NPN EPITAXIAL PLANAR SILICON TRANSISTORS MPSA 42
MPSA 43
TO-92
CBE
Hi
h Volta
e Transistors.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION SYMBOL MPSA42 MPSA43 UNIT
Collector -Emitter Voltage VCEO 300 200 V
Collector -Base Voltage VCBO 300 200 V
Emitter -Base Voltage VEBO V
Collector Current Continuous IC mA
Power Dissipation @ Ta=25 degC PD mW
Derate above 25 deg C mW./deg C
Power Dissipation @ Tc=25 degC PD W
Derate above 25 deg C mW./deg C
Operating And Storage Junction Tj, Tstg deg C
Temperature Range
THERMAL RESISTANCE
Junction to Case Rth(j-c) deg C/W
Junction to Ambient Rth(j-a) deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MPSA42 MPSA43 UNIT
Collector -Emitter Voltage VCEO IC=1mA,IB=0 >300 >200 V
Collector -Base Voltage VCBO IC=100uA.IE=0 >300 >200 V
Emitter-Base Voltage VEBO IE=100uA, IC=0 >6.0 >6.0 V
Collector-Cut off Current ICBO VCB=200V, IE=0 <100 - nA
VCB=160V, IE=0 - <100 nA
Emitter-Cut off Current IEBO VEB=6V, IC=0 <100 - nA
VEB=4V, IC=0 - <100 nA
DC Current Gain hFE* IC=1mA,VCE=10V >25 >25
IC=10mA,VCE=10V >40 >40
IC=30mA,VCE=10V >40 >40
Collector Emitter Saturation Voltage VCE(Sat)* IC=20mA,IB=2mA <0.5 <0.4 V
Base Emitter Saturation Voltage VBE(Sat) * IC=20mA,IB=2mA <0.9 <0.9 V
DYNAMIC CHARACTERISTICS .
Current Gain-Bandwidth Product ft IC=10mA, VCE=20V >50 >50 MHz
f=100MHz
Collector Base Capacitance Ccb VCB=20V, IE=0 <3.0 <4,0 pF
f=1MHz
*Pulse Test: Pulse Width=300us, Duty Cycle=2%
6
500
625
5
200
1.5
12
-55 to +150
83.3
B
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