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Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, afliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD243/A/B/C
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test :PW=300µs, duty Cycle<20% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Vol tage : BD24 3
: BD243A
: BD243B
: BD243C
45
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage: BD 243
: BD243A
: BD243B
: BD243C
45
60
80
100
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 6 A
ICP *Collector Current (Pulse) 10 A
IB Base Current 2 A
PC Collector Dissipation (TC=25°C) 65 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condit ion Min. Typ. Max. Units
VCEO(sus) * Collector-Emit ter Sustai ni ng Voltage
: BD2 43
: BD243A
: BD243B
: BD243C
IC=30mA , IB=0
45
60
80
100
V
V
V
V
ICEO Collect or Cut- of f Current : BD243/243A
: BD243B/243C VCE = 30 V, IB = 0
VCE = 60 V, IB = 0 0.7
0.7 mA
mA
ICES Collector Cut-off Current : BD243
: BD243A
: BD243B
: BD243C
VCE = 45 V, VBE = 0
VCE = 60 V, VBE = 0
VCE = 80 V, VBE = 0
VCE = 10 0V, VBE = 0
0.4
0.4
0.4
0.4
mA
mA
mA
mA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA
hFE *DC Current Gain VCE = 4V, IC = 0.3A
VCE = 4V, IC = 3A 30
15
VCE(sat) *Collector-Emitt er Satur ation Voltage IC = 6A, IB = 1A 1.5 V
VBE(on) *Base-Emitter O N Voltage VCE = 4V, IC = 6A 2 V
BD243/A/B/C
Medium Power Linear and Switching
Applications
Complement to BD244, BD244A, BD244B and BD244C respectively
1.Base 2.Collector 3.Emitter
1TO-220
©2000 Fairchild Semiconductor International
BD243/A/B/C
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
0.01 0.1 1 10
10
100
1000
VCE = 2V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
IC = 10.1 IB
VBE(sat)(V), SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.1 1 10
0.01
0.1
1
IC = 10.1 IB
VBE(sat)(V), SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
110100
0.1
1
10
100
BD243
BD243A
BD243B
BD243C
DC
10ms
1ms
10µs
100µs
IC(max)
IC[A], COLLECT OR CURRENT
VCE[V], COLLECTOR-EMITTE R VOLTAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
PC[W], POWER DISSIPATION
T[oC], CA SE TEM PER ATURE
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
TO-220
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD243/A/B/C
Dimensions in Millimeters
©2000 Fairchild Semiconductor International Rev. E
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SyncFET™
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Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
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Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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