PD - 95884 IRFB4215 HEXFET(R) Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS(on) = 9.0m G ID = 115A S Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. Units 115 81 360 270 1.8 20 85 18 4.7 -55 to + 175 A W W/C V A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.24 --- 0.56 --- 40 C/W 1 7/7/04 IRFB4215 Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 60 --- --- 2.0 61 --- --- --- --- --- --- --- --- --- --- --- IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- LS Internal Source Inductance Ciss Coss Crss EAS Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy V(BR)DSS V(BR)DSS/TJ IGSS --- --- --- --- --- Typ. --- 0.066 --- --- --- --- --- --- --- --- --- --- 22 160 77 110 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 9.0 m VGS = 10V, ID = 54A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 54A 25 VDS = 60V, VGS = 0V A 250 VDS = 48V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 170 ID = 64A 39 nC VDS = 48V 59 VGS = 10V, See Fig. 6 and 13 --- VDD = 30V --- ID = 64A ns --- RG = 6.2 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact 4080 --- VGS = 0V 840 --- VDS = 25V 180 --- pF = 1.0MHz, See Fig. 5 1080220 mJ IAS = 90A, L = 54H D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 115 showing the A G integral reverse --- --- 360 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 90A, VGS = 0V --- 78 120 ns TJ = 25C, IF = 64A --- 250 380 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Starting TJ = 25C, L = 60H Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents operation outside rated limits. RG = 25, IAS = 85A, VGS=10V (See Figure 12) This is a calculated value limited to TJ = 175C . This is tested with same test conditions as the existing data sheet ISD 90A, di/dt 250A/s, VDD V(BR)DSS, Calculated continuous current based on maximum allowable T 175C J 2 junction temperature. Package limitation current is 75A. www.irf.com IRFB4215 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 4.5V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 20s PULSE WIDTH TJ = 175 C 10 0.1 100 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 TJ = 175 C 100 TJ = 25 C 10 1 4.0 V DS = 25V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 4.5V ID = 70A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFB4215 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 5000 Ciss 4000 3000 2000 Coss 1000 VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 1 10 0 100 VDS , Drain-to-Source Voltage (V) FOR TEST CIRCUIT SEE FIGURE 13 40 80 120 160 200 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10000 ID, Drain-to-Source Current (A) 1000 100 TJ = 175 C 10 TJ = 25 C 1 0.1 0.0 0 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage V GS = 0 V 0.5 1.0 1.5 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 ID = 64A Crss 0 ISD , Reverse Drain Current (A) C, Capacitance (pF) 6000 20 VGS , Gate-to-Source Voltage (V) 7000 2.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100 100sec 10 1 Tc = 25C Tj = 175C Single Pulse 1msec 10msec 0.1 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFB4215 120 100 ID , Drain Current (A) RD VDS LIMITED BY PACKAGE VGS D.U.T. RG 80 + -VDD VGS 60 Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature (C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature tr td(on) t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 J J 1 R2 R2 2 1 C 2 Ri (C/W) i (sec) 0.266 0.00036 0.294 0.003748 Ci= i/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R1 R1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB4215 L VDS D.U.T RG IAS VGS 20V tp DRIVER + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 1000 15V ID 12A 18A BOTTOM 85A TOP 800 600 400 200 0 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFB4215 Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRFB4215 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C TO-220AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 7/04 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/