(SEE REVERSE SIDE)
D44C SERIES
NPN SILICON
POWER TRANSISTOR
JEDEC TO-220 CASE
DATA SHEE
DESCRIPTION
The CENTRAL SEMICONDUCTOR D44C Series types are NPN Silicon Power Transistors designed for general-purpose
amplifier and switching applications.
MAXIMUM RATINGS (TC=25°C unless otherwise noted)
D44C1 D44C4 D44C7 D44C10
D44C2 D44C5 D44C8 D44C11
SYMBOL D44C3 D44C6 D44C9 D44C12 UNITS
Collector-Emitter Voltage VCES 40 55 70 90 V
Collector-Emitter Voltage VCEO 30 45 60 80 V
Emitter-Base Voltage VEBO 5.0
V
Collector Current IC 4.0 A
Collector Current (Peak) I
CM 6.0 A
Power Dissipation PD 30
W
Operating and Storage
Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance
(Junction to Case) ΘJC 4.2
°C/W
(Junction to Ambient) ΘJA 75 °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICES VCE=Rated VCES 10 µA
IEBO VEB=5.0V 100 µA
BVCEO IC=100mA (D44C1, 2, 3 ONLY) 30 V
BVCEO IC=100mA (D44C4, 5, 6 ONLY) 45 V
BVCEO IC=100mA (D44C7, 8, 9 ONLY) 60 V
BVCEO IC=100mA (D44C10, 11, 12 ONLY) 80 V
VCE(SAT) IC=1.0A, IB=50mA (D44C2, 3, 5, 6, 8, 9, 11, 12 ONLY) 0.5 V
VCE(SAT) IC=1.0A, IB=50mA (D44C1, 4, 7, 10 ONLY) 0.5 V
VBE(SAT) IC=1.0A, IB=100mA 1.3 V
Cob VCB=10V, f=1.0MHz 100 pF
fT VCE=4.0V, IC=20mA 50 MHz
td + tr IC=1.0A, IB1=100mA 100 nsec
ts IC=1.0A, IB1=IB2=100mA 500 nsec
tf IC=1.0A, IB1=IB2=100mA 75 nsec
R1 (14-October 2003)