UTC BU508 AFI NPN E PI TA XI AL S ILI CO N TR AN SI ST OR
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R214-001,A
SILICON DIFFUSED POWER
TRANSISTOR
DESCRIPTION
The UTC BU508AFI is high voltage, high speed switching
NPN transistors in a plastic envelope, primarily for use in
horizontal deflection circuites of colour television receivers.
Features
* TV color horizontal deflection.
* With TO-3PML fully isolated package.
Absolute Maximum Rating Tc=25°C
PARAMETER SYMBOL VALUE UNIT
Collector-base voltage(VBE=0) VCBO 1500 V
Collector-emitter voltage(IB=0) VCEO 700 V
Emitter-base Voltage(IC=0) VEBO 10 V
Collector peak current Icp 15 A
Collector current Ic 8 A
Collector power dissipation Pc 60 W
Junction temperature Tj 150 °C
Storage temperature Tstg -65~150 °C
ELECTRICAL CHARACTERISTICS Tc=25°C
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNIT
Collector-base cut off current ICBO V
cE=1500V, VBE=0 2.0 mA
Emitter-base cut off current IEBO V
EB=5V, IC=0 100 uA
Collector-emitter Sustaining voltage VCEO(sus) I
C=100mA, IB=0 700 V
Emitter-base breakdown voltage VEBO I
E=10mA, IC=0 10 V
Collector-emitter saturation voltage VCE(SAT) I
C=4.5A, IB=2A 1.0 V
Base-emitter saturation voltage VBE(SAT) I
C=4.5A, IB=2A 1.3 V
Base current peak value HFE I
C=100mA, VCE=5V 6 30
TO-3PML
1. BASE
2. COLLECTOR
3. EMITTER
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