CDiL sess sows SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors Marking PACKAGE OUTLINE DETAILS BCW31 = Dl ALL DIMENSIONS IN mm BCW32 = D2 BCW33 = D3 Pin configuration 1 = BASE 2= EMITTER 3 = COLLECTOR 3 BS, 2 ABSOLUTE MAXIMUM RATINGS BCW31 BCW32 BCW33 D.C. current gain at Tj = 25 C > 110 | 200 | 420 Ic = 2 mA; Vcg=5 V hfe < 220 450 | 800 Collector~base voltage (open emitter) Vcspo max. 32 Vv Collector~emitter voltage (open base) VcEO max. 32 Vv Collector current (peak value) Icm = max. 200 mA Total power dissipation up to Tamb = 25 C Prot max. 250 mW Junction temperature T; max. 150 C Transition frequency at f = 35 MHz Ic = 2 mA; Vcp=5 V fr typ. 300 MHz Noise figure at Rg = 2 kQ Ic = 200 pA; Vcg =5 V; f = 1 kHz; B = 200 Hz F < 10 dB 39CDIL seyayec RATINGS (at Ta = 25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VcBO max. 32 V Collector-emitter voltage (open base) Ic =2mA VcCEQ max. 32 V Emitter-base voltage (open collector) VEBOQ max. 5.V Collector current (d.c.) Ic max. 100 mA Collector current (peak value) Icm max. 200 mA Total power dissipation up to Tamb = 25 C Prot max. 250 mW Storage temperature Tstg -55 to +150 C Junction temperature T; max. 150 C THERMAL RESISTANCE From junction to ambient* Rthj-a = 500 K/W CHARACTERISTICS T; = 25 C unless otherwise specified Collector cut-off current Tp = 0; Vcp 32 V Icpo < 100 nA Tg = 0; Vcp = 32 V; Tj = 100 C Icpo < 10 pA Baseemitter voltage Ic = 2 mA; VcE=5 V VBE 550 to 700 mV Saturation voltages Ic = 10 mA; lp = 0,5 mA typ. 120 mV VCEsat < 250 mV VpEsat typ. 750 mV Ic. 50 mA; Ip, 2,5 mA VcEsat typ. 210 mV VBEsat typ. 850 mV D.C, current gain BCW31 BCW32_ BCW33 Ic = 10 pA, Veg = 5 V hfe typ. 90 156 | 270 Ic = 2 mA; VcE=5 V hpp > 110 200 | 420 < 220 450__| 800 Collector capacitance at f = 1 MHz Ig'= Ie = 0; Vcp~ 10 V Ce typ. 2,5 pF Transition frequency at f = 35 MHz Ic = 10 mA; VcE =5 V fr typ. 300 MHz Noise figure at Rg = 2 kQ Ic = 200HA; VcE =5 V f =1 kHz; B = 200 Hz F < 10 dB 40