MIL-PRF-19500/543F
7 September 2001
SUPERSEDING
MIL-PRF-19500/543E
5 August 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON
REPETITIVE AVALANCHE TYPES 2N6764, 2N6766, 2N6768, 2N6770,
JAN, JANTX, JANTXV, JANS, JANHC and JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode,
MOSFET, power transistors. Four levels of product assurance are provided for each encapsulated device type as
specified in MIL-PRF-19500 and two levels of product assurance for each unencapsulated die, with avalanche
energy ratings (EAS and EAR) and maximum avalanche current (IAR).
1.2 Physical dimensions. See figure 1 (TO-204AE for types 2N6764 and 2N6766; TO-204AA for types 2N6768
and 2N6770 (formerly TO-3)), see figures 2 and 3 for JANHC and JANKC (die) dimensions.
1.3 Maximum ratings. (TA = +25°C, unless otherwise specified).
Type PT (1)
TC = +25° CPT
TC = +25° C VDS VDG VGS ID1 (2)
TC = +25° CISID2 (2)
TC = +100° C
2N6764
2N6766
2N6768
2N6770
W
150
150
150
150
W
4
4
4
4
V dc
100
200
400
500
V dc
100
200
400
500
V dc
± 20
± 20
± 20
± 20
A dc
38.0
30.0
14.0
12.0
A dc
38.0
30.0
14.0
12.0
A dc
24.0
19.0
9.0
7.75
IDM
(3) EAS EAR IAR Max rDS(on) (1);
VGS = 10 V dc
ID = ID2
Type VISO
70,000
ft.
attitude
TSTG
and
TOP
TJ = +25° C TJ = +150° C
RθJC
max
2N6764
2N6766
2N6768
2N6770
A pk
152
120
56
48
A
150
500
700
750
mJ
15
15
15
15
mJ
38.0
30.0
14.0
12.0 400
500
°C
-55
to
+150
Ω
0.055
0.085
0.300
0.400
Ω
0.105
0.170
0.750
1.000
°C/W
0.83
0.83
0.83
0.83
See notes on next page.
AMSC/NA FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 7 December 2001.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement
Proposal (DD Form 1426) appearing at the end of this document or by letter.
MIL-PRF-19500/543F
2
1.3 Maximum ratings - Continued.
(1) Derate linearly, 1.2 W/°C for TC > +25° C. PT = TJ max - TC.
RθJC
(2) max
max
T
at
R
+
RT
-
T
=
IJ
DS(on)JC
CJ
D
θ
.
(3) IDM = 4 x ID1 as calculated in note 2.
1.4 Primary electrical characteristics at TC = +25°C.
Type Min V(BR)DSS
VGS = 0V
ID = 1 mA dc
IAR
(1) EAS EAR Max rDS(on)
VGS = 10 Vdc
ID = ID2
VGSth1
VDS ≥ VGS
ID = 0.25 mA
Max IDSS1
VGS = 0 V
VDS = 80 percent
of rated VDS
2N6764
2N6766
2N6768
2N6770
Vdc
100
200
400
500
A
38.0
30.0
14.0
12.0
mJ
150
500
700
750
mJ
15.0
15.0
15.0
15.0
Ω
0.055
0.085
0.3
0.4
min max
2.0 4.0
2.0 4.0
2.0 4.0
2.0 4.0
µAdc
25
25
25
25
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. W hile every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from
the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
.
MIL-PRF-19500/543F
3
FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766, TO-204AE;
for types 2N6768 and 2N6770, TO-204AA.
MIL-PRF-19500/543F
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Dimensions
Ltr Inches Millimeter Notes
Min Max Min Max
CD .875 22.23
CH .250 .360 6.35 9.15
HR .495 .525 12.57 13.3
HR1.131 .188 3.33 4.78
HT .060 .135 1.52 3.43
LD .057 .063 1.45 1.60 5
.038 .043 0.97 1.10 6
LL .312 .500 7.92 12.70
L1.050 1.27 3
MHD .151 .161 3.84 4.09 7
MHS 1.177 1.197 29.90 30.04
PS .420 .440 10.67 11.18
PS1.205 .225 5.21 5.72
s .655 .675 16.64 17.15
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. These dimensions shall be measured at points .050 inch (1.27 mm) and .055 inch (1.40
mm) below the seating plane. When gauge is not used, measurement will be made at the
seating plane.
4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch
(0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header
and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) convex overall.
5. These dimensions pertain to the 2N6764 and 2N6766 types.
6. These dimensions pertain to the 2N6768 and 2N6770 types.
7. Mounting holes shall be deburred on the seating plane side.
8. Drain is electrically connected to the case.
FIGURE 1. Physical dimensions of transistor types 2N6764 and 2N6766 TO-204AE;
for types 2N6768 and 2N6770, TO-204AA - Continued.
MIL-PRF-19500/543F
5
Dimensions 2N6764 and 2N6766 Dimensions 2N6768 and 2N6770
Ltr Inches Millimeters Inches Millimeters
Min Max Min Max Min Max Min Max
A .252 .262 6.40 6.65 .252 .262 6.40 6.65
B .252 .262 6.40 6.65 .252 .262 6.40 6.65
C .027 .037 0.69 0.94 .025 .035 0.64 0.89
D .012 .022 0.30 0.56 .043 .053 1.09 1.35
E .057 .067 1.45 1.70 .032 .042 0.81 1.07
F .013 .023 0.33 0.58 .015 .025 0.38 0.64
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is ± .005 inch (0.13 mm).
4. The physical characteristics of the die thickness are .0187 inch (0.474 mm). The back metals are
chromium, nickel and silver. The top metal is aluminum and the back contact is the drain.
FIGURE 2. JANHC and JANKC A-version die dimensions.
MIL-PRF-19500/543F
6
Dimensions
Inches Millimeters
Min Max Min Max
A .259 .269 6.58 6.83
B .253 .263 6.43 6.68
C .065 .075 1.65 1.91
D .045 .055 1.14 1.40
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is ± .005 inch (0.13 mm).
4. The physical characteristics of the die thickness are .014 inch (0.36 mm). The back metals are
nickel, aluminum and titanium. The top metal is aluminum and the back contact is the drain.
FIGURE 3. JANHC and JANKC B-version die dimensions.
MIL-PRF-19500/543F
7
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1, 2 and 3.
3.4.1 Lead material and finish. Lead material shall be Kovar or Alloy 52; a copper core or a plated core is
permitted. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein.
3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the
devices to meet the applicable requirements of MIL-PRF-19500 and herein.
3.4.3 Internal construction. Multiple chip construction is not permitted to meet the requirements of this
specification.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.
3.6.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation
of static discharge. The following handling practices are recommended (see 3.5)
a. Devices shall be handled on benches with conductive and grounded surface.
b. Ground test equipment, tools and personnel handling devices.
c. Do not handle devices by the leads.
d. Store devices in conductive foam or carriers.
e. Avoid use of plastic, rubber, or silk in MOS areas.
f. Maintain relative humidity above 50 percent if practical.
g. Care shall be exercised during test and troubleshooting to apply not more than maximum
rated voltage to any lead.
h. Gate shall be terminated to source, R < 100 k, whenever bias voltage is to be applied drain
to source.
3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4 and table I.
3.8 Electrical test requirements. The electrical test requirements shall be subgroups specified in 4.4.2 and 4.4.3.
MIL-PRF-19500/543F
8
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be as specified in
MIL-PRF-19500, appendix G.
4.3 Screening (JANS, JANTXV and JANTX levels only). Screening shall be in accordance with appendix E, table
IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table
I herein. Devices that exceed the limits of table I shall not be acceptable.
Screen (see
MIL-PRF-19500, Measurements
appendix E, table IV JANS level JANTX and JANT XV
(1) Gate stress test (see 4.5.5) Gate stress test (see 4.5.5).
(1) (2) Method 3470 of MIL-STD-750, (see 4.5.4) Method 3470 of MIL-STD-750, (see 4.5.4)
(1) (3) Method 3161 of MIL-STD-750, (see 4.5.3) Method 3161 of MIL-STD-750, (see 4.5.3)
9I
GSS1, IDSS1
10 Method 1042 of MIL-STD-750, test condition B Method 1042 of MIL-STD-750, test condit ion B
11 IGSS1, IDSS1, rDS(on)1.
VGS(th)1 of subgroup 2 of table I herein.
∆IGSS1 = ± 20 nA dc or ± 100 percent of
initial value, w hichever is great er.
∆IDSS1 = ± 25 µA dc or ± 100 percent
of initial value, w hichever is great er
IGSS1, IDSS1, rDS(on)1.
VGS(th)1 of subgroup 2 of table I herein
12 Method 1042 of MIL-STD-750, test condition A or
t = 240 hours Method 1042 of MIL-STD-750, test condition A, t =
48 hours minimum at TA = +175° C minimum.
13 Subgroups 2 and 3 of table I.
∆IGSS1 = ± 20 nA dc or ± 100 percent
of initial value whichever is great er.
∆IDSS1 = ± 25 µA dc or ± 100 percent
of initial value whichever is great er.
∆rDS(on)1 = ± 20 percent of initial value
∆VGS(th)1 = ± 20 percent of initial value.
Subgroup 2 of table I herein.
∆IGSS1 = ± 20 nA dc or ± 100 percent
of initial value whichever is great er.
∆IDSS1 = ± 25 µA dc or ± 100 percent
of initial value whichever is great er.
∆rDS(on)1 = ± 20 percent of initial value.
∆VGS(th)1 = ± 20 percent of initial value.
(1) Shall be performed anytime before screen 10.
(2) This test method in no way implies a repetitive avalanche energy rating.
(3) This test need not be performed in group A when performed as a screen.
MIL-PRF-19500/543F
9
4.3.1 Screening (JANHC and JANKC). Screening shall be in accordance with appendix E, table IV of
MIL-PRF 19500. As a minimum, die shall be 100 percent probed in accordance with group A, subgroup 2 except
test current shall not exceed 20 A.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. Alternate flow is allowed for conformance inspection in accordance with figure 4 of
MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of
MIL-PRF-19500. End-point electrical and delta measurements shall be in accordance with the applicable tests of
table III herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table VIa (JANS) and table VIb (JANTX, JANTXV and JAN) of MIL-PRF-19500 and
as follows. End-point electrical and delta measurements shall be in accordance wi th the applicable steps of table III
herein.
4.4.2.1 Group B inspection, appendix E, table VIa (JANS) of MIL-PRF-19500.
Subgroup Method Conditions
B3 1051 Test condition G.
B4 1042 Test condition D; the heating cycle shall be 1 minimum for 2,000 cycles.
B5 1042 Test condition A; VDS = rated VDS (see 1.3), TA = 175° C, t = 120 hours
minimum, read and record VBR(DSS) (pre and post) at ID = 1 mA, read and
record IDSS (pre and post), (see table III).
B5 1042 Test condition B; VGS = rated VGS (see 1.3), TA = 175° C, t = 24 hours
minimum.
B6 3161 See 4.5.2.
4.4.2.2 Group B inspection, appendix E, table VIb (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup Method Conditions
B2 1051 Test condition G.
B3 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum.
B5, B6 Not applicable.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table VII of MIL-PRF-19500. End-point electrical and delta measurements shall be
in accordance with the applicable steps of table III herein.
MIL-PRF-19500/543F
10
4.4.3.1 Group C inspection, appendix E, table VII of MIL-PRF-19500.
Subgroup Method Conditions
C2 2036 Test condition A; weight = 10 lbs, t = 15 seconds.
C6 1042 Test condition D; 6,000 cycles minimum. The heating cycle shall be 1 minute
minimum.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method
3161 of MIL-STD-750. RθJCmax = 0.83° C /W .
a. IM measuring current ........................ 10 mA.
b. IH drain heating current .................... 4 A minimum.
c. tH heating time .................................. Steady-state (see method 3161 of MIL-STD-750 for definition).
d. VH drain-source heating voltage ...... 25 V minimum.
e. tMD measurement time delay ........... 30 to 60 µs.
f. tSW sample window time .................. 10 µs (max).
4.5.3 Thermal response (∆VSD measurements). The delta VSD measurements shall be performed with method
3161 of MIL-STD-750. The delta VSD conditions (IH and VH) and maximum limit shall be derived by each vendor
from the thermal response curves (see figure 4). The read and record delta VSD measurements and conditions for
each device in the qualification lot shall be submitted in the qualification report. The chosen delta VSD shall be
considered final after the manufacturer has had the opportunity to test five consecutive lots. The following parameter
measurements shall apply:
a. IM measuring current ........................ 10 mA.
b. IH drain heating current .................... 4 A minimum.
c. tH heating time ................................. 100 ms.
d. VH drain-source heating voltage....... 25 V minimum.
e. tMD measurement time delay ........... 30 to 60 µs.
f. tSW sample window time .................. 10 µs (max).
MIL-PRF-19500/543F
11
4.5.4 Single pulsed unclamped inductive switching.
a. Peak current ................................. ID1.
b. Peak gate voltage, VGS ................ 10 V.
c. Gate to source resistor, RGS......... 25 ≤ Rg ≤ 200 ohms.
d. Initial case temperature................. +25°C, +10°C, -5°C.
e. Inductance, L................................. mH minimum.
f. Number of pulses to be applied..... 1 pulse minimum.
g. Supply voltage (VDD).................... 50 V, (25 V for devices with minimum V(BR)DSS of 100 V).
() ()
2
1
2
E
I
VV
V
AS
D
BR DD
BR
−
MIL-PRF-19500/543F
12
TABLE I. Group A inspection.
Inspection 1/ MIL-STD-750 Symbol Limits Unit
Method Conditions Min Max
Subgroup 1
Visual and mechanical
inspection
Subgroup 2
Breakdown voltage
drain to source
2N6764
2N6766
2N6768
2N6770
Gate to source voltage
(threshold)
Gate current
Drain current
Static drain to source
on-state resistance
2N6764
2N6766
2N6768
2N6770
Static drain to source
on-state resistance
2N6764
2N6766
2N6768
2N6770
Forward voltage
(source-drain diode)
2N6764
2N6766
2N6768
2N6770
2071
3407
3403
3411
3413
3421
3421
4011
VGS = 0 V dc; ID = 1 mA dc,
bias condition C
VDS > VGS;
ID = 0.25 mA dc
VGS = +20 and -20 V dc;
bias condition C, VDS = 0
VGS = 0 V dc;
VDS = 80 percent of rated VDS,
bias condition C
VGS = 10 V dc, pulsed
(see 4.5.1), condit ion A
ID = rated I D2 (see 1.3)
TC = +25° C.
VGS = 10 V dc, pulsed
(see 4.5.1), condit ion A
ID = rated I D1 (see 1.3)
Pulsed (see 4.5.1)
VGS = 0 V, ID = ID1
V(BR)DSS
VGS(th)1
IGSS1
IDSS1
rDS(on)1
rDS(on)2
VSD
100
200
400
500
2.0 4.0
100
25
0.055
0.085
0.3
0.4
0.065
0.09
0.40
0.50
1.9
1.9
1.7
1.7
V dc
V dc
nA dc
µA dc
Ω
Ω
V dc
See footnote at end of table.
MIL-PRF-19500/543F
13
TABLE I. Group A inspection - Continued.
Inspection 1/ MIL-STD-750 Symbol Limits Unit
Method Conditions Min Max
Subgroup 3
High temperature
operation:
Gate current
Drain current
Static drain to source
on-state resistance
2N6764
2N6766
2N6768
2N6770
Gate to source voltage
(threshold)
Low temperature
operation:
Gate to source voltage
(threshold)
Subgroup 4
Switching time t est
Turn-on delay time
Rise time
Turn-off delay time
Fall time
3411
3413
3421
3403
3472
TC = +125° C
Bias condition C;
VGS = +20 and -20 V dc
VDS = 0 V dc
Bias condition C;
VGS = 0 V dc
VDS = 100 percent of
rated VDS
VDS = 80 percent of
rated VDS
VGS = 10 V dc pulsed
(see 4.5.1)
ID = rated I D2 (see 1.3)
VDS > VGS;
ID = 0.25 mA dc
TC = -55° C
VDS > VGS;
ID = 0.25 mA dc
ID = rated I D1 (see 1.3)
VGS = 10 V dc
Gate drive impedance = 2.35 Ω
VDD = 0.5 VBR(DSS)
IGSS2
IDSS2
IDSS3
rDS(on)3
VGS(th)2
VGS(th)3
td(on)
tr
td(off)
tf
1.0
200
1.0
0.25
0.094
0.153
0.66
0.88
5.0
35
190
170
130
nA dc
mA dc
mA dc
Ω
V dc
V dc
ns
ns
ns
ns
See footnote at end of table.
MIL-PRF-19500/543F
14
TABLE I. Group A inspection - Continued.
Inspection 1/ MIL-STD-750 Symbol Limits Unit
Method Conditions Min Max
Subgroup 5
Safe operating area test
Electrical measurements
Subgroup 6
Not applicable
Subgroup 7
Gate charge
On-state gat e charge
2N6764
2N6766
2N6768
2N6770
Gate to source charge
2N6764
2N6766
2N6768
2N6770
Gate to drain charge
2N6764
2N6766
2N6768
2N6770
Reverse recovery time
2N6764
2N6766
2N6768
2N6770
3474
3471
3473
See figure 5,
VDS = 80 percent of
rated VBR(DSS)
tp = 10 ms,
VDS = 200 V max.
See table III, steps, 1, 2, 3, 4, 5
6 and 7.
Bias condition B
di/dt = 100 A/µs
VDD ≤ 30 V dc, I D = ID1
Qg(on)
Qgs
Qgd
trr
125
115
110
120
22
22
18
19
65
60
65
70
500
950
1,200
1,600
nC
nC
nC
nC
1/ For sampling plan, see MIL-PRF-19500.
MIL-PRF-19500/543F
15
TABLE II. Group E inspection (all quality levels) for qualification only.
Inspection 1/ MIL-STD-750 Qualification and large
lot
Method Conditions quality conformance
inspection
Subgroup 1
Temperature cycling
Hermetic seal
Fine leak
Gross leak
Electrical measurements
Subgroup 2 1/
Steady-state reverse bias
Electrical measurements
Steady-state gate bias
Electrical measurements
Subgroup 3
Not applicable
Subgroup 4
Thermal resistance
Subgroup 5
Barometric pressure
(reduced)
400 V and 500 V only
Subgroup 6
Not applicable
Subgroup 7
Repetive avalanche energy
1051
1071
1042
1042
3161
1001
3469
Test condition G , 500 cycles
See table III, steps, 1, 2, 3, 4, 5, 6 and 7.
Condition A; 1,000 hours
See table III, steps, 1, 2, 3, 4, 5, 6 and 7.
Condition B, 1,000 hours
See table III, steps, 1, 2, 3, 4, 5, 6 and 7.
RθJC = 0.83° C/W max. (see 4. 5.2)
Test condition C;
I(ISO) = .25 mA (max),
V(ISO) = VDS
IAR = ID; VGS = 10 V;
2.5 ≤ RGS ≤ 200 ohms;
TJ = 150°C +10, -0 °C;
Inductance =
()
2
1
2
E
I
VV
VmH
AR
D
BR DD
BR
−
min
Number of pulses to be applied = 3.6 X 108;
(VDD) = 50 V;
time in avalanche = 2 µs minimum, 20 µs max imum;
f = 1 KHz
45 devices, c = 0
45 devices, c = 0
5 devices, c = 0
5 devices, c = 0
5 devices, c = 0
1/ A separate sample may be pulled for each test.
MIL-PRF-19500/543F
16
TABLE III. Groups A, B, C and E electrical measurements. 1/ 2/ 3/
Step Inspection MIL-STD-750 Symbol Limits Unit
Method Conditions Min Max
1. Breakdown voltage
drain to source
2N6764
2N6766
2N6768
2N6770
3407 VGS = 0, ID = 1 mA dc bias
condition C; V(BR)DSS
100
200
400
500
V dc
2. Gate to source voltage
(threshold) 3404 VDS ≥ VGS
ID =0.25 mA dc
VGS(th)1 2.0 4.0 V dc
3. Gate current 3411 VGS = 20
Bias condition C; IGSS1 100 nA dc
4.
5.
6.
7.
8.
Saturation voltage
and resistance
Static drain to source
on-state resistance
2N6764
2N6766
2N6768
2N6770
Static drain to source
on-state resistance
2N6764
2N6766
2N6768
2N6770
Forward voltage
(source-drain diode)
2N6764
2N6766
2N6768
2N6770
Thermal response
3413
3421
3421
4011
3131
VGS = 0 VDS = 80 percent
of rated VD, bias condition
C;
VGS = 10 V dc
condition A, pulsed (see
4.5.1). ID = ID2
VGS = 10 V dc
condition A, pulsed (see
4.5.1). ID = ID1
VGS = 0 V dc;
ID = ID1
pulsed (see 4.5.1)
See 4.5.3
IDSS1
rDS(on)1
rDS(on)2
VSD
∆VSD
25
0.055
0.085
0.3
0.4
0.065
0.090
0.400
0.500
1.9
1.9
1.7
1.7
µA dc
ohms
ohms
V
See footnotes on next page
MIL-PRF-19500/543F
17
TABLE III. Groups A, B, C and E electrical measurements. 1/ 2/ 3/ - Continued.
1/ The electrical measurements for appendix E, table VIa (JANS) of MIL-PRF-19500 are as follows:
a. Subgroup 3, table III, steps 1, 2, 3, 4, 5, 6 and 7.
b. Subgroup 4, table III, steps 1, 2, 3, 4, 5, 6, 7 and 8.
c. Subgroup 5, table III, condition A, steps 1, 2, 3, 4, 5, 6 and 7. No more than 15 percent of the sample
shall be permitted to have a ∆VBR(DSS) shift of more than 10 percent and ∆IDSS greater than 50 µA.
Subgroup 5, table III, condition B, steps 1, 2, 3, 4, 5, 6 and 7.
2/ The electrical measurements for appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as
follows:
a. Subgroup 2, table III, steps 1, 2, 3, 4, 5, 6 and 7.
b. Subgroup 3, table III, steps 1, 2, 3, 4, 5, 6, 7 and 8.
3/ The electrical measurements for appendix E, table VII of MIL-PRF-19500 are as follows:
a. Subgroup 2, table III, steps 1, 2, 3, 4, 5, 6 and 7.
b. Subgroup 3, table III, steps 1, 2, 3, 4, 5, 6 and 7.
c. Subgroup 6, table III, steps 1, 2, 3, 4, 5, 6, 7 and 8.
MIL-PRF-19500/543F
18
t1 RECTANGLE PULSE DURATION (SECONDS)
FIGURE 4. Thermal response curves.
MIL-PRF-19500/543F
19
2N6764
FIGURE 5. Safe operating area graph.
MIL-PRF-19500/543F
20
2N6766
FIGURE 5. Safe operating area graph - Continued.
MIL-PRF-19500/543F
21
2N6768
FIGURE 5. Safe operating area graph - Continued.
MIL-PRF-19500/543F
22
2N6770
FIGURE 5. Safe operating area graph - Continued.
MIL-PRF-19500/543F
23
5. PACKAGING
5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and
shall not be detrimental to the device. When actual packaging of materiel is to be performed by DoD personnel,
these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements.
Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military
Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM
products, or by contacting the responsible packaging activity.
5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. The acquisition requirements are as specified in MIL- PRF-19500.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML) whether or not such
products have actually been so listed by that date. The attention of the contractors is called to these requirements
and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government
tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered
by this specification. Information pertaining to qualification of products may be obtained from: Defense Supply
Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4 Substitution information. Devices covered by this specification are substitutable for the manufacturer's and
user's PIN. This information in no way implies that manufacturer's PINs are suitable as a substitute for the military
Part or Identifying Number (PIN).
PIN Manufacturer’s CAGE code Manufacturer’s and user’s PIN
2N6764
2N6766
2N6768
2N6770
59993, 18722
59993, 18722
59993, 18722
59993, 18722
IRF150, IRF151, IRF152, IRF153
IRF250, IRF251, IRF252, IRF253
IRF350, IRF351, IRF352, IRF353
IRF450, IRF451, IRF452, IRF453
6.5 Replacement data. JANTX devices shall be a direct one way replacement for JAN devices (example:
JANTX2N6764 for JAN2N6764).
MIL-PRF-19500/543F
24
6.6 Suppliers of JANC die. The qualified JANC suppliers with the applicable letter version (example
JANHCAM2N6764) will be identified on the QPL.
JANC ordering inforation
PIN Manufacturer
59993 18722
2N6764
2N6766
2N6768
2N6770
JANHCA2N6764
JANTXHCA2N6764
JANTXVHCA2N6764
JANSHCA2N6764
JANHCA2N6766
JANTXHCA2N6766
JANTXVHCA2N6766
JANSHCA2N6766
JANHCA2N6768
JANTXHCA2N6768
JANTXVHCA2N6768
JANSHCA2N6768
JANHCA2N6770
JANTXHCA2N6770
JANTXVHCA2N6770
JANSHCA2N6770
JANHCB2N6764
JANTXHCB2N764
JANTXVHCB2N6764
JANSHCB2N6764
JANHCB2N6766
JANTXHCB2N766
JANTXVHCB2N6766
JANSHCB2N6766
JANHCB2N6768
JANTXHCB2N768
JANTXVHCB2N6768
JANSHCB2N6768
JANHCB2N6770
JANTXHCB2N770
JANTXVHCB2N6770
JANSHCB2N6770
6.7 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect
to the previous issue due to the extent of the changes.
Custodians: Preparing activity:
Army - CR DLA - CC
Navy -NW
Air Force - 11 (Project 5961-2365)
DLA - CC
Review activities:
NAVY - TD
Air Force - 19, 70, 99
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER
MIL-PRF-19500/543F 2. DOCUMENT DATE
7 September 2001
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON REPETITIVE AVALANCHE TYPES
2N6764, 2N6766, 2N6768, 2N6770, JAN, JANTX, JANTXV, JANS, JANHC and JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial) b. ORGANIZATION
c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code)
COMMERCIAL
DSN
FAX
EMAIL
7. DATE S UBMITTED
8. PREPARING ACTIVITY
a. Point of Contact
Alan Barone
b. TELEPHONE
Commercial DSN FAX EMAIL
614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus
ATTN: DSCC-VAC
P.O. Box 3990
Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
DD Form 1426, Feb 1999 (EG) Previous editions are obsolete WHS/DIOR, Feb 99
