TSM2302
20V N-Channel MOSFET
1/6
Version: C15
SO
T
-
23
Key Parameter Performance
Parameter Value Unit
V
DS
20 V
R
DS(on)
(max)
V
GS
= 4.5V 65 mΩ
V
GS
= 2.5V 95
Q
g
5.4 nC
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package
Packing
TSM2302CX RF SOT-23 3kpcs / 7” Reel
TSM2302CX RFG SOT-23 3kpcs / 7” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which
contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds
Absolute Maximum Ratings
(T
C
= 25°C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
20 V
Gate-Source Voltage V
GS
±8 V
Continuous Drain Current I
D
2.8 A
Pulsed Drain Current
(Note 1)
I
DM
8 A
Continuous Source Current (Diode Conduction)
(Note 2)
I
S
1.6 A
Maximum Power Dissipation Ta = 25°C P
D
1.25 W
Ta = 75°C 0.8
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance Junction to Foot R
ӨJF
75 °C/W
Thermal Resistance Junction to Ambient R
ӨJA
145 °C/W
N-Channel MOSFET
Pin
Definition
:
1. Gate
2. Source
3. Drain
TSM2302
20V N-Channel MOSFET
2/6
Version: C15
Electrical Specifications
Parameter Conditions Symbol
Min Typ Max Unit
Static
(Note 3)
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
0.65 0.95 1.2 V
Gate Body Leakage V
GS
= ±8V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
= 16V, V
GS
= 0V I
DSS
-- -- 1.0 μA
On-State Drain Current V
DS
= 5V, V
GS
= 4.5V I
D(ON)
6 -- -- A
Drain-Source On-State Resistance V
GS
= 4.5V, I
D
= 2.8A R
DS(ON)
-- 40 65 mΩ
V
GS
= 2.5V, I
D
= 2.0A -- 50 95
Forward Transconductance V
DS
= 5V, I
D
= 2.8A g
fs
-- 10 -- S
Diode Forward Voltage I
S
= 1.6A, V
GS
= 0V V
SD
-- 0.76 1.2 V
Dynamic
(Note 4)
Total Gate Charge V
DS = 10V, ID = 2.8A,
VGS = 4.5V
Q
g
-- 5.4 10
nC
Gate-Source Charge Q
gs
--
0.65 --
Gate-Drain Charge Q
gd
--
1.4 --
Input Capacitance V
DS = 10V, VGS = 0V,
f = 1.0MHz
C
iss
-- 340 --
pF
Output Capacitance C
oss
--
115 --
Reverse Transfer Capacitance C
rss
--
33 --
Switching
(Note 5)
Turn-On Delay Time V
DD = 6V, RL = 10Ω,
ID = 1A, VGEN = 4.5V,
RG = 6Ω
t
d(on)
-- 12 25
ns
Turn-On Rise Time t
r
-- 36 60
Turn-Off Delay Time t
d(off)
-- 34 60
Turn-Off Fall Time t
f
-- 10 25
Notes:
1. Pulse width limited by the maximum junction temperature
2. Surface Mounted on FR4 Board t ≤ 5 sec.
3. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
4. For DESIGN AID ONLY, not subject to production testing.
5. Switching time is essentially independent of operating temperature.
TSM2302
20V N-Channel MOSFET
3/6
Version: C15
Electrical Characteristics Curve
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM2302
20V N-Channel MOSFET
4/6
Version: C15
Electrical Characteristics Curve
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
TSM2302
20V N-Channel MOSFET
5/6
Version: C15
SOT-23 Mechanical Drawing
Unit: Millimeters
Marking Diagram
02
= Device Code
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
TSM2302
20V N-Channel MOSFET
6/6
Version: C15
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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