Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N3997
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3997J)
• JANTX level (2N3997JX)
• JANTXV level (2N3997JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• High-speed power switching
• Power transistor
• NPN silicon transistor
Features
• Hermetically sealed TO-x metal can
• Also available in chip configuration
• Chip geometry 9201
• Reference document:
MIL-PRF-19500/374
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 80
Volts
Collector-Base Voltage VCBO 100
Volts
Emitter-Base Voltage VEBO 8
Volts
Collector Current, Continuous IC 5
A
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 2
11.4
W
mW/°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C PT 30
300
W
mW/°C
Thermal Resistance RθJC 3.33 °C/W
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N3997
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Base Breakdown Voltage V(BR)CBO IC = 10 µA 100
Volts
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 50 mA 80 Volts
Collector-Emitter Cutoff Current ICEO V
CE = 60 Volts 10 µA
Collector-Emitter Cutoff Current ICES1
ICES1
VCE = 80 Volts
VCE = 80 Volts, TA = 150°C
200
50
nA
µA
Emitter-Base Cutoff Current IEBO1
IEBO2
VEB = 5 Volts
VEB = 8 Volts
200
10
nA
µA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
hFE3
hFE4
IC = 50 mA, VCE = 2 Volts
IC = 1 A, VCE = 2 Volts
IC = 5 A, VCE = 5 Volts
IC = 1 A, VCE = 2 Volts
TA = -55°C
60
80
20
20
240
Base-Emitter Saturation Voltage VBEsat1
VBEsat2
IC = 1 A, IB = 100 mA
IC = 5 A, IB = 500 mA
0.6
1.2
1.6 Volts
Collector-Emitter Saturation Voltage VCEsat1
VCEsat2
IC = 1 A, IB = 100 mA
IC = 5 A, IB = 500 mA
0.25
2 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 1 A,
f = 10 MHz 3 12
Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 150
pF
Switching Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Delay Time td 100 ns
Rise Time tr 240 ns
Storage Time ts 1.75 µs
Fall Time tf 300 ns
Saturated Turn-On Time tON 300 ns
Saturated Turn-Off Time tOFF 2.0 µs