
IRF/B/S/SL3207
2www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.33mH
RG = 25Ω, IAS = 75A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
Stat ic @ TJ = 25°C (unless otherwis e specified)
Symbol Parameter Min. Typ. Max. Units
(BR)DSS Drain-to-S ourc e Breakdown Voltage 75 ––– ––– V
∆
(BR)DSS
∆
J Breakdown Voltage Temp. Coefficient ––– 0.069 ––– V/°C
DS(on) Static D rain-to-Sourc e On-Resistance ––– 3.6 4. 5 mΩ
GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
DSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
GSS Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to- Source Rever se Leakage ––– ––– -200
GGate Input Resistance ––– 1.2 ––– Ωf = 1MHz, open drain
Dynamic @ TJ = 25°C (unles s ot herwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Trans conduct ance 150 ––– ––– S
gTotal Gate Charge ––– 180 260 nC
gs Gate-to- Source Charge ––– 48 –––
gd Gate-t o-Dr ain ("Miller") Charge ––– 68 –––
d(on) Turn-On Delay Time ––– 29 ––– ns
rRise Time ––– 120 –––
d(off) Turn-Off Delay Time ––– 68 –––
fFall Time ––– 74 –––
iss I nput Capaci tance ––– 7600 ––– pF
oss Output Capacitance ––– 710 –––
rss Reverse Transfer Capacitance ––– 390 –––
oss
Effecti ve Output Capacitanc e (Energy Related)
––– 920 –––
oss
Effecti ve Output Capacitanc e (Time Related)
h
––– 1010 –––
Diode Charac teristi cs
Symbol Parameter Min. Typ. Max. Units
SContinuous Sour ce Curr ent ––– ––– 180
c
A
(Body D iode)
SM Pulsed Source Current ––– ––– 720
(Body D iode)
di
SD Diode Forward Voltage ––– ––– 1.3 V
rr Reverse Recovery Time –– – 42 63 n s
J
R
––– 49 74
J
F
rr Rever se Recovery Charge ––– 65 98 nC
J
g
––– 92 140
J
RRM Rever se Recovery Curr ent ––– 2.6 ––– A
J
on Forward Turn-On Time Intrinsic turn-on tim e is negligible (turn- on is dominated by LS+LD)
ID = 75A
RG = 2.6Ω
VGS = 10V
g
VDD = 48V
TJ = 25°C, IS = 75A, VGS = 0V
g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
d
VGS = 10V, ID = 75A
g
VDS = VGS, ID = 250µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing t he
VDS = 60V
Conditions
VGS = 10V
g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
j
, See Fig.11
VGS = 0V, VDS = 0V to 60V
h
, See Fig. 5
Conditions
VDS = 50V, ID = 75A
ID = 75A
VGS = 20V
VGS = -20V