BAW27 www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES * Silicon epitaxial planar diode * Low forward voltage drop * High forward current capability * AEC-Q101 qualified * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DESIGN SUPPORT TOOLS click logo to get started * High speed switch and general purpose use in computer and industrial applications Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART BAW27 ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS BAW27-TR or BAW27-TAP BAW27 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp = 1 s Forward continuous current Average forward current Power dissipation SYMBOL VALUE UNIT VRRM 75 V VR 60 V IFSM 4 A IF 600 mA VR = 0 IF(AV) 300 mA l = 4 mm, TL = 45 C Ptot 440 mW l = 4 mm, TL 25 C Ptot 500 mW THERMAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature Storage temperature range TEST CONDITION SYMBOL VALUE UNIT l = 4 mm, TL = constant RthJA 350 K/W Tj 175 C Tstg -65 to +175 C Rev. 1.8, 13-Jul-17 Document Number: 85548 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAW27 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL TYP. MAX. IF = 10 mA VF 0.670 0.750 V IF = 50 mA VF 800 850 mV IF = 200 mA VF 950 1000 mV IF = 400 mA VF 1120 1250 mV VR = 60 V IR 100 nA VR = 60 V, Tj = 100 C IR 50 A Breakdown voltage IR = 5 A, tp/T = 0.01, tp = 0.3 ms V(BR) Diode capacitance VR = 0 V, f = 1 MHz, VHF = 50 mV CD 4 pF IF = IR = 10 mA, iR = 0.1 x IR trr 6 ns Forward voltage Reverse current Reverse recovery time MIN. UNIT 75 V PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] O 0.4 min. [0.015] O 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.8, 13-Jul-17 Document Number: 85548 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: BAW27-TAP BAW27-TR