TIP145 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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. . . designed for general–purpose amplifier and low frequency switching applications.

•High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V

•Collector–Emitter Sustaining Voltage — @ 30 mA

VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145

VCEO(sus) = 80 Vdc (Min) — TIP141, TIP146

VCEO(sus) = 100 Vdc (Min) — TIP142, TIP147

•Monolithic Construction with Built–In Base–Emitter Shunt Resistor

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

TIP140

TIP145

ÎÎÎÎ

TIP141

TIP146

ÎÎÎÎ

TIP142

TIP147

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak (1)

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

0.5

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation

@ TC = 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

125

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.0

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Case to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

35.7

ÎÎÎ

C/W

(1) 5 ms,

10% Duty Cycle.

DARLINGTON SCHEMATICS

BASE

EMITTER

COLLECTOR

≈

8.0 k

≈

BASE

EMITTER

COLLECTOR

≈

8.0 k

≈

NPN

TIP140

TIP141

TIP142

PNP

TIP145

TIP146

TIP147

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by TIP140/D

 Motorola, Inc. 1995













10 AMPERE

DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

60–100 VOLTS

125 WATTS

*Motorola Preferred Device





 



CASE 340D–01

     

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mA, IB = 0) TIP140, TIP145

TIP141, TIP146

TIP142, TIP147

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP140, TIP145

(VCE = 40 Vdc, IB = 0) TIP141, TIP146

(VCE = 50 Vdc, IB = 0) TIP142, TIP147

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 V, IE = 0) TIP140, TIP145

(VCB = 80 V, IE = 0) TIP141, TIP146

(VCB = 100 V, IE = 0) TIP142, TIP147

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 V)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2 0

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 5.0 A, VCE = 4.0 V)

(IC = 10 A, VCE = 4.0 V)

ÎÎÎÎ

hFE

ÎÎÎÎ

1000

500

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 5.0 A, IB = 10 mA)

(IC = 10 A, IB = 40 mA)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

2.0

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 10 A, IB = 40 mA)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 10 A, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (See Figure 1)

ÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 V, IC = 5.0 A,

IB = 20 mA, Duty Cycle

2.0%,

IB1 = IB2, RC & RB Varied, TJ = 25

ÎÎÎÎ

—

ÎÎÎÎ

0.15

ÎÎÎÎ

—

ÎÎÎ

µs

ÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 V, IC = 5.0 A,

IB = 20 mA, Duty Cycle

2.0%,

IB1 = IB2, RC & RB Varied, TJ = 25

ÎÎÎÎ

—

ÎÎÎÎ

0.55

ÎÎÎÎ

—

ÎÎÎ

µs

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

IB = 20 mA, Duty Cycle

2.0%,

IB1 = IB2, RC & RB Varied, TJ = 25

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎÎ

—

ÎÎÎ

µs

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

2.0%,

IB1 = IB2, RC & RB Varied, TJ = 25

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎÎ

—

ÎÎÎ

µs

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

2.0%.

Figure 1. Switching Times Test Circuit

0.2

Figure 2. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

5.0

2.0

0.5

0.1 0.5 1.0 3.0 5.0 10 20

0.2

PNP

NPN

td @ VBE(off) = 0

approx

+12 V

appox.

–8.0 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

51 D1

+4.0 V

VCC

–30 V

TUT

≈

8.0 k

≈

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25

For NPN test circuit reverse diode and voltage polarities.

1.0

     

Motorola Bipolar Power Transistor Device Data

VCE(SAT), COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS)

VBE, BASE–EMITTER VOLTAGE (VOLTS)

5000

0.5

Figure 3. DC Current Gain versus Collector Current

IC, COLLECTOR CURRENT (AMPS)

300 1.0 2.0 3.0 5.0 7.0 10

500

hFE, DC CURRENT GAIN

VCE = 4.0 V

4.0

NPN

TIP140, TIP141, TIP142 PNP

TIP145, TIP146, TIP147

Figure 4. Collector–Emitter Saturation Voltage

5.0

–75 TJ, JUNCTION TEMPERATURE (

0.5

IC = 10 A, IB = 4.0 mA

2.0

3.0

4.0

–75

TJ, JUNCTION TEMPERATURE (

–25 25 75 175

3.6

3.2

2.8

2.4

0.8

Figure 5. Base–Emitter Voltage

2000

1000

TJ = 150

C–55

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

TJ, JUNCTION TEMPERATURE (

125

20,000

1000

2000

3000

5000

10,000

7000

1.0

0.7

0.5

VCE(SAT), COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS)

0.5 1.0 2.0 3.0 5.0 7.0 104.00.7

–50 –25 0 25 50 75 100 125 150 175

5.0

–75

2.0

3.0

1.0

0.7

–50 –25 0 25 50 75 100 125 150 175

2.0

1.6

1.2

4.0

–75 –25 25 75 175

3.6

3.2

2.8

2.4

0.8 125

2.0

1.6

1.2

100

TJ = 150

100

–55

VCE = 4.0 V

IC = 5.0 A, IB = 10 mA

IC = 1.0 A, IB = 2.0 mA

IC = 10 A, IB = 4.0 mA

IC = 5.0 A, IB = 10 mA

IC = 1.0 A, IB = 2.0 mA

VCE = 4.0 V

IC = 10 A

5.0 A

1.0 A

VCE = 4.0 V

IC = 10 A

5.0 A

1.0 A

TYPICAL CHARACTERISTICS

     

4 Motorola Bipolar Power Transistor Device Data

ACTIVE–REGION SAFE OPERATING AREA

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 6 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. At high case temper-

atures, thermal limitations will reduce the power that can be

handled to values less than the limitations imposed by

second breakdown.

SECONDARY BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITATION @ TC = 25

Figure 6. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0

IC, COLLECTOR CURRENT (AMP) (mA)

0.2

5.0

1.0

TJ = 150

5030

TIP140, 145

3.0

7.0

15 70 100

TIP141, 146

TIP142, 147

IC, COLLECTOR CURRENT (AMPS)

1.0

2.0

5.0

7.0

Figure 7. Unclamped Inductive Load

L, UNCLAMPED INDUCTIVE LOAD (mH)

0.5 1.0 2.0 5.0 10 20 50 100

100 mJ

INPUT

MPS–U52

RBB1

1.5 k

RBB2

= 100 VBB2 = 0

VBB1 = 10 V

TUT

VCE MONITOR

100 mH

VCC = 20 VIC

MONITOR

RS = 0.1

TEST CIRCUIT

NOTE 1: Input pulse width is increased until ICM = 1.42 A.

NOTE 2: For NPN test circuit reverse polarities.

INPUT

VOLTAGE

COLLECTOR

CURRENT

1.42 A

VCE(sat)

–20 V

COLLECTOR

VOLTAGE

V(BR)CER

≈

7.0 ms (SEE NOTE 1)

5.0 V0

100 ms 0

VOLTAGE AND CURRENT WAVEFORMS

Figure 8. Inductive Load

PD, POWER DISSIPATION (WATTS)

PNP

NPN

Figure 9. Magnitude of Common Emitter

Small–Signal Short–Circuit Forward

Current Transfer Ratio

f, FREQUENCY (MHz)

2.0

1.0

5.0

100

1.0 3.0 5.0

7.0

2.0 7.0 10

VCE = 10 V

IC = 1.0 A

TJ = 25

5.0

4.0

1.0

2.0

3.0

Figure 10. Free–Air Temperature

Power Derating

TA, FREE–AIR TEMPERATURE (

0 40 80 120 160 200

hfe, SMALL–SIGNAL FORWARD CURRENT

TRANSFER RATIO

PNP

NPN

     

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 340D–01

TO–218AC

ISSUE A

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

BQEC

DIM MIN MAX MIN MAX

INCHESMILLIMETERS

A19.00 19.60 0.749 0.771

B14.00 14.50 0.551 0.570

C4.20 4.70 0.165 0.185

D1.00 1.30 0.040 0.051

E1.45 1.65 0.058 0.064

G5.21 5.72 0.206 0.225

H2.60 3.00 0.103 0.118

J0.40 0.60 0.016 0.023

K28.50 32.00 1.123 1.259

L14.70 15.30 0.579 0.602

Q4.00 4.25 0.158 0.167

S17.50 18.10 0.689 0.712

U3.40 3.80 0.134 0.149

V1.50 2.00 0.060 0.078

1 2 3

     

6 Motorola Bipolar Power Transistor Device Data

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TIP140/D

*TIP140/D*

◊