PD-9.568B IRFP360 International | Rectifier HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated D _ \solated Central Mounting Hole Voss = 400V Fast Switching a Ease of Paralleling 6 A Rpsi(on) = 0.202 @ Simple Drive Requirements S Ip = 23A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO-247AC Absolute Maximum Ratings Parameter Max. Units Ip @ To = 25C Continuous Drain Current, Ves @ 10 V 23 Ip @ Tc =100C | Continuous Drain Current, Vas @ 10 V 14 A fom Puised Drain Current 92 Pp @ Tc = 25C | Power Dissipation 280 Ww Linear Derating Factor 2.2 wre Vas Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy 1200 mJ laR Avalanche Current 23 A Ear Repetitive Avalanche Energy 28 mJ dv/dt Peak Diode Recovery dv/dt 4.0 Vins | Ty Operating Junction and -55 to +150 Tsta Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 Nem) Thermal Resistance Parameter Min. Typ. Max. Units Rac Junction-to-Case =_ _ 0.45 Recs Case-to-Sink, Flat, Greased Surface 0.24 C/W Rea Junction-to-Ambient _ 40 1001IRFP360 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vierypss Drain-to-Source Breakdown Voltage 400 _ _ V_ | Ves=0V, Ip= 250A AViarypss/ATy| Breakdown Voltage Temp. Coefficient | 056! | V/C | Reference to 25C, Ip= 1mMA Ros(on) Static Drain-to-Source On-Resistance _ | 0.20 Q | Ves=10V, Ip=14A @ Vasith Gate Threshold Voltage 2.0 _ 4.0 V__| Vos=Ves, In= 250HA Dts Forward Transconductance 14 _ _ S| Vos=50V, Ip=i4A @ loss Drain-to-Source Leakage Current ~{ 1 2% | i, Vos=400V, Ves-0V 250 Vps=320V, Vas=0V, Ty=125C lass Gate-to-Source Forward Leakage | 100 nA Vas=20V Gate-to-Source Reverse Leakage _ | -100 Vas=-20V Qg Total Gate Charge = = _| 210 Ip=23A Qgs Gate-to-Source Charge | | 30 | nC | Vps=320V Qoa Gate-to-Drain (Miller') Charge _ | 110 Vas=10V See Fig. 6 and 13 tavon) Turn-On Delay Time = 18 _ Vop=200V t Rise Time _ 79 _ ns Ip=23A tarotf} . Turn-Off Delay Time _ 100 _ Re=4.3Q tr Fall Time _ 67 _ Rpo=8.3Q See Figure 10 Lp Internal Drain Inductance ~ 5.0 _ Boe oe : nH | from package (= Ls Internal Source Inductance 113} and center of die contact s Ciss Input Capacitance | 4500) Vas=0V Coss Output Capacitance |1100; pF | Vos= 25V Crss Reverse Transfer Capacitance _ 490 _ _f=1,0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 23 MOSFET symbol 5 (Body Diode) A showing the Ism Pulsed Source Current _ _ 92 integral reverse a (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ _ 1.8 V | Ty=25C, Is=23A, Vas=0V tre Reverse Recovery Time |} 420 | 630 ns} Ty=25C, Ir=23A Qn Reverse Recovery Charge 56 | 84 | nC |di/dt=100A/iIs @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: Repetitive rating; pulse width limited by Isps23A, di/dt<170A/us, Vop<sV(BR)Dss, max. junction temperature (See Figure 11) Tys150C. Vpp=50V, starting Ty=25C, L=4.0mH @ Pulse width < 300 ys; duty cycle <2%. Re=25Q, las=23A (See Figure 12) 1002Ip, Drain Current (Amps) Ip, Drain Current (Amps) 20us PULSE WD C= 25C 107 1 Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C Vpg = 5OV 20us_ PULSE WIDTH 4 7 8 10 Vas. Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Rpscon), Drain-to-Source On Resistance Ip, Drain Current (Amps) (Normalized) IRFP360 to! 100 20us WIDTH Te = 150C 407! 10 to! Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, Tc=150C Ves = 10V 0.0 ~60 -40 -20 0 20 40 60 80 100 120 140 160 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 1003IRFP360 10000 ny oS = 4MHz = Cgg + gg, Cyg SHORTED = Cag + a000 Is D 6000 Ciss i ro Be 3 S S Capacitance (pF Vas, Gate-to-Source Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Ip, Drain Current (Amps) 101 Isp, Reverse Drain Current (Amps) Veg = Ov Q. 1. 4. 2.0 2.5 Vsp, Source-to-Drain Voltage (volts) Fig 7. Typical Source-Drain Diode Forward Voltage 403 SEE FIGURE 13 QO 40 a0 120 160 200 Qg, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED 5 BY Ros (on) 2 J= 150C INGLE PULSE 1 a 5 10 2 5 402 2 5 404 Vos, Drain-to-Source Voltage (volts) Fig 8. Maximum Safe Operating Area 1004IRFP360 Ip, Drain Current (Amps) Vos Wr D.U.T. K ="Vpo YP10Vv Pulse Width < tps Duty Factor < 0.1% ae | | | | 10% + 25 50 75 400 125 150 Ves/! \ ry fool presen awe he. Tc, Case Temperature (C) taon) tr tarot Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 102 SINGLE PULSE (THERMAL RESPONSE} Poh pte tad NOTES: 4. DUTY FACTOR, O=t4/t2 2. PEAK Ty=Ppm x Zthjc + Tc 10 1058 10-4 103 108 0.1 1 40 t;, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal impedance, Junction-to-Case 1005IRFP360 Vary tp to obtain Vos > required Jas Ip TOP 410A 15A TTOM 234 e Eas, Single Pulse Energy (mJ) DO = SOV Vps_| / 25 50 75 100 125 150 Starting Ty, Junction Temperature(C) AS ~ To Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator Q tov er SESS [poss Qep Vas Ve smal Charge + le Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1511 Appendix C: Part Marking Information See page 1517 International Rectifier 1006