BFU630F,115 - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin

dual-emitter SOT343F package.

1.2 Features and benefits

Low noise high gain microwave transistor

Noise figure (NF) = 0.85 dB at 2.4 GHz

High maximum stable gain 26 dB at 1.8 GHz

40 GHz fT silicon technology

1.3 Applications

Low noise amplifiers for microwave communications systems

WLAN and CDMA applications

Analog/digital cordless applications

Ku band oscillators DRO’s

LNB

RKE

AMR

GPS

ZigBee

LTE, cellular, UMTS

FM radio

Mobile TV

Bluetooth

BFU630F

NPN wideband silicon RF transistor

Rev. 1 — 15 December 2010 Product data sheet

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

Product data sheet Rev. 1 — 15 December 2010 2 of 12

NXP Semiconductors BFU630F

NPN wideband silicon RF transistor

1.4 Quick reference data

[1] Tsp is the temperature at the solder point of the emitter lead.

[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).

2. Pinning information

3. Ordering information

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCBO collector-base voltage open emitter - - 16 V

VCEO collector-emitter voltage open base - - 5.5 V

VEBO emitter-base voltage open collector - - 2.5 V

ICcollector current - 3 30 mA

Ptot total power dissipation Tsp 90 C[1] - - 200 mW

hFE DC current gain IC=5mA; V

CE =2V;

Tj=25C90 135 180

CCBS collector-base

capacitance VCB =2V; f=1MHz - 47 - fF

fTtransition frequency IC=10mA; V

CE =2V;

f=2GHz; T

amb =25C-21- GHz

Gp(max) maximum power gain IC=15mA; V

CE =2V;

f=2.4GHz; T

amb =25C[2] - 24.5 - dB

NF noise figure IC=3mA; V

CE =2V;

f=2.4GHz; S=opt

-0.85- dB

PL(1dB) output power at 1 dB

gain compression IC=30mA; V

CE =2.5V;

ZS=Z

L=50;

f=2.4GHz; T

amb =25C

-11.5- dBm

Table 2. Discrete pinning

Pin Description Simplified outline Graphic symbol

1emitter

2base

3emitter

4 collector

mbb159

1, 3

Table 3. Ordering information

Type number Package

Name Description Version

BFU630F - plastic surface-mounted flat pack package; reverse

pinning; 4 leads SOT343F

Product data sheet Rev. 1 — 15 December 2010 3 of 12

NXP Semiconductors BFU630F

NPN wideband silicon RF transistor

4. Marking

5. Limiting values

[1] Tsp is the temperature at the solder point of the emitter lead.

6. Thermal characteristics

Table 4. Marking

Type number Marking Description

BFU630F D2* * = p : made in Hong Kong

* = t : made in Malaysia

* = w : made in China

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 16 V

VCEO collector-emitter voltage open base - 5.5 V

VEBO emitter-base voltage open collector - 2.5 V

ICcollector current - 30 mA

Ptot total power dissipation Tsp 90 C[1] - 200 mW

Tstg storage temperature 65 +150 C

Tjjunction temperature - 150 C

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resist ance from junction to solder point 300 K/W

Fig 1. Power derating curve

Tsp (°C)

0 16012040 80

001aam812

150

200

100

250

300

Ptot

(mW)

Product data sheet Rev. 1 — 15 December 2010 4 of 12

NXP Semiconductors BFU630F

NPN wideband silicon RF transistor

7. Characteristics

Table 7. Characteristics

Tj=25



C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

V(BR)CBO collector-base breakdown voltage IC=2.5A; IE=0mA 16 - - V

V(BR)CEO collector-emitter breakdown voltage IC=1mA; I

B=0mA 5.5 - - V

ICcollector current - 3 30 mA

ICBO collector-base cut-off current IE=0mA; V

CB =8V - - 100 nA

hFE DC current gain IC=5mA; V

CE = 2 V 90 135 180

CCES collector-emitter capacitance VCB = 2 V; f = 1 MHz - 264 - fF

CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz - 332 - fF

CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 47 - fF

fTtransition frequency IC=10mA; V

CE =2V; f=2GHz;

Tamb =25C-21- GHz

Gp(max) maximum power gain IC=15mA; V

CE =2V; T

amb =25C[1]

f=1.5GHz - 27 - dB

f=1.8GHz - 26 - dB

f = 2.4 GHz - 24.5 - dB

f=5.8GHz - 16 - dB

s212insertion power gain IC=15mA; V

CE =2V; T

amb =25C

f = 1.5 GHz - 22.5 - dB

f=1.8GHz - 21 - dB

f=2.4GHz - 19 - dB

f=5.8GHz - 12 - dB

NF noise figure IC=3mA; V

CE =2V; S= opt;

Tamb =25C

f=1.5GHz - 0.75 - dB

f=1.8GHz - 0.80 - dB

f=2.4GHz - 0.85 - dB

f=5.8GHz - 1.30 - dB

Gass associated gain IC=3mA; V

CE =2V; S= opt;

Tamb =25C

f = 1.5 GHz - 22.5 - dB

f=1.8GHz - 21 - dB

f=2.4GHz - 19 - dB

f=5.8GHz - 13 - dB

PL(1dB) output power at 1 dB gain compression IC=30mA; V

CE =2.5V;

ZS=Z

L=50; Tamb =25C

f = 1.5 GHz - 12.5 - dBm

f = 1.8 GHz - 12.5 - dBm

f = 2.4 GHz - 11.5 - dBm

f = 5.8 GHz - 12.5 - dBm

Product data sheet Rev. 1 — 15 December 2010 5 of 12

NXP Semiconductors BFU630F

NPN wideband silicon RF transistor

[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) =MSG.

IP3 third-order intercept point IC=30mA; V

CE =2.5V;

ZS=Z

L=50; Tamb =25C

f = 1.5 GHz - 25.5 - dBm

f=1.8GHz - 26 - dBm

f = 2.4 GHz - 26.5 - dBm

f = 5.8 GHz - 27.5 - dBm

Table 7. Characteristics …continued

Tj=25



C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

Tamb =25C.

(1) IB= 200 A

(2) IB= 180 A

(3) IB= 160 A

(4) IB= 140 A

(5) IB= 120 A

(6) IB= 100 A

(7) IB=80A

(8) IB=60A

(9) IB=40A

(10) IB=20A

VCE = 2 V; Tamb =25C.

Fig 2. Collector current as a function of

collector -em itter voltage; typical values Fig 3. DC current gain as a function of collector

current; typical values

VCE (V)

054231

001aam813

(mA)

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

IC (mA)

0302010

001aam814

100

150

200

hFE

Product data sheet Rev. 1 — 15 December 2010 6 of 12

NXP Semiconductors BFU630F

NPN wideband silicon RF transistor

f=1MHz, T

amb =25C. VCE = 2 V; f = 2 GHz; Tamb =25C.

Fig 4. Collector-base capacitance as a function of

collector-base voltage; typical values Fig 5. Transition frequency as a function of collector

current; typical values

VCE =2V; T

amb =25C.

(1) f = 1.5 GHz

(2) f = 1.8 GHz

(3) f = 2.4 GHz

(4) f = 5.8 GHz

Fig 6. Gain as a function of colle ctor current; typi ca l v al ue

001aam815

VCB (V)

01284

CCBS

(fF)

IC (mA)

0403010 20

001aam816

(GHz)

IC (mA)

050402010 30

001aam817

(dB)

(1)

(2)

(3)

(4)

MSG

Gp(max)

Product data sheet Rev. 1 — 15 December 2010 7 of 12

NXP Semiconductors BFU630F

NPN wideband silicon RF transistor

VCE =2V; I

C=5mA; T

amb =25C. VCE =2V; I

C=15mA; T

amb =25C.

Fig 7. Gain as a function of frequen cy; typ ical values Fig 8. Gain as a function of frequen cy; typical values

VCE =2V; T

amb =25C.

(1) f = 5.8 GHz

(2) f = 2.4 GHz

(3) f = 1.8 GHz

(4) f = 1.5 GHz

VCE =2V; I

C = 3 mA; Tamb =25C.

Fig 9. Minimum noise figure as a func tion of

collector current; typical valu es Fi g 10 . Minimum noise figure as a function of

frequency; typical values

f (GHz)

0252010 155

001aam818

(dB)

MSG

|S21|2

Gp(max)

f (GHz)

0252010 155

001aam819

(dB)

MSG

|S21|2

Gp(max)

IC (mA)

0108462

001aam820

0.8

1.6

0.4

1.2

2.0

NFmin

(dB)

(1)

(2)

(3)

(4)

001aam821

f (GHz)

08624

1.0

0.5

1.5

2.0

NFmin

(dB)

Product data sheet Rev. 1 — 15 December 2010 8 of 12

NXP Semiconductors BFU630F

NPN wideband silicon RF transistor

8. Package outline

Fig 11. Package outline SOT343F

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT343F

05-07-12

06-03-16

UNIT A

max

mm 0.4

0.3

0.75

0.65 0.7

0.5 2.2

1.8

0.25

0.10 1.35

1.15 0.48

0.38

2.2

2.0

DIMENSIONS (mm are the original dimensions)

Plastic surface-mounted flat pack package; reverse pinning; 4 leads

b1c D E e e1HE

1.151.3

Lpw y

0.10.2

0 1 2 mm

scale

detail X

bpb1

Product data sheet Rev. 1 — 15 December 2010 9 of 12

NXP Semiconductors BFU630F

NPN wideband silicon RF transistor

9. Abbreviations

10. Revision history

Table 8. Abbreviations

Acronym Description

AMR Automatic Meter Reading

CDMA Code Division Multiple Access

DC Direct Current

DRO Dielectric Resonator Oscillator

FM Frequency Mo dulation

GPS Global Positioning System

LNA Low Noise Amplifier

LNB Low Noise Block

LTE Long Term Evolution

NPN Negative-Positive-Negative

RF Radio Frequency

RKE Remote Keyless Ent ry

UMTS Universal Mobile Telecommunications System

WLAN Wireless Local Area Network

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BFU630F v.1 20101215 Product data sheet - -

Product data sheet Rev. 1 — 15 December 2010 10 of 12

NXP Semiconductors BFU630F

NPN wideband silicon RF transistor

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product st atus of de vice(s) d escribed in th is docume nt may have changed since this docume nt was pub lished and may dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

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data sheet shall define the specification of the product as agreed between

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deemed to off er functions and qualities beyond tho se described in the

Product data sheet.

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Notwithstanding any damages that customer might incur for any reason

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Applications — Applications that are described herein for any of these

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representation or warranty tha t such application s will be suitable for the

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Customers are responsible for the design and ope ration of their applications

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testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualificatio n This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 15 December 2010 11 of 12

NXP Semiconductors BFU630F

NPN wideband silicon RF transistor

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for aut omotive use. It i s neither qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in au tomotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standard s, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

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liability, damages or failed product claims resulting f rom customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BFU630F

NPN wideband silicon RF transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 15 December 2010

Document identifier: BFU630F

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Contact information. . . . . . . . . . . . . . . . . . . . . 11

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12