NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0126B DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR____ __ __
└ Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level (for SM, use –S)
│
│
│
│
│
│
└ Package Type
__ = Axial Leaded
SM = Surface Mount Round Tab
(MELF)
SMS = Surface Mount Square Tab
│
│
│
│
│
│
│
│
│
│
│
└
Device Type ( VRWM )
6638 = 125 V
6642 = 75 V
6643 = 50 V
4150 = 75 V
SDR6638, SDR6642, SDR6643,
& SDR4150 SERIES
300 mA
50 - 125 VOLTS
4.5 - 6.0 nsec HYPER FAST RECOVERY
RECTIFIER
FEATURES:
• Hyper Fast Reverse Recovery Time 4.5 - 6 ns
Max
• Hermetically Sealed
• Planar Passivated Chip
• For High Efficiency Applications
• Available in Axial, Subminiature Round Tab
& Subminiature Square Tab Versions
• TX, TXV, and S-Level Screening Available2/
• Replacement for 1N6638, 1N6642, 1N6643, &
1N4150-1
• Metallurgical Class 3 Bond
MAXIMUM RATINGS 3/
RATING SYMBOL VALUE UNIT
Peak Repetitive Reverse Voltage
DC Blocking Voltage
SDR6638
SDR6642
SDR6643
SDR4150
VRWM
VR
125
75
50
75
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C) IO 300 mAmps
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TC = 25°C)
IFSM 2.5 Amps
Operating & Storage Temperature TOP and TSTG -65 to +175 °C
Thermal Resistance
SM and SMS- Junction to End Tab
Axial- Junction to Lead @ .375”
RθJE
RθJL
100
325 °C/W
NOTES:
1/ For Ordering Information, Price, and Availability- Contact
Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows
Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics
@25ºC.
Axial Leaded
SM
SMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RC0126B DOC
ELECTRICAL CHARACTERISTICS 3/
CHARACTERISTICS SYMBOL LIMIT UNIT
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 25°C) @ IF = 10mA
SDR6638
SDR6642
SDR6643
SDR4150
VF1
0.8
0.8
1.0
0.74
Vdc
SDR6638 @ IF= 200mA
SDR6642 @ IF= 100mA
SDR6643 @ IF = 100mA
SDR4150 @ IF = 100mA
VF2
1.1
1.2
1.2
0.92
Vdc
Maximum Instantaneous Forward Voltage Drop (Pulsed) IF = 100mA, TA = -55°C VF3 1.3 Vdc
Minimum Breakdown Voltage
Ir = 100 μA
SDR6638
SDR6642
SDR6643
SDR4150
BVR
125
100
75
75
Vdc
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
SDR6638 @ VR= 20V
SDR6642 @ VR= 20V
SDR6643 @ VR = 20V
SDR4150 @ VR = 50V
IR1
35
25
50
100
nA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
SDR6638 @ VR= 100V
SDR6642 @ VR= 75V
SDR6643 @ VR= 50V
IR2
500
500
500
nA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 150°C)
SDR6638 @ VR= 20V
SDR6642 @ VR= 20V
SDR6643 @ VR = 20V
SDR4150 @ VR = 50V
IR3
50
50
75
100
μA
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 150°C)
SDR6638 @ VR= 100V
SDR6642 @ VR= 75V
SDR6643 @ VR = 50V
IR4
100
100
160
μA
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 0V
SDR6638
SDR6642
SDR6643
SDR4150
CJ1
2.5
5.0
5.0
2.5
pf
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 1.5V
SDR6638
SDR6642
SDR6643
CJ2
2.0
2.8
2.8
pf
Maximum Reverse Recovery Time
(IF = IR = 10 mA, IRR = 1 mA)
SDR6638
SDR6642
SDR6643
SDR4150
trr
4.5
5.0
6.0
4.0
nsec
AXIAL
DIMENSIONS
DIM MIN MAX
A .056” .080”
B .130” .180”
C 1.00” 1.50”
D .018” .022”
SM
DIMENSIONS
DIM MIN MAX
A .056” .064”
B .130” .146”
C .010” .022”
SMS
DIMENSIONS
DIM MIN MAX
A .070” .085”
B .180” .210”
C .022” .028”
D .001” ---
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDR6638, SDR6642, SDR6643,
& SDR4150 SERIES
