MICROWAVE POWER GaAs FET TIM1213-18L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER BROAD BAND INTERNALLY MATCHED FET P1dB=42.5dBm at 12.7GHz to 13.2GHz HIGH GAIN HERMETICALLY SEALED PACKAGE G1dB=6.0dB at 12.7GHz to 13.2GHz LOW INTERMODULATION DISTORTION IM3=-28dBc at Po=36dBm Single Carrier Level RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain SYMBOL CONDITIONS P1dB UNIT MIN. TYP. MAX. dBm 42.0 42.5 dB 5.0 6.0 VDS= 10V Compression Point Power Gain at 1dB Gain ( Ta= 25C ) IDSQ 4.4 A G1dB f = 12.7 to 13.2GHz Compression Point Drain Current IDS1 A 5.5 6.0 Gain Flatness G dB 0.8 Power Added Efficiency add % 28 3rd Order Intermodulation IM3 dBc -25 -28 Distortion Drain Current Channel Temperature Rise Two-Tone Test Po= 36.0dBm IDS2 (Single Carrier Level) A 5.5 6.0 Tch (VDS X IDS + Pin - P1dB) C 100 UNIT mS MIN. V -0.7 -2.8 -4.5 A 10.0 V -5 C/W 1.8 2.3 X Rth(c-c) Recommended gate resistance(Rg) : Rg= 100 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff Saturated Drain Current IDSS Gate-Source Breakdown Voltage VGSO Thermal Resistance ( Ta= 25C ) CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V IGS= -145A Rth(c-c) Channel to Case TYP. MAX. 4500 The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Dec. 2010 TIM1213-18L ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 11.5 Total Power Dissipation (Tc= 25 C) PT W 65 Channel Temperature Tch C 175 Storage Tstg C -65 to +175 PACKAGE OUTLINE (2-11C1B) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2