
SEMiX503GD126HDc
© by SEMIKRON Rev. 0 – 16.04.2010 1
SEMiX® 33c
GD
Trench IGBT Modules
SEMiX503GD126HDc
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1200 V
ICTj= 150 °C Tc=25°C 466 A
Tc=80°C 327 A
ICnom 300 A
ICRM ICRM = 2xICnom 600 A
VGES -20 ... 20 V
tpsc
VCC = 600 V
VGE ≤ 20 V
VCES ≤ 1200 V
Tj= 125 °C 10 µs
Tj-40 ... 150 °C
Inverse diode
IFTj= 150 °C Tc=25°C 412 A
Tc=80°C 284 A
IFnom 300 A
IFRM IFRM = 2xIFnom 600 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 2000 A
Tj-40 ... 150 °C
Module
It(RMS) 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=300A
VGE =15V
chiplevel
Tj=25°C 1.7 2.1 V
Tj= 125 °C 22.45V
VCE0 Tj=25°C 11.2V
Tj= 125 °C 0.9 1.1 V
rCE VGE =15V Tj=25°C 2.3 3.0 mΩ
Tj= 125 °C 3.7 4.5 mΩ
VGE(th) VGE=VCE, IC=12mA 5 5.8 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj= 125 °C mA
Cies VCE =25V
VGE =0V
f=1MHz 21.6 nF
Coes f=1MHz 1.13 nF
Cres f=1MHz 0.98 nF
QGVGE =- 8 V...+ 15 V 2400 nC
RGint Tj=25°C 2.50 Ω
td(on) VCC = 600 V
IC=300A
RG on =2.2Ω
RG off =2.2Ω
Tj= 125 °C 275 ns
trTj= 125 °C 55 ns
Eon Tj= 125 °C 28 mJ
td(off) Tj= 125 °C 625 ns
tfTj= 125 °C 125 ns
Eoff Tj= 125 °C 44 mJ
Rth(j-c) per IGBT 0.08 K/W
http://store.iiic.cc/