
IRFB4229PbF
2www.irf.com
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 210 ––– mV/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 38 46 mΩ
VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V
∆VGS(th)/∆TJGate Threshold Voltage Coefficient ––– -14 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 1.0 mA
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 83 ––– ––– S
QgTotal Gate Charge ––– 72 110 nC
Qgd Gate-to-Drain Charge ––– 26 –––
td(on) Turn-On Delay Time ––– 18 –––
trRise Time ––– 31 ––– ns
td(off) Turn-Off Delay Time ––– 30 –––
tfFall Time ––– 21 –––
tst Shoot Through Blocking Time 100 ––– ––– ns
EPULSE Energy per Pulse µJ
Ciss Input Capacitance ––– 4560 –––
Coss Output Capacitance ––– 390 ––– pF
Crss Reverse Transfer Capacitance ––– 100 –––
Coss eff. Effective Output Capacitance ––– 290 –––
LDInternal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
LSInternal Source Inductance ––– 7.5 ––– from package
Avalanche Characteristics
Parameter Units
EAS Single Pulse Avalanche Energy
d
mJ
EAR Repetitive Avalanche Energy
c
mJ
VDS(Avalanche) Repetitive Avalanche Voltage
c
V
IAS Avalanche Current
d
A
Diode Characteristics
Parameter Min. Typ. Max. Units
IS @ TC = 25°C Continuous Source Current ––– –––
(Body Diode) A
ISM Pulsed Source Current ––– –––
(Body Diode)
c
VSD Diode Forward Voltage ––– ––– 1.3 V
trr Reverse Recovery Time ––– 190 290 ns
Qrr Reverse Recovery Charge ––– 840 1260 nC
––– 790 –––
––– 1390 –––
33
26
–––
–––
300 –––
Typ. Max.
ƒ = 1.0MHz,
––– 130
TJ = 25°C, IF = 26A, VDD = 50V
di/dt = 100A/µs
e
TJ = 25°C, IS = 26A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 26A
e
VGS = 0V, VDS = 0V to 200V
VDS = 250V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 0V
L = 220nH, C= 0.3µF, VGS = 15V
VDD = 125V, VGS = 10V
e
ID = 26A
RG = 2.4Ω
VDS = 200V, RG= 4.7Ω, TJ = 100°C
VDS = 25V
VDS = VGS, ID = 250µA
VDS = 250V, VGS = 0V
See Fig. 22
46
180
MOSFET symbol
VDS = 25V, ID = 26A
VDD = 125V, ID = 26A, VGS = 10V
e
Conditions
and center of die contact
VDD = 200V, VGS = 15V, RG= 4.7Ω
VDS = 200V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.3µF, VGS = 15V