2SA1145
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1145
Audio Frequency Amplifier Applications
• Complementary to 2SC2705.
• Small Collector Output Capacitance: Cob = 2.5 pF (typ.)
• High Transition Frequency: fT = 200 MHz (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO −150 V
Collector-emitter voltage VCEO −150 V
Emitter-base voltage VEBO −5 V
Collector current IC −50 mA
Base current IB −5 mA
Collector power dissipation PC 800 mW
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Electrical Characte ristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = −150 V, IE = 0 ⎯ ⎯ −0.1 µA
Emitter cut-off current IEBO V
EB = −5 V, IC = 0 ⎯ ⎯ −0.1 µA
Collector-emitter breakdown voltage V (BR) CEO IC = −1 mA, IB = 0 −150 ⎯ ⎯ V
DC current gain hFE (Note) VCE = −5 V, IC = −10 mA 80 ⎯ 240
Collector-emitter saturation voltage VCE (sat) I
C = −10 mA, IB = −1 mA ⎯ ⎯ −1.0 V
Base-emitter voltage VBE V
CE = −5 V, IC = −10 mA ⎯ ⎯ −0.8 V
Transition frequency fT V
CE = −5 V, IC = −10 mA ⎯ 200 ⎯ MHz
Collector output capacitance Cob V
CB = −10 V, IE = 0, f = 1 MHz ⎯ 2.5 ⎯ pF
Note: hFE classification O: 80 to 160, Y: 120 to 240
Mark ing
Unit: mm
JEDEC TO-92MOD
JEITA ―
TOSHIBA 2-5J1A
Weight: 0.36 g (typ.)
A1145
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics
indicator
Part No. (or abbreviation code)
2SA1145
2004-07-07
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Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
IC – VCE
Base-emitter voltage VBE (V)
DC current gain hFE
Collector current IC (mA)
hFE – IC
Transition frequency fT (MHz)
Collector current IC (mA)
fT – IC
Collector-emitter saturation voltage
VCE (sat) (V)
Collector current IC (mA)
VCE (sat) – IC
Collector-base voltage VCB (V)
Cob – VCB
Collector output capacitance
Cob (pF)
Common emitter
VCE = −5 V
−50
0
0
−10
−20
−30
−40
−0.2 −0.4 −0.6 −0.8 −1.0 −1.4
Ta = 100°C
25
−1.2
−25
1
−0.5
IE = 0
f = 1 MHz
Ta = 25°C
300
−1 −3 −10 −100
3
5
10
0.3
0
−30
−0.5
Common emitter
Ta = 25°C
−5
VCE = −10V
1000
−1 −3 −10 −30 −100
100
300
3
1
Common emitter
VCE = −5V
10
−0.3
1000
30
100
300
−1 −3 −10 −50
−25
25
Ta = 100°C
−30
Common emitter
Ta = 25°C
0
0
−50
−10
IB = −0.1 mA
−20
−30
−40
−2 −4 −6 −8 −10 −12
−0.2
−14
0
−0.3
−0.5 −0.4
Common emitter
IC/IB = 10
−1
−0.03
−0.3
−0.5
−0.05
−0.1
−0.3
−1 −3 −10 −30 −100
Ta = 100°C
25
−3
−
25
2SA1145
2004-07-07
3
Ambient temperature Ta (°C)
PC – Ta
Collector power dissipation PC (W)
1200
0
0 40 80 120 160
400
800
No heat sink
2SA1145
2004-07-07
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conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
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(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
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and sold, under any law and regulations.
030619EAA
RESTRICTIONS ON PRODUCT USE
