bulk

MMBT5551 3S SOT-23 3L Tape and Reel

1. Base 2. Emitter 3. Collector

SOT-23

Marking: 3S

TO-92

2N5551 MMBT5551

Description

This device is designed for general-purpose high-voltage

amplifiers and gas discharge display drivers.

2N5551 / MMBT5551 — NPN General-Purpose Amplifier

www.onsemi.com

2N5551 / MMBT5551 Rev. 22

Absolute Maximum Ratings(2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be op era-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

3. These ratings are based on a maximum junction temperature of 150 °C.

These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed

or low-duty cycle operations.

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol ParameterValueUnits

VCEO Collector-Emitter Voltage 160 V

VCBO Collector-Base V oltage 180 V

VEBO Emitter-Base Voltage 6 V

ICCollector current - Continuous 600 mA

TJ, Tstg(2) Junction and Storage Temperature -55 to +150 °C

Symbol Parameter Maximum Units

2N5551 MMBT5551

PDTotal Device Dissipation 625 350 mW

Derate above 25°C5.02.8mW/°C

RθJC Thermal Resistance, Junction to Case 83.3 °C/W

RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W

2N5551 / MMBT5551 — NPN General-Purpose Amplifier

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2N5551 / MMBT5551 Rev. 3

Electrical Characteristics(4)

Values are at TA = 25°C unless otherwise noted.

Note:

4. PCB board size FR-4 76 x 114 x 0.6 T mm3 (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size.

Symbol Parameter Test Condition Min. Max. Units

Off Characteristics

V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 160 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 100 μA, IE = 0 180 V

V(BR)EBO Emitter-Base Breakdown V o ltage IE = 10 μA, IC = 0 6.0 V

ICBO Collector Cut-Off Current VCB = 120 V, IE = 0 50 nA

VCB = 120 V, IE = 0, TA = 100°C50μA

IEBO Emitter Cut-Off Current VEB = 4.0 V, IC = 0 50 nA

On Characteristics

hFE DC Current Gain IC = 1.0 mA, VCE = 5.0 V 80

IC = 10 mA, VCE = 5.0 V 80 250

IC = 50 mA, VCE = 5.0 V 30

VCE(sat) Collector-Emi tter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.15 V

IC = 50 mA, IB = 5.0 mA 0.20 V

VBE(sat) Base-Emitter On Voltage IC = 10 mA, IB = 1.0 mA 1.0 V

IC = 50 mA, IB = 5.0 mA 1.0 V

Small-Signal Characteristics

fTCurrent Gain Bandwidth Product IC = 10 mA, VCE = 10 V,

f = 100 MHz 100 MHz

Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 6.0 pF

Cibo Input Capacitance VBE = 0.5 V, IC = 0, f = 1.0 MHz 20 pF

Hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 50 250

NF Noise Figure IC = 250 μA, VCE= 5.0 V,

RS=1.0 kΩ, f=10 Hz to 15.7 kHz 8.0 dB

2N5551 / MMBT5551 — NPN General-Purpose Amplifier

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2N5551 / MMBT5551 Rev. 24

Typical Performance Characteristics

Figure 1. Typical Pulsed Current Gain vs. Collector

Current Figure 2. Colle ctor-Emitter Saturation Voltage vs.

Collector Current

Figure 3. Base-Emitter Saturation Voltage vs.

Collector Current Figure 4. Base-Emitte r On Voltage vs. Collector

Current

Figure 5. Collector Cut-Off Current vs. Ambient

Temperature Figure 6. Input and Output Capacitance vs. Reverse

Voltage

1 10 100 1000

100

150

200

250 125oC

100oC

75oC

-40oC

25oC

VCE=5V

hFE- DC CURRENT GAIN

IC- COLLECTOR CURRENT [mA]

1 10 100

0.01

0.1

10 ?10

125oC

100oC

75oC

-40oC25oC

VCE(SAT)- COLLEC TOR-EMITTER VOLTAGE [V]

IC- COLLECTOR CURRENT [mA]

110100

0.2

0.4

0.6

0.8

1.0

125oC

100oC

75oC

-40oC

25oC

VBE(SAT)- BASE-EMITTER VOLTAGE [V]

IC- COLLECTOR CURRENT [mA]

1 10 100 1000

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TA = 125oCTA = 100oC

TA = 75oC

TA = -40oC

TA = 25oC

VBE(ON)- BASE-EMITTER VOLTAGE [V]

IC- COLLECTOR CURRENT [mA]

25 50 75 100 125

T - AMBIENT TEMP ERATURE ( C)

I - COLLECTOR CURRENT (nA)

CBO

V = 10 0V

012345678910

100

COB

CIB

CAPACITANCE [pF]

REVERSE BIAS VOLTAGE [V]

2N5551 / MMBT5551 — NPN General-Purpose Amplifier

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2N5551 / MMBT5551 Rev. 25

Typical Performance Characteristics (Continued)

Figure 7. Collector- Emitter Breakdown Voltage

with Resistance between Emitter-Base Figure 8. Small Signal Current Gain vs. Collector

Current

Figure 9. Power Dissipation vs. Ambient

Temperature

Between Emitter-Base

0.1 1 10 100 1000

160

180

200

220

240

260

RESISTANCE (k )

BV - BREAKDOWN VOLTAGE (V)

CER

I = 1.0 mA

Collector

Current

11050

I - COLLECTOR CURRENT (mA)

h - SMALL SIGNAL CURRENT GAIN

FREG = 20 MHz

V = 10V

0 25 50 75 100 125 150

100

200

300

400

500

600

700

TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

TO-92

SOT-23

2N5551 / MMBT5551 — NPN General-Purpose Amplifier

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2N5551 / MMBT5551 Rev. 26

Physical Dimensions

Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)

(ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packaging/tr/to92pdd_tr.pdf.

TO-92 (Bulk)

2N5551 / MMBT5551 — NPN General-Purpose Amplifier

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2N5551 / MMBT5551 Rev. 27

Physical Dimensions (Continued)

Figure 11. 3-LEAD, TO92, MOLDED, 0.200 IN-LINE SPACING LD FORM(J62Z OPTION) (ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packaging/tr/to92_tr.pdf.

TO-92 (Tape and Reel, Ammo)

2N5551 / MMBT5551 — NPN General-Purpose Amplifier

www.onsemi.com

2N5551 / MMBT5551 Rev. 28

Physical Dimensions (Continued)

Figure 12. 3- LEAD, SOT2 3 , JEDEC TO-236, LOW PROFILE (ACTIVE)

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/packaging/tr/SOT23-3L_tr.pdf.

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

SOT-23

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Rev. I64

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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

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