4-209
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF640, RF1S640SM UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 200 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 200 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID18
11 A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 72 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD125 W
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS 580 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
STG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10) 200 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA2-4V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA
On-State Drain Current (Note 1) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 18 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 1) rDS(ON) ID = 10A, VGS = 10V (Figures 8, 9) - 0.14 0.18 Ω
Forward Transconductance (Note 1) gfs VDS ≥ 10V, ID = 11A (Figure 12) 6.7 10 - S
Turn-On Delay Time td(ON) VDD = 100V, ID≈18A, RGS = 9.1Ω, RL = 5.4Ω,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-1321ns
Rise Time tr-5077ns
Turn-Off Delay Time td(OFF) -4668ns
Fall Time tf-3554ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID≈ 18A, VDS = 0.8 x Rated BVDSS
(Figure 14) Gate Charge is Essentially Independent
of Operating Temperature
IG(REF) = 1.5mA
-4364nC
Gate to Source Charge Qgs -8-nC
Gate to Drain “Miller” Charge Qgd -22- nC
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 1275 - pF
Output Capacitance COSS - 400 - pF
Reverse Transfer Capacitance CRSS - 100 - pF
Internal Drain Inductance LDMeasured From the
Contact Screw on Tab to
Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 3.5 - nH
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
- 4.5 - nH
Internal Source Inductance LSMeasured From the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
- 7.5 - nH
Thermal Resistance Junction to Case RθJC --1
oC/W
Thermal Resistance Junction to
Ambient RθJA Free Air Operation, IRF640 - - 62 oC/W
RθJA RF1S640SM Mounted on FR-4 Board with
Minimum Mounting Pad --62
oC/W
LS
LD
G
D
S
IRF640, RF1S640SM