
IRFB4215
2www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 90A, VGS = 0V
trr Reverse Recovery Time ––– 78 120 ns TJ = 25°C, IF = 64A
Qrr Reverse Recovery Charge ––– 250 380 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
115
360
A
Starting TJ = 25°C, L = 60µH
RG = 25Ω, IAS = 85A, VGS=10V (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Notes:
ISD ≤ 90A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
This is tested with same test conditions as the existing data sheet
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.066 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 9.0 mΩVGS = 10V, ID = 54A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 61 ––– ––– S VDS = 25V, ID = 54A
––– ––– 25 µA VDS = 60V, VGS = 0V
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 170 ID = 64A
Qgs Gate-to-Source Charge ––– ––– 39 nC VDS = 48V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 59 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 22 ––– VDD = 30V
trRise Time ––– 160 ––– ID = 64A
td(off) Turn-Off Delay Time ––– 77 ––– RG = 6.2Ω
tfFall Time ––– 110 ––– VGS = 10V, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 4080 ––– VGS = 0V
Coss Output Capacitance ––– 840 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 180 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy––– 1080220mJ IAS = 90A, L = 54µH
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current