2N5609
Features
With TO-66 package
Designed for use as high-frequency drivers in audio amplifier
Absolute Maximum Ratings Tc=25
SYMBOL PARAMETER RATING UNIT
VCBOCollector to base voltage 80 V
VCEOCollector to emitter voltage 80 V
VEBOEmitter to base voltage 5.0 V
ICPPeak collector current A
ICCollector current 5.0 A
PCCollector power dissipation 25 W
TjJunction temperature 150
TstgStorage temperature -55~150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
ICBOCollector-base cut-off current VCB =80V;IE=0 10 A
IEBOEmitter-base cut-off current VEB =5V, IC=0 10 A
ICEOCollector-emitter cut-off current
VCBOCollector-base breakdown voltage
V(BR)CEOCollector-emitter breakdown voltage IC=10mA,IB=0 80 V
VEBOEmitter-base breakdown voltage
VCEsat-1Collector-emitter saturation voltages IC =1A; IB =0.1A 0.5 V
VCEsat-2Collector-emitter saturation voltages
VCEsat-3Collector-emitter saturation voltages
VCEsat-4Collector-emitter saturation voltages
hFE-1Forward current transfer ratio IC=2.5A,VCE=5V 70 200
hFE-2Forward current transfer ratio
hFE-3Forward current transfer ratio
hFE-4Forward current transfer ratio
VBE(sat)1Base-emitter saturation voltages IC=1A,VCE=2V 1.0 V
VBE(sat)2Base-emitter saturation voltages
VBE(sat)3Base-emitter saturation voltages
fTTransition frequency at f = 1MHz
tfFall time
tsTum-off storage time
Electrical Characteristics Tc=25
Silicon PNP Transistors
TO-66
INCHANGE
Power Transistors
