Caution: This device is sensiti ve to electrostatic discharge. Users should f ollow ES D handling procedures . 1/9
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FEATURES
• 10µs Short Circuit Withstand
• Non Punch Through Silicon
• Isolated Copper Baseplate
• Lead Free construction
APPLICATIONS
• High Power Inverters
• Motor Controllers
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM800DDS12-A000 is a dual switch 1200V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs s hort circuit withstand.
The module incorporates an electrically isolated
base plat e and lo w ind uctance constr uction enab ling
circuit designers to optimise circuit layouts and
utilise groun ded heat sinks for safety.
ORDERING INFOR MATION
Order As:
DIM800DDS12-A000
Note: When ordering, please use the whole part number.
.
KEY PARAMETERS
VCES 1200V
VCE (sat)* (typ) 2.2V
IC(max) 800A
IC(PK) (max) 1600A
*(measured at the power busbars and not the auxiliary terminals)
Fig. 1 Dual switch circuit diagram
Outline type code: D
(See package details for further informat ion)
Fig. 2 Electrical connections (not to scale)
DIM800DDS12-A000
Dual Switch IGBT Module
DS5540-2.2 June 2005 (LN24051)
SEMICONDUCTOR
DIM800DDS12-A000
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ABSOLUTE MAXIMUM RATINGS – PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25° C unless stated otherwise
Symbol
Parameter
Test Conditions Max. Units
VCES Collector-emitter voltage VGE = 0V 1200 V
VGES Gate-emitter voltage ±20 V
ICContinuous collector current Tcase = 85°C 800 A
IC(PK) Peak collec to r current 1ms, Tcase =115° C 1600 A
Pmax Max. transistor power dissipation Tcase = 25°C, T
j = 150°C 6940 W
I2t Diode I2t value VR = 0, tP = 10ms, Tvj = 125°C 100 kA2S
Visol Isolation voltage – per module Commoned term ina ls to base plate. AC RMS, 1 min, 50Hz 2500 V
SEMICONDUCTOR
DIM800DDS12-A000
Caution: This device is sensiti ve to electrostatic discharge. Users should f ollow ES D handling procedures 3/9
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THERMAL AND MECHANICAL RATIN GS
Internal insulat ion material: Al2O3
Baseplate material: Copper
Creepage dista nc e: 20mm
Clearance: 10mm
CTI (Critical Tracking Index): 175
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
Rth(j-c) Thermal resistance – transistor
(per arm) Continuous dissipation –
junction to case
- - 18 °C/kW
Rth(j-c) Thermal resistance – diode (per arm) Continuous dissipation –
junction to case
- - 40 °C/kW
Rth(c-h) Thermal resistance – case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grea se)
- - 8 °C/kW
TjJunction temperature Transistor - - 150 °C
Diode - - 125 °C
Tstg Storage temperat ure range - -40 -125 °C
-Screw t orque Mounting – M6 - - 5 Nm
Electrical connections – M4 - - 2 Nm
Electrical connections – M8 - - 10 Nm
SEMICONDUCTOR
DIM800DDS12-A000
Caution: This device is sensiti ve to electrostatic discharge. Users should f ollow ES D handling procedures 4/9
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ELECTRICAL CHA RACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
Ices Collector cut-off current VGE = OV, VCE = VCES - - 1 mA
VGE = OV, VCE = VCES, Tcase = 125°C - - 25 mA
Ices Gate leakage current VGE = ±20V, VCE = 0V - - 4 µA
VGE(TH) Gate threshold voltage IC = 40mA, VGE = VCE 4.5 5.5 6.5 V
VCE(sat)
Collector-emitter saturation voltage VGE = 15V, IC = 800A - 2.2 2.8 V
VGE = 15V, IC = 800A, Tcase = 125°C - 2.6 3.2 V
IFDiode forward current DC - - 800 A
IFM Diode maximum forward current tp = 1ms - - 1600 A
VF
Diode forward voltage IF = 800A - 2.1 2.4 V
IF = 800A, Tcase = 125°C - 2.1 2.4 V
Cies Input capacitance VCE = 25V, VGE = 0V, f = 1MH z -90 - nF
LMModule inductance - - 20 - nH
RINT Internal transistor resistance - - 0.27 -mΩ
SCData Short circuit. Isc Tj = 125°C, Vcc = 900V, I1-5500 - A
tp ≤ 10µs,
VCE(max) = VCES - L* × di/dt I2-4500 - A
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals
* L is the circuit induc tance + LM
SEMICONDUCTOR
DIM800DDS12-A000
Caution: This device is sensiti ve to electrostatic discharge. Users should f ollow ES D handling procedures 5/9
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ELECTRICAL CHA RACTERISTICS
Tcase = 25° C unless stated otherwise.
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
td(off) Turn-off delay time IC = 800A -1250 - ns
tfFall time VGE = ±15V -170 - ns
EOFF Turn-off energy loss VCE =600V -130 - mJ
td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7Ω-250 - ns
trRise time L ∼ 100nH -250 - ns
EOTurn-on energy loss -80 - mJ
QgGate charge - 9 - µC
Qrr Diode reverse recovery charge IF = 800A, VR = 600V, -80 - µC
Irr Diode reverse current dlF/dt = 4200A/µs -380 - A
EREC Diode reverse recovery energy -30 - mJ
Tcase = 125° C unless stat ed otherwise.
Symbol
Parameter
Test Conditions Min. Typ. Max. Units
td(off) Turn-off delay time IC = 800A -1500 - ns
tfFall time VGE = ±15V -200 - ns
EOFF Turn-off energy loss VCE = 600V -160 - mJ
td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.7Ω-400 - ns
trRise time L ∼ 100nH -220 - ns
EON Turn-on energy loss -120 - mJ
Qrr Diode reverse recovery charge IF = 800A, VR = 600V, -160 - µC
Irr Diode reverse current dlF/dt = 4000A/µs -450 - A
EREC Diode reverse recovery energy -60 - mJ
SEMICONDUCTOR
DIM800DDS12-A000
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Fig.3 Typical output characteristics Fig.4 Typical output characteristics
Fig.5 Typical switching energy vs collector current Fig.6 Typical switching energy vs gate resistance
SEMICONDUCTOR
DIM800DDS12-A000
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Fig.7 Diode typical forward characteristics Fig.8 Reverse bias safe operating area
Fig.9 Diode reverse bias safe operating area Fig.10 Transient thermal impedance
SEMICONDUCTOR
DIM800DDS12-A000
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PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1600g
Module outline type code: D
SEMICONDUCTOR
DIM800DDS12-A000
Caution: This device is sensiti ve to electrostatic discharge. Users should f ollow ES D handling procedures 9/9
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the
basic semiconductor, and has devel oped a flexible range of heatsink and clamping systems in line with advances in
device voltag es and current capability of our semiconductors.
We offe r an extensi ve range of air and liquid cooled assemblies covering the full r ange of circuit designs in general
use today. The Assembly gr oup offers high quality e n g i neering support dedicated to designing new units to satisfy
the growing needs of our customers.
Using the latest CAD m ethods our team of design and applications engineers aim to provide the Power Assembly
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom.
Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
Dynex S emiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product sta tu s . The annotations are as
follows:-
Target Information: This is the most tentative for m of information and represents a very prelim inary s p ecification. No
actual design wor k on the product has been st arted.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may
change.
Advance Info r m ation: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fix ed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in wri ting) may not be used, applied or re produced for any purpose nor form part of any order or
contract nor to be regarded as a repr esentation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any p roduct or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
fully determine the performance and suitability of any equipment using such inf ormati on and to ensure that any publication or data used is up to date and has not been superseded. These
products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sol d and services provided
subject to the Company’s conditions of sale, which are available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade nam es of their respective owners.
