PD - 97078A IRFB4229PbF Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for Reliable Operation l Short Fall & Rise Times for Fast Switching l175C Operating Junction Temperature for Improved Ruggedness l Repetitive Avalanche Capability for Robustness and Reliability l Class-D Audio Amplifier 300W-500W (Half-bridge) Key Parameters VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V IRP max @ TC= 100C TJ max 250 300 38 91 175 D V V m: A C D G G S D S TO-220AB G D S Gate Drain Source Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications. Absolute Maximum Ratings Max. Parameter Units VGS Gate-to-Source Voltage 30 V ID @ TC = 25C Continuous Drain Current, VGS @ 10V 46 A ID @ TC = 100C Continuous Drain Current, VGS @ 10V 33 IDM Pulsed Drain Current 180 IRP @ TC = 100C Repetitive Peak Current PD @TC = 25C Power Dissipation 330 PD @TC = 100C Power Dissipation 190 Linear Derating Factor 2.2 W/C TJ Operating Junction and -40 to + 175 C TSTG Storage Temperature Range c g 91 Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw x 300 W x 10lb in (1.1N m) N Thermal Resistance Parameter RJC RCS RJA Junction-to-Case f Case-to-Sink, Flat, Greased Surface Junction-to-Ambient f Typ. --- 0.50 --- Max. 0.45 --- 62 Units C/W Notes through are on page 8 www.irf.com 1 09/10/07 IRFB4229PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient 250 --- --- 210 --- --- VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage --- 3.0 38 --- 46 5.0 VGS(th)/TJ IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current --- --- -14 --- --- 20 IGSS Gate-to-Source Forward Leakage --- --- --- --- 1.0 100 Gate-to-Source Reverse Leakage Forward Transconductance --- 83 --- --- -100 --- Total Gate Charge Gate-to-Drain Charge --- --- 72 26 110 --- Turn-On Delay Time Rise Time --- --- 18 31 --- --- tf tst Turn-Off Delay Time Fall Time Shoot Through Blocking Time --- --- 100 30 21 --- --- --- --- EPULSE Energy per Pulse --- 790 --- --- 1390 --- Input Capacitance --- 4560 --- Output Capacitance Reverse Transfer Capacitance --- --- 390 100 --- --- Effective Output Capacitance Internal Drain Inductance --- --- 290 4.5 --- --- BVDSS VDSS/TJ RDS(on) gfs Qg Qgd td(on) tr td(off) Ciss Coss Crss Coss eff. LD VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 26A e V Internal Source Inductance --- 7.5 VDS = VGS, ID = 250A mV/C A VDS = 250V, VGS = 0V mA VDS = 250V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V S VDS = 25V, ID = 26A VDD = 125V, ID = 26A, VGS = 10V nC e e VDD = 125V, VGS = 10V ns ID = 26A ns See Fig. 22 VDD = 200V, VGS = 15V, RG= 4.7 L = 220nH, C= 0.3F, VGS = 15V RG = 2.4 J pF VDS = 200V, RG= 4.7, TJ = 25C L = 220nH, C= 0.3F, VGS = 15V VDS = 200V, RG= 4.7, TJ = 100C VGS = 0V VDS = 25V = 1.0MHz, VGS = 0V, VDS = 0V to 200V Between lead, nH LS Conditions --- D 6mm (0.25in.) from package and center of die contact G S Avalanche Characteristics Parameter EAS EAR VDS(Avalanche) IAS d Repetitive Avalanche Energy c Repetitive Avalanche Voltagec Avalanche Currentd Single Pulse Avalanche Energy Typ. Max. Units --- 130 mJ --- 300 33 --- mJ --- 26 A V Diode Characteristics Parameter IS @ TC = 25C Continuous Source Current ISM VSD trr Qrr 2 (Body Diode) Pulsed Source Current c Min. Typ. Max. Units --- --- --- --- 46 Conditions MOSFET symbol A 180 (Body Diode) Diode Forward Voltage --- --- 1.3 V Reverse Recovery Time Reverse Recovery Charge --- --- 190 840 290 1260 ns nC showing the integral reverse p-n junction diode. TJ = 25C, IS = 26A, VGS = 0V TJ = 25C, IF = 26A, VDD = 50V e di/dt = 100A/s e www.irf.com IRFB4229PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 100 BOTTOM 10 5.5V 1 0.1 100 5.5V 10 60s PULSE WIDTH Tj = 25C 1 10 BOTTOM 60s PULSE WIDTH Tj = 175C 1 100 0.1 1 VDS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 3.5 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current() 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 TJ = 175C 10 1 TJ = 25C 0.1 VDS = 25V 60s PULSE WIDTH 0.01 4.0 5.0 6.0 7.0 ID = 26A VGS = 10V 3.0 2.5 2.0 1.5 1.0 0.5 0.0 8.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 1600 1400 L = 220nH C = 0.3F 100C 25C 1200 L = 220nH C = Variable 100C 25C 1200 Energy per pulse (J) Energy per pulse (J) VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 800 400 1000 800 600 400 200 0 0 150 160 170 180 190 200 VDS, Drain-to -Source Voltage (V) Fig 5. Typical EPULSE vs. Drain-to-Source Voltage www.irf.com 100 110 120 130 140 150 160 170 ID, Peak Drain Current (A) Fig 6. Typical EPULSE vs. Drain Current 3 IRFB4229PbF 2000 1000 L = 220nH Energy per pulse (J) ISD , Reverse Drain Current (A) C= 0.3F C= 0.2F C= 0.1F 1600 1200 800 400 100 TJ = 175C 10 1 TJ = 25C VGS = 0V 0 25 50 75 100 125 0.1 150 0.2 Temperature (C) Fig 7. Typical EPULSE vs.Temperature 7000 VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 20 Coss = Cds + Cgd 5000 Ciss 4000 3000 Coss 2000 1000 Crss 1 1.0 1.2 ID= 26A VDS = 160V VDS = 100V 16 VDS = 40V 12 8 4 10 100 0 1000 Fig 9. Typical Capacitance vs.Drain-to-Source Voltage ID, Drain-to-Source Current (A) 1000 30 20 10 0 40 60 80 100 120 Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage 50 40 20 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) ID, Drain Current (A) 0.8 0 0 OPERATION IN THIS AREA LIMITED BY R DS(on) 1sec 100 100sec 10sec 10 1 Tc = 25C Tj = 175C Single Pulse 0.1 25 50 75 100 125 150 175 TJ , Junction Temperature (C) Fig 11. Maximum Drain Current vs. Case Temperature 4 0.6 Fig 8. Typical Source-Drain Diode Forward Voltage VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 6000 0.4 VSD, Source-to-Drain Voltage (V) 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area www.irf.com 0.40 EAS, Single Pulse Avalanche Energy (mJ) () RDS (on), Drain-to -Source On Resistance IRFB4229PbF ID = 26A 0.30 0.20 TJ = 125C 0.10 TJ = 25C 600 I D 7.4A 13A BOTTOM 26A TOP 500 400 300 200 100 0.00 0 5 6 7 8 9 10 25 VGS, Gate-to-Source Voltage (V) 100 125 150 175 Fig 14. Maximum Avalanche Energy Vs. Temperature 5.0 140 4.5 120 Repetitive Peak Current (A) VGS(th) Gate threshold Voltage (V) 75 Starting TJ, Junction Temperature (C) Fig 13. On-Resistance Vs. Gate Voltage 4.0 50 ID = 250A 3.5 3.0 2.5 ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse 100 2.0 80 60 40 20 1.5 0 -75 -50 -25 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 Case Temperature (C) TJ , Temperature ( C ) Fig 16. Typical Repetitive peak Current vs. Case temperature Fig 15. Threshold Voltage vs. Temperature Thermal Response ( ZthJC ) 1 D = 0.50 0.1 0.20 0.10 0.05 0.01 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 Ri (C/W) C 2 1 2 Ci= i/Ri Ci= i/Ri 3 3 (sec) 0.080717 0.000052 0.209555 0.001021 0.159883 0.007276 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB4229PbF Driver Gate Drive D.U.T + - - * RG * * * * *** D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + V DD ** + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for HEXFET(R) Power MOSFETs V(BR)DSS 15V D.U.T RG VGS 20V DRIVER L VDS tp + V - DD IAS tp A 0.01 I AS Fig 19a. Unclamped Inductive Test Circuit Fig 19b. Unclamped Inductive Waveforms Id Vds Vgs L DUT 0 VCC 1K Vgs(th) Qgs1 Qgs2 Fig 20a. Gate Charge Test Circuit 6 Qgd Qgodr Fig 20b. Gate Charge Waveform www.irf.com IRFB4229PbF A PULSE A RG C DRIVER L PULSE B VCC B Ipulse RG tST DUT Fig 21b. tst Test Waveforms Fig 21a. tst and EPULSE Test Circuit Fig 21c. EPULSE Test Waveforms V DS V GS RG RD VDS 90% D.U.T. + -V DD VGS Pulse Width 1 s Duty Factor 0.1 % Fig 22a. Switching Time Test Circuit www.irf.com 10% VGS td(on) tr t d(off) tf Fig 22b. Switching Time Waveforms 7 IRFB4229PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5) /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 '$7(&2'( <($5 :((. /,1(& TO-220AB packages are not recommended for Surface Mount Application. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.37mH, RG = 25, IAS = 26A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Half sine wave with duty cycle = 0.25, ton=1sec. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2007 8 www.irf.com