
CMT01N60
POWER FIELD EFFECT TRANSISTOR
2005/12/05 Rev. 1.5 Champion Microelectronic Corporation Page 2
ORDERING INFORMATION
Part Number Package
CMT01N60N251 TO-251
CMT01N60N252 TO-252
CMT01N60N92 TO-92
CMT01N60GN251* TO-251
CMT01N60GN252* TO-252
CMT01N60GN92* TO-92
*Note: G : Suffix for Pb Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT01N60
Characteristic Symbol Min Typ Max Units
Drain-Source Breakdown Voltage
(V
GS = 0 V, ID = 250 μA)
V(BR)DSS 600 V
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
IDSS
0.1
0.3
mA
Gate-Source Leakage Current-Forward
(V
gsf = 20 V, VDS = 0 V)
IGSSF 100 nA
Gate-Source Leakage Current-Reverse
(V
gsr = 20 V, VDS = 0 V)
IGSSR 100 nA
Gate Threshold Voltage
(V
DS = VGS, ID = 250 μA)
VGS(th) 2.0 4.0 V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) * RDS(on) 8.0 Ω
Forward Transconductance (VDS ≧ 50 V, ID = 0.5A) * gFS 0.5 mhos
Input Capacitance Ciss 210 pF
Output Capacitance Coss 28
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz) Crss 4.2 pF
Turn-On Delay Time td(on) 8 ns
Rise Time tr 21 ns
Turn-Off Delay Time td(off) 18 ns
Fall Time
(VDD = 300 V, ID = 1.0 A,
VGS = 10 V,
RG = 18Ω) * tf 24 ns
Total Gate Charge Qg 8.5 14 nC
Gate-Source Charge Qgs 1.8 nC
Gate-Drain Charge
(VDS = 400 V, ID = 1.0 A,
VGS = 10 V)* Qgd 4
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD 4.5 nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS 7.5 nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1) VSD 1.5 V
Forward Turn-On Time ton ** ns
Reverse Recovery Time
(IS = 1.0 A, VGS = 0 V,
dIS/dt = 100A/μs) trr 350 500 ns
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance