B-12 01/99
2N4340, 2N4341
N-Channel Silicon Junction Field-Effect Transistor
¥ Small Signal Amplifiers
¥ Current Regulators
¥ Voltage-Controlled Resistors
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 50 V
Continuous Forward Gate Current 50 mA
Continuous Device Power Dissipation 300 mW
Power Derating (to 175°C) 2mW/°C
TOÐ18 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Surface Mount
SMP4340, SMP4341
At 25°C free air temperature: 2N4340 2N4341 Process NJ16
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V(BR)GSS – 50 – 50 V IG= – 1 µA, VDS = ØV
Gate Reverse Current IGSS – 100 – 100 pA VGS = – 30V, VDS = ØV
– 100 – 100 nA VGS = – 30V, VDS = ØV TA= 150°C
Gate Source Cutoff Voltage VGS(OFF) – 1– 3– 2– 6 V V
DS = 15V, ID= 0.1 µA
Drain Saturation Current (Pulsed) IDSS 1.2 3.6 3 9 mA VDS = 15V, VGS = ØV
Drain Cutoff Current ID(OFF) 0.05 0.07 nA VDS = 15V, VGS = ( )
(– 5) (– 10) V
Dynamic Electrical Characteristics
Drain Source ON Resistance rds(on) 1500 800 ΩVGS = ØV, ID= ØA f = 1 kHz
Common Source gfs 1300 3000 2000 4000 µS VDS = 15V, VGS = ØV f = 1 kHz
Forward Transconductance
Common Source Output Conductance gos 30 60 µS VDS = 15V, VGS = ØV f = 1 kHz
Common Source Input Capacitance Ciss 77pFV
DS = 15V, VGS = ØV f = 1 MHz
Common Source Crss 33pFV
DS = 15V, VGS = ØV f = 1 MHz
Reverse Transfer Capacitance
Noise Figure NF 1 1 dB VDS = 15V, VGS = ØV f = 1 kHz
RG= 1MΩ, BW = 200 Hz
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375 www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-12
