MCP111/112 Micropower Voltage Detector Package Types * Ultra-low supply current: 1.75 A (max.) * Precision monitoring options of: - 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V, 4.38V and 4.63V * Resets microcontroller in a power-loss event * Active-low VOUT pin: - MCP111 active-low, open-drain - MCP112 active-low, push-pull * Available in SOT23-3, TO-92, SC-70 and SOT-89-3 packages * Temperature Range: - Extended: -40C to +125C (except MCP1XX-195) - Industrial: -40C to +85C (MCP1XX-195 only) * Pb-free devices 3-Pin SOT23-3/SC-70 VOUT 1 VSS 2 3-Pin SOT-89 VDD MCP111/112 Features 3 VDD MCP111/112 1 2 3 VOUT VDD VSS 3-Pin TO-92 VOUT VDD VSS Applications * Critical Microcontroller and Microprocessor Power-Monitoring Applications * Computers * Intelligent Instruments * Portable Battery-Powered Equipment Block Diagram VDD Comparator + Description - The MCP111/112 are voltage-detecting devices designed to keep a microcontroller in reset until the system voltage has stabilized at the appropriate level for reliable system operation. These devices also operate as protection from brown-out conditions when the system supply voltage drops below the specified threshold voltage level. Eight different trip voltages are available. TABLE 1: VOUT Band Gap Reference VSS DEVICE FEATURES Output Device Type MCP111 Output Driver Open-drain Pull-up Resistor External Reset Delay (typ) No Package Pin Out (Pin # 1, 2, 3) Comment VOUT, VSS, VDD MCP112 Push-pull No No VOUT, VSS, VDD MCP102 Push-pull No 120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet (DS21906) MCP103 Push-pull No 120 ms VSS, RST, VDD See MCP102/103/121/131 Data Sheet (DS21906) MCP121 Open-drain External 120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet (DS21906) MCP131 Open-Drain Internal (~95 k) 120 ms RST, VDD, VSS See MCP102/103/121/131 Data Sheet (DS21906) 2004-2013 Microchip Technology Inc. DS21889E-page 1 MCP111/112 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0V Input current (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA Output current (RST) . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA Rated Rise Time of VDD . . . . . . . . . . . . . . . . . . . . . . 100V/s All inputs and outputs (except RST) w.r.t. VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.6V to (VDD + 1.0V) RST output w.r.t. VSS . . . . . . . . . . . . . . . . . . . -0.6V to 13.5V Storage temperature . . . . . . . . . . . . . . . . . . . 65C to + 150C Ambient temp. with power applied . . . . . . . -40C to + 125C Maximum Junction temp. with power applied . . . . . . . . 150C ESD protection on all pins 2 kV DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111), TA = -40C to +125C. Parameters Sym Min Typ Max Units 5.5 V Conditions Operating Voltage Range VDD 1.0 -- Specified VDD Value to VOUT low VDD 1.0 -- Operating Current IDD -- <1 1.75 A VTRIP 1.872 1.900 1.929 V 1.853 1.900 1.948 V TA = -40C to +85C (Note 2) 2.285 2.320 2.355 V TA = +25C (Note 1) 2.262 2.320 2.378 V Note 2 2.591 2.630 2.670 V TA = +25C (Note 1) 2.564 2.630 2.696 V Note 2 2.857 2.900 2.944 V TA = +25C (Note 1) 2.828 2.900 2.973 V Note 2 2.886 2.930 2.974 V TA = +25C (Note 1) 2.857 2.930 3.003 V Note 2 3.034 3.080 3.126 V TA = +25C (Note 1) 3.003 3.080 3.157 V Note 2 4.314 4.380 4.446 V TA = +25C (Note 1) 4.271 4.380 4.490 V Note 2 4.561 4.630 4.700 V TA = +25C (Note 1) 4.514 4.630 4.746 V Note 2 -- 100 -- ppm/ C VDD Trip Point MCP1XX-195 MCP1XX-240 MCP1XX-270 MCP1XX-290 MCP1XX-300 MCP1XX-315 MCP1XX-450 MCP1XX-475 VDD Trip Point Tempco Note 1: 2: 3: 4: TTPCO V I RST = 10 A, V RST < 0.2V TA = +25C (Note 1) Trip point is 1.5% from typical value. Trip point is 2.5% from typical value. This specification allows this device to be used in PIC(R) microcontroller applications that require the In-Circuit Serial ProgrammingTM (ICSPTM) feature (see device-specific programming specifications for voltage requirements). This specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (VOUT). The total time that the VOUT pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the VOUT pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0C to 70C (+25C preferred). For additional information, please refer to Figure 2-28. This parameter is established by characterization and is not 100% tested. DS21889E-page 2 2004-2013 Microchip Technology Inc. MCP111/112 DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111), TA = -40C to +125C. Parameters Threshold Hysteresis min. = 1%, max = 6%) MCP1XX-195 Sym Min Typ VHYS Max Units 0.019 -- 0.114 V MCP1XX-240 0.023 -- 0.139 V MCP1XX-270 0.026 -- 0.158 V MCP1XX-290 0.029 -- 0.174 V MCP1XX-300 0.029 -- 0.176 V MCP1XX-315 0.031 -- 0.185 V MCP1XX-450 0.044 -- 0.263 V MCP1XX-475 0.046 -- 0.278 V Conditions TA = +25C VOUT Low-level Output Voltage VOL -- -- 0.4 V IOL = 500 A, VDD = VTRIP(MIN) VOUT High-level Output Voltage VOH VDD - 0.6 -- -- V IOH = 1 mA, For only MCP112 (push-pull output) Open-drain High Voltage on Output VODH -- -- 13.5 (3) V MCP111 only, VDD = 3.0V, Time voltage > 5.5V applied 100s, current into pin limited to 2 mA, +25C operation recommended Note 3, Note 4 Open-drain Output Leakage Current (MCP111 only) IOD -- 0.1 -- A Note 1: 2: 3: 4: Trip point is 1.5% from typical value. Trip point is 2.5% from typical value. This specification allows this device to be used in PIC(R) microcontroller applications that require the In-Circuit Serial ProgrammingTM (ICSPTM) feature (see device-specific programming specifications for voltage requirements). This specification DOES NOT allow a continuous high voltage to be present on the open-drain output pin (VOUT). The total time that the VOUT pin can be above the maximum device operational voltage (5.5V) is 100 sec. Current into the VOUT pin should be limited to 2 mA. It is recommended that the device operational temperature be maintained between 0C to 70C (+25C preferred). For additional information, please refer to Figure 2-28. This parameter is established by characterization and is not 100% tested. 2004-2013 Microchip Technology Inc. DS21889E-page 3 MCP111/112 VTRIP 1V VDD tRPU tRPD VOH 1V VOL VOUT tRT FIGURE 1-1: Timing Diagram. AC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111), TA = -40C to +125C. Parameters Sym Min Typ Max Units VDD Detect to VOUT Inactive tRPU -- 90 -- s Figure 1-1 and CL = 50 pF (Note 1) VDD Detect to VOUT Active tRPD -- 130 -- s VDD ramped from VTRIP(MAX) + 250 mV down to VTRIP(MIN) - 250 mV, per Figure 1-1, CL = 50 pF (Note 1) tRT -- 5 -- s For VOUT 10% to 90% of final value per Figure 1-1, CL = 50 pF (Note 1) VOUT Rise Time After VOUT Active Note 1: Conditions These parameters are for design guidance only and are not 100% tested. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111), TA = -40C to +125C. Parameters Sym Min Typ Max Units Conditions Specified Temperature Range TA -40 -- +85 C MCP1XX-195 Specified Temperature Range TA -40 -- +125 C Except MCP1XX-195 Temperature Ranges Maximum Junction Temperature TJ -- -- +150 C Storage Temperature Range TA -65 -- +150 C Thermal Resistance, 3L-SOT23 JA -- 336 -- C/W Thermal Resistance, 3L-SC-70 JA -- 340 -- C/W Thermal Resistance, 3L-TO-92 JA -- 131.9 -- C/W Thermal Resistance, 3L-SOT-89 JA -- 110 -- C/W Package Thermal Resistances DS21889E-page 4 2004-2013 Microchip Technology Inc. MCP111/112 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111; see Figure 4-1), TA = -40C to +125C. 1.6 1.6 MCP111-195 5.5V 5.0V 1.4 1.2 1.2 4.0V 1 0.8 IDD (uA) IDD (uA) MCP111-195 1.4 2.8V 2.1V 1.7V 0.6 0.4 +85C 0.8 0.6 -40C 0.4 1.0V 0.2 +125C 1 +25C 0.2 0 140 120 100 80 60 40 20 0 -20 -40 0 1.0 2.0 3.0 FIGURE 2-1: (MCP111-195). 1.2 4.0 5.0 6.0 VDD (V) Temperature (C) FIGURE 2-4: IDD vs. Temperature 1.6 5.5V MCP112-300 1 5.0V 0.8 4.0V 0.6 2.8V 1.7V IDD vs. VDD (MCP111-195). MCP112-300 1.4 0.4 IDD (uA) IDD (uA) 1.2 2.1V 1 +125C 0.8 +85C 0.6 -40C 0.4 0.2 1.0V 0.2 0 +25C 140 120 100 80 60 40 20 0 -20 -40 0 1.0 2.0 3.0 6.0 1.6 MCP112-475 1.4 5.5V MCP112-475 2.1V 2.8V 1.7V IDD (uA) 1.2 4.0V 5.0V 1 0.8 +125C 0.6 +85C 0.4 -40C 0.2 1.0V +25C 140 120 100 80 60 40 20 0 -20 0 -40 IDD (uA) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 5.0 IDD vs. VDD (MCP112-300). FIGURE 2-5: IDD vs. Temperature FIGURE 2-2: (MCP112-300). 4.0 VDD (V) Temperature (C) 1.0 IDD vs. Temperature 2004-2013 Microchip Technology Inc. 3.0 4.0 5.0 6.0 VDD (V) Temperature (C) FIGURE 2-3: (MCP112-475). 2.0 FIGURE 2-6: IDD vs. VDD (MCP112-475). DS21889E-page 5 MCP111/112 Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111; see Figure 4-1), TA = -40C to +125C. 0.100 MCP111-195 VDD = 1.7V 0.080 VOL (V) 0.050 VTRIP, V increasing 0.045 0.040 VHYS, Hysteresis 0.035 0.030 MCP111-195 0.025 max temp is 0.020 +85C 0.015 VTRIP, V decreasing 0.010 0.005 0.000 -60 -10 40 90 140 Hyst (V) VTRIP (V) 0.120 1.950 1.945 1.940 1.935 1.930 1.925 1.920 1.915 1.910 1.905 1.900 1.895 +125C 0.060 +85C 0.040 -40C 0.020 +25C 0.000 0.00 0.25 Temperature (C) 0.50 0.75 1.00 IOL (mA) FIGURE 2-10: VOL vs. IOL (MCP111-195 @ VDD = 1.7V). FIGURE 2-7: VTRIP and VHYST vs. Temperature (MCP111-195). 0.080 3.020 VTRIP (V) 3.000 VHYS, Hysteresis 2.980 MCP112-300 2.960 2.940 2.920 VTRIP, V decreasing 2.900 -60 -10 40 90 0.100 0.098 0.096 0.094 0.092 0.090 0.088 0.086 0.084 0.082 140 0.070 MCP112-300 VDD = 2.7V 0.060 VOL (V) VTRIP, V increasing Hyst (V) 3.040 0.050 +125C 0.040 +85C 0.030 0.020 -40C +25C 0.010 0.000 0.00 0.25 0.050 0.180 VTRIP, V increasing 0.170 0.160 0.150 0.140 MCP112-475 0.130 0.120 20 60 100 0.100 140 Temperature (C) FIGURE 2-9: VTRIP and VHYST vs. Temperature (MCP112-475). DS21889E-page 6 1.00 MCP112-475 VDD = 4.4V +125C 0.030 0.020 +85C -40C 0.010 +25C 0.110 VTRIP, V decreasing -20 0.040 VOL (V) VHYS, Hysteresis -60 0.75 FIGURE 2-11: VOL vs. IOL (MCP112-300 @ VDD = 2.7V). Hyst (V) VTRIP (V) FIGURE 2-8: VTRIP and VHYST vs. Temperature (MCP112-300). 4.800 4.780 4.760 4.740 4.720 4.700 4.680 4.660 4.640 4.620 4.600 4.580 0.50 IOL (mA) Temperature (C) 0.000 0.00 0.25 0.50 0.75 1.00 IOL (mA) FIGURE 2-12: VOL vs. IOL (MCP112-475 @ VDD = 4.4V). 2004-2013 Microchip Technology Inc. MCP111/112 Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111; see Figure 4-1), TA = -40C to +125C. 0.120 MCP111-195 VDD = 1.7 V 0.100 VOH (V) IOL = 0.50 mA 0.060 0.040 MCP112-300 VDD = 3.1V 3.100 IOL = 0.75 mA 0.080 VOL (V) 3.150 IOL = 1.00 mA -40 C 3.050 +25 C 3.000 IOL = 0.25 mA +85 C 2.950 0.020 IOL = 0.00 mA +125 C 0.000 -40 0 40 80 2.900 0.00 120 0.25 Temperature (C) 0.080 4.820 MCP112-300 VDD = 2.7V 4.800 IOL = 0.50 mA 0.030 VOH (V) VOL (V) 4.780 IOL = 0.75 mA 0.050 0.040 IOL = 0.25 mA 0.020 0.010 80 -40 C 4.740 +85 C 4.700 +125 C 0.000 40 +25 C 4.760 4.720 IOL = 0.00 mA 0 4.680 0.00 120 0.25 Temperature (C) 0.030 IOL = 0.50 mA 0.020 IOL = 0.25 mA 0.010 IOL = 0.00 mA 0.000 40 80 120 Transient Duration (s) VOL (V) IOL = 0.75 mA 0 500 400 1 10 MCP111-195 MCP112-300 300 200 MCP112-475 100 0 0.001 Temperature (C) FIGURE 2-15: VOL vs. Temperature (MCP112-475 @ VDD = 4.4V). 2004-2013 Microchip Technology Inc. 1.00 600 0.040 -40 0.75 FIGURE 2-17: VOH vs. IOH (MCP112-475 @ VDD = 4.8V). IOL = 1.00 mA MCP112-475 VDD = 4.4V 0.50 IOL (mA) FIGURE 2-14: VOL vs. Temperature (MCP112-300 @ VDD = 2.7V). 0.050 1.00 MCP112-475 VDD = 4.8V IOL = 1.00 mA 0.060 -40 0.75 FIGURE 2-16: VOH vs. IOH (MCP112-300 @ VDD = 3.1V). FIGURE 2-13: VOL vs. Temperature (MCP111-195 @ VDD = 1.7V). 0.070 0.50 IOL (mA) 0.01 0.1 VTRIP(min) - VDD FIGURE 2-18: (25 C). Typical Transient Response DS21889E-page 7 MCP111/112 Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111; see Figure 4-1), TA = -40C to +125C. 400 350 350 VDD decreasing from: VTRIP(max) + 0.25V to VTRIP(min) - 0.25V 200 150 tRPU (s) 300 250 tRPD (s) MCP111-195 MCP111-195 VDD decreasing from: 5V - 1.7V 300 100 200 150 VDD increasing from: 0V - 2.8V 100 VDD decreasing from: 5V - 0V 50 VDD increasing from: 0V - 2.1V 250 50 0 VDD increasing from: 0V - 5.5V 0 -40 -15 10 35 60 85 -40 110 -15 Temperature (C) FIGURE 2-19: (MCP111-195). tRPD vs. Temperature FIGURE 2-22: (MCP111-195). VDD decreasing from: VTRIP(max) + 0.25V to VTRIP(min) - 0.25V 140 85 110 tRPU vs. Temperature MCP112-300 100 100 tRPU (s) tRPD (s) 60 VDD increasing from: 0V - 3.1V 120 120 VDD decreasing from: 5V - 2.7V 80 60 VDD increasing from: 0V - 3.3V 80 60 VDD increasing from: 0V - 4.0V 40 40 VDD decreasing from: 5V - 0V 20 0 VDD increasing from: 0V - 5.5V 0 -40 -15 10 35 60 85 110 -40 -15 Temperature (C) FIGURE 2-20: (MCP112-300). tRPD vs. Temperature FIGURE 2-23: (MCP112-300). 250 10 35 60 Temperature (C) 85 110 tRPU vs. Temperature 250 MCP112-475 MCP112-475 VDD increasing from: 0V - 4.9V 200 tRPU (s) VDD decreasing from: 5V - 4.4V 200 tRPD (s) 35 140 MCP112-300 150 100 10 Temperature (C) 160 20 VDD increasing from: 0V - 4.0V VDD decreasing from: VTRIP(max) + 0.25V to VTRIP(min) - 0.25V 150 VDD increasing from: 0V - 5.0V 100 VDD increasing from: 0V - 5.5V 50 50 VDD decreasing from: 5V - 0V 0 0 -40 -15 FIGURE 2-21: (MCP112-475). DS21889E-page 8 10 35 60 Temperature (C) 85 110 tRPD vs. Temperature -40 -15 10 35 60 85 110 Temperature (C) FIGURE 2-24: (MCP112-475). tRPU vs. Temperature 2004-2013 Microchip Technology Inc. MCP111/112 Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 k (only MCP111; see Figure 4-1), TA = -40C to +125C. 0.1500 60 55 0.1400 VDD increasing from: 0V - 2.1V 45 VDD increasing from: 0V - 5.5V 40 VDD increasing from: 0V - 4.0V 35 0.1200 VDD increasing from: 0V - 4.9V 0.1100 0.1000 30 VDD increasing from: 0V - 2.8V 25 VDD increasing from: 0V - 5.5V 0.0900 20 VDD increasing from: 0V - 4.8V 0.0800 -40 -15 10 35 60 85 110 -40 -15 10 Temperature (C) 0.4 0.35 0.3 FIGURE 2-27: (MCP112-475). tRT vs. Temperature VDD increasing from: 0V - 3.1V VDD increasing from: 0V - 3.3V 0.25 0.2 VDD increasing from: 0V - 5.5V 0.15 VDD increasing from: 0V - 4.0V 0.1 0.05 MCP112-300 0 -40 -15 10 35 60 85 Temperature (C) FIGURE 2-26: (MCP112-300). tRT vs. Temperature 2004-2013 Microchip Technology Inc. 35 60 85 110 Temperature (C) 110 tRT vs. Temperature 1.E-02 10m 1.E-03 1m 1.E-04 100 1.E-05 10 1.E-06 1 1.E-07 100n 1.E-08 10n 1.E-09 1n 1.E-10 100p 1.E-11 10p 1.E-12 1p 1.E-13 100f Open-Drain Leakage (A) FIGURE 2-25: (MCP111-195). tRT (s) VDD increasing from: 0V - 5.0V 0.1300 tRT (s) 50 tRT (s) MCP112-475 MCP111-195 125C 25C - 40C 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Pull-Up Voltage (V) FIGURE 2-28: Open-Drain Leakage Current vs. Voltage Applied to VOUT Pin (MCP111-195). DS21889E-page 9 MCP111/112 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. Symbol SOT-23-3 SC-70 SOT-89-3 T0-92 1 1 1 VOUT Function Output State VDD Falling: H = VDD > VTRIP L = VDD < VTRIP VDD Rising: H = VDD > VTRIP + VHYS L = VDD < VTRIP + VHYS 2 2 3 -- DS21889E-page 10 3 VSS Ground reference 3 2 VDD Positive power supply 4 -- VDD Positive power supply 2004-2013 Microchip Technology Inc. MCP111/112 4.0 APPLICATION INFORMATION 4.1 For many of today's microcontroller applications, care must be taken to prevent low-power conditions that can cause many different system problems. The most common causes are brown-out conditions, where the system supply drops below the operating level momentarily. The second most common cause is when a slowly decaying power supply causes the microcontroller to begin executing instructions without sufficient voltage to sustain SRAM, thus producing indeterminate results. Figure 4-1 shows a typical application circuit. VDD 3 0.1 F VTRIP Operation The voltage trip point (VTRIP) is determined on the falling edge of VDD. The actual voltage trip point (VTRIPAC) will be between the minimum trip point (VTRIPMIN) and the maximum trip point (VTRIPMAX). There is a hysteresis on this trip point to remove any "jitter" that would occur on the VOUT pin when the device VDD is at the trip point. Figure 4-2 shows the state of the VOUT pin as determined by the VDD voltage. The VTRIP specification is for falling VDD voltages. When the VDD voltage is rising, the VOUT pin will not be driven high until VDD is at VTRIP + VHYS. VDD VDD RPU MCP11X (1) VOUT 1 VSS PIC(R) Microcontroller MCLR (Reset Input) GND 2 Note 1: RPU may be required with the MCP111 due to the open-drain output. Resistor RPU is not required with the MCP112. FIGURE 4-1: VDD Typical Application Circuit. VTRIPAC + VHYSAC VTRIPMAX VTRIPAC VTRIPMIN VTRIPAC 1V VOUT < 1 V is outside the device specifications FIGURE 4-2: VOUT Operation as Determined by the VTRIP and VHYS. 2004-2013 Microchip Technology Inc. DS21889E-page 11 MCP111/112 4.2 Negative Going VDD Transients The minimum pulse width (time) required to cause a reset may be an important criteria in the implementation of a Power-on Reset (POR) circuit. This time is referred to as transient duration, defined as the amount of time needed for these supervisory devices to respond to a drop in VDD. The transient duration time is dependant on the magnitude of VTRIP - VDD. Generally speaking, the transient duration decreases with increases in VTRIP - VDD. Figure 4-3 shows a typical transient duration vs. reset comparator overdrive for which the MCP111/112 will not generate a reset pulse. It shows that the farther below the trip point the transient pulse goes, the duration of the pulse required to cause a reset gets shorter. Figure 2-18 shows the transient response characteristics for the MCP111/112. A 0.1 F bypass capacitor, mounted as close as possible to the VDD pin, provides additional transient immunity (refer to Figure 4-1). 4.3 Effect of Temperature on Time-out Period (tRPU) The time-out period (tRPU) determines how long the device remains in the reset condition. This is affected by both VDD and temperature. The graph shown in Figures 2-22, 2-23 and 2-24 show the typical response for different VDD values and temperatures. Using in PIC(R) Microcontroller ICSPTM Applications (MCP111 only) 4.4 Figure 4-4 shows the typical application circuit for using the MCP111 for voltage supervisory function when the PIC microcontroller will be programmed via the In-Circuit Serial ProgrammingTM (ICSP) feature. Additional information is available in TB087, "Using Voltage Supervisors with PIC(R) Microcontroller Systems which Implement In-Circuit Serial ProgrammingTM", DS91087. Note: Supply Voltage 5V 0V It is recommended that the current into the RST pin be current limited by a 1 k resistor. VTRIP(MAX) VTRIP(MIN) VDD/VPP VTRIP(MIN) - VDD 0.1 F tTRANS Time (s) FIGURE 4-3: Example of Typical Transient Duration Waveform. RPU VDD MCP111 RST VSS 1 k VDD PIC(R) MCU MCLR (reset input) (Active-Low) VSS FIGURE 4-4: Typical Application Circuit for PIC(R) Microcontroller with the ICSPTM feature. DS21889E-page 12 2004-2013 Microchip Technology Inc. MCP111/112 5.0 PACKAGING INFORMATION 5.1 Package Marking Information Example: 3-Lead TO-92 XXXXXX XXXXXX XXXXXX YWWNNN MCP111 290E TO^^ e3 547256 3-Pin SOT-23 Example: Part Number XXNN SOT-23 SOT-23 MCP111T-195I/TT MPNN MCP112T-195I/TT MRNN MCP111T-240ETT MQNN MCP112T-240ETT MSNN MCP111T-270E/TT MGNN MCP112T-270E/TT MANN MCP111T-290E/TT NHNN MCP112T-290E/TT MBNN MCP111T-300E/TT MJNN MCP112T-300E/TT MCNN MCP111T-315E/TT MKNN MCP112T-315E/TT MDNN MCP111T-450E/TT MLNN MCP112T-450E/TT MENN MCP111T-475E/TT MMNN MCP112T-475E/TT MFNN 3-Pin SOT-89 Example: XXYYWW NNN Legend: XX...X Y WW NNN e3 * Note: Part Number Part Number SOT-89 Part Number SOT-89 MCP111T-195I/MB MP MCP112T-195I/MB MR MCP111T-240EMB MQ MCP112T-240EMB MS MCP111T-270E/MB MG MCP112T-270E/MB MA MCP111T-290E/MB NH MCP112T-290E/MB MB MCP111T-300E/MB MJ MCP112T-300E/MB MC MCP111T-315E/MB MK MCP112T-315E/MB MD MCP111T-450E/MB ML MCP112T-450E/MB ME MCP111T-475E/MB MM MCP112T-475E/MB MF Customer-specific information Year code (last digit of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2004-2013 Microchip Technology Inc. DS21889E-page 13 MCP111/112 Package Marking Information (Continued) 3-Pin SC-70 Example: Part Number XXN Top Side SC-70 Part Number SC-70 MCP111T-195I/LB EPN MCP112T-195I/LB ERN MCP111T-240E/LB EQN MCP112T-240E/LB ESN MCP111T-270E/LB EGN MCP112T-270E/LB EAN MCP111T-290E/LB EHN MCP112T-290E/LB EBN MCP111T-300E/LB EJN MCP112T-300E/LB ECN MCP111T-315E/LB EKN MCP112T-315E/LB EDN MCP111T-450E/LB ELN MCP112T-450E/LB EEN MCP111T-475E/LB EMN MCP112T-475E/LB EFN OR Example: Part Number XXNN Top Side DS21889E-page 14 SC-70 Part Number SC-70 MCP111T-195I/LB EPNN MCP112T-195I/LB ERNN MCP111T-240E/LB EQNN MCP112T-240E/LB ESNN MCP111T-270E/LB EGNN MCP112T-270E/LB EANN MCP111T-290E/LB EHNN MCP112T-290E/LB EBNN MCP111T-300E/LB EJNN MCP112T-300E/LB ECNN MCP111T-315E/LB EKNN MCP112T-315E/LB EDNN MCP111T-450E/LB ELNN MCP112T-450E/LB EENN MCP111T-475E/LB EMNN MCP112T-475E/LB EFNN 2004-2013 Microchip Technology Inc. MCP111/112 3-Lead Plastic Small Outline Transistor (MB) (SOT89) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging H E B1 3 B D D1 p1 2 p R 1 B1 L E1 A C Pitch Outside lead pitch (basic) Overall Height Overall Width Molded Package Width at Base Molded Package Width at Top Overall Length Tab Length Tab Corner Radii Foot Length Lead Thickness Lead 2 Width Leads 1 & 3 Width Units Dimension Limits p p1 A H E E1 D D1 R L c B B1 INCHES MIN MAX .059 BSC .118 BSC .055 .063 .155 .167 .090 .102 .084 .090 .173 .181 .064 .072 .010 .035 .047 .014 .017 .017 .022 .014 .019 MILLIMETERS* MIN MAX 1.50 BSC 3.00 BSC 1.40 1.60 3.94 4.25 2.29 2.60 2.13 2.29 4.40 4.60 1.62 1.83 0.254 0.89 1.20 0.35 0.44 0.43 0.56 0.36 0.48 *Controlling Parameter Notes: Dimensions D and E1 do not include mold or flash protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side. JEDEC Equivalent: TO-243 Drawing No. C04-29 2004-2013 Microchip Technology Inc. Revised 07-24-03 DS21889E-page 15 MCP111/112 3-Lead Plastic Small Outline Transistor (TT) (SOT-23) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E E1 2 B p1 n D p 1 c A A2 A1 L Units Dimension Limits n p Number of Pins Pitch Outside lead pitch (basic) Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter Significant Characteristic MIN p1 A A2 A1 E E1 D L c B .035 .035 .000 .083 .047 .110 .014 0 .004 .015 0 0 INCHES* NOM 3 .038 .076 .040 .037 .002 .093 .051 .115 .018 5 .006 .017 5 5 MAX .044 .040 .004 .104 .055 .120 .022 10 .007 .020 10 10 MILLIMETERS NOM 3 0.96 1.92 0.89 1.01 0.88 0.95 0.01 0.06 2.10 2.37 1.20 1.30 2.80 2.92 0.35 0.45 0 5 0.09 0.14 0.37 0.44 0 5 0 5 MIN MAX 1.12 1.02 0.10 2.64 1.40 3.04 0.55 10 0.18 0.51 10 10 Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: TO-236 Drawing No. C04-104 DS21889E-page 16 2004-2013 Microchip Technology Inc. MCP111/112 3-Lead Plastic Small Outline Transistor (LB) (SC-70) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E E1 2 B p1 3 D p 1 a A2 A c b A1 L Units Dimension Limits Number of Pins Pitch Outside lead pitch (basic) Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom p p1 A A2 A1 E E1 D L c B a b INCHES MIN 3 .026 BSC. .051 BSC. .031 .031 .000 .071 .045 .071 .004 .003 .006 8 8 MAX .043 .039 .0004 .094 .053 .089 .016 .010 .016 12 12 MILLIMETERS* MIN MAX 3 0.65 BSC. 1.30 BSC. 0.80 1.10 0.80 1.00 0.00 .010 1.80 2.40 1.15 1.35 1.80 2.25 0.10 0.41 0.08 0.25 0.15 0.40 8 12 8 12 *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" (0.127mm) per side. JEITA (EIAJ) Equivalent: SC70 Drawing No. C04-104 2004-2013 Microchip Technology Inc. DS21889E-page 17 MCP111/112 3-Lead Plastic Transistor Outline (TO) (TO-92) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E1 D n 1 L 1 2 3 B p c A R Units Dimension Limits n p MIN INCHES* NOM MAX MILLIMETERS NOM 3 1.27 3.30 3.62 4.45 4.71 4.32 4.64 2.16 2.29 12.70 14.10 0.36 0.43 0.41 0.48 4 5 2 3 MIN Number of Pins 3 Pitch .050 Bottom to Package Flat A .130 .143 .155 Overall Width E1 .175 .186 .195 Overall Length D .170 .183 .195 Molded Package Radius R .085 .090 .095 Tip to Seating Plane L .500 .555 .610 c Lead Thickness .014 .017 .020 Lead Width B .016 .019 .022 4 5 6 Mold Draft Angle Top Mold Draft Angle Bottom 2 3 4 *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: TO-92 Drawing No. C04-101 DS21889E-page 18 MAX 3.94 4.95 4.95 2.41 15.49 0.51 0.56 6 4 2004-2013 Microchip Technology Inc. MCP111/112 5.2 Product Tape and Reel Specifications FIGURE 5-1: EMBOSSED CARRIER DIMENSIONS (8, 12, 16 AND 24 MM TAPE ONLY) Top Cover Tape A0 W B0 K0 P TABLE 1: Case Outline CARRIER TAPE/CAVITY DIMENSIONS Carrier Dimensions Package Type W mm Cavity Dimensions P mm A0 mm B0 mm Output Quantity Units K0 mm Reel Diameter in mm TT SOT-23B 3L 8 4 3.15 2.77 1.22 3000 180 LB SC-70 3L 8 4 2.4 2.4 1.19 3000 180 FIGURE 5-2: 3-LEAD SOT-23/SC70 DEVICE TAPE AND REEL SPECIFICATIONS User Direction of Feed Device Marking W PIN 1 P Standard Reel Component Orientation 2004-2013 Microchip Technology Inc. DS21889E-page 19 MCP111/112 FIGURE 5-3: TO-92 DEVICES User Direction of Feed P Device Marking MARK MARK MARK FACE FACE FACE Seal Tape Back Tape Note: W Bent leads are for Tape and Reel only. FIGURE 5-4: SOT-89 DEVICES User Direction of Feed Pin 1 Pin 1 P, Pitch Standard Reel Component Orientation DS21889E-page 20 W, Width of Carrier Tape Reverse Reel Component Orientation 2004-2013 Microchip Technology Inc. MCP111/112 APPENDIX A: REVISION HISTORY Revision E (January 2013) * Added a note to each package outline drawing. Revision D (June 2005) 1. Added SOT-89-3 throughout. package information Revision C (March 2005) The following is the list of modifications: 1. 2. 3. 4. 5. 6. Added Section 4.4 "Using in PIC(R) Microcontroller ICSPTM Applications (MCP111 only)" on using the MCP111 in PIC microcontroller ICSP applications. Added VODH specifications in Section 1.0 "Electrical Characteristics" (for ICSP applications). Added Figure 2-28. Added devices features table to page 1. Updated SC-70 package markings and added Pb-free marking information to Section 5.0 "Packaging information". Added Appendix A: "Revision History". Revision B (August 2004) 1. Corrected package marking information in Section 5.0 "Packaging information" Revision A (May 2004) * Original Release of this Document. 2004-2013 Microchip Technology Inc. DS21889E-page 21 MCP111/112 NOTES: DS21889E-page 22 l 2004-2013 Microchip Technology Inc. MCP111/112 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device XXX X X XX Tape/Reel Monitoring Temperature Package Range Option Options Examples: a) b) Device: MCP111: MicroPower Voltage Detector, open-drain MCP111T: MicroPower Voltage Detector, open-drain (Tape and Reel) MCP112: MicroPower Voltage Detector, push-pull MCP112T: MicroPower Voltage Detector, push-pull (Tape and Reel) c) d) Monitoring Options: Temperature Range: Package: 195 240 270 290 300 315 450 475 = = = = = = = = 1.90V 2.32V 2.63V 2.90V 2.93V 3.08V 4.38V 4.63V I E = -40C to +85C (MCP11X-195 only) = -40C to +125C (Except MCP11X-195 only) LB MB TO TT = = = = SC-70, 3-lead SOT-89, 3-lead TO-92, 3-lead SOT-23B, 3-lead 2004-2013 Microchip Technology Inc. a) b) c) d) MCP111T-195I/TT: Tape and Reel, 1.95V option, open-drain, -40C to +85C, SOT-23B package. MCP111T-315E/LB: Tape and Reel, 3.15V option, open-drain, -40C to +125C, SC-70-3 package. MCP111-300E/TO: 3.00V option, open-drain, -40C to +125C, TO-92-3 package. MCP111-315E/MB: 3.15V option, open-drain, -40C to +125C, SOT-89-3 package. MCP112T-290E/TT: Tape and Reel, 2.90V option, push-pull, 40C to +125C, SOT-23B-3 package. MCP112T-475E/LB: Tape and Reel, 4.75V option, push-pull, -40C to +125C, SC-70-3 package. MCP112-450E/TO: 4.5V option, push-pull, -40C to +125C, TO-92-3 package. MCP112-315E/MB: 3.15V option, push-pull, -40C to +125C, SOT-89-3 package. DS21889E-page 23 MCP111/112 NOTES: DS21889E-page 24 2004-2013 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. (c) 2004-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620769133 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2004-2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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