BPX 38
NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
Lead (Pb) Free Product - RoHS Compliant
2007-03-29 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 450 nm bis 1120 nm
• Hohe Linearität
• Hermetisch dichte Metallbauform (TO-18) mit
Basisanschluß, geeignet bis 125 °C
• Gruppiert lieferbar
Anwendungen
• Lichtschranken für Gleich- und
Wechsellichtbetrieb
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type
Bestellnummer
Ordering Code
BPX 38 Q62702P0015
BPX 38-2/3 Q62702P3578
BPX 38-3 Q62702P0015S003
BPX 38-4 Q62702P0015S004
Features
• Especially suitable for applications from
450 nm to 1120 nm
• High linearity
• Hermetically sealed metal package (TO-18)
with base connection, suitable up to 125 °C
• Available in groups
Applications
• Photointerrupters
• Industrial electronics
• For control and drive circuits
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BPX 38
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg – 40 … + 125 °C
Kollektor-Emitterspannung
Collector-emitter voltage
VCE 50 V
Kollektorstrom
Collector current
IC50 mA
Kollektorspitzenstrom, τ < 10 µs
Collector surge current
ICS 200 mA
Emitter-Basisspannung
Emitter-base voltage
VEB 7 V
Verlustleistung, TA = 25 °C
Total power dissipation
Ptot 220 mW
Wärmewiderstand
Thermal resistance
RthJA 450 K/W
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Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max 880 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ450 … 1120 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A0.675 mm2
Abmessung der Chipfläche
Dimensions of chip area
L × B
L × W
1 × 1 mm × mm
Halbwinkel
Half angle
ϕ ± 40 Grad
deg.
Fotostrom der Kollektor-Basis-Fotodiode
Photocurrent of collector-base photodiode
Ee = 0.5 mW/cm2, VCB = 5 V
Ev = 1000 Ix, Normlicht/standard light A,
VCB = 5 V
IPCB
IPCB
1.8
5.5
µA
µA
Kapazität
Capacitance
VCE = 0 V, f = 1 MHz, E = 0
VCB = 0 V, f = 1 MHz, E = 0
VEB = 0 V, f = 1 MHz, E = 0
CCE
CCB
CEB
23
39
47
pF
pF
pF
Dunkelstrom
Dark current
VCE = 25 V, E = 0
ICEO 20 (≤ 100) nA
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BPX 38
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einh.
Unit
-2 -3 -4 -5
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.5 mW/cm2, VCE = 5 V
Ev = 1000 Ix, Normlicht/standard light A,
VCE = 5 V
IPCE
IPCE
0.2 … 0.4
0.95
0.32 … 0.63
1.5
0.5 … 1.0
2.3
≥ 0.8
3.6
mA
mA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf912 15 18 µs
Kollektor-Emitter-Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin
1) × 0.3
Ee = 0.5 mW/cm2
VCEsat 200 200 200 200 mV
Stromverstärkung
Current gain
Ee = 0.5 mW/cm2, VCE = 5 V
170 280 420 650 –
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of the specified group.
IPCE
IPCB
-----------
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Relative Spectral Sensitivity
Srel = f (λ)
Output Characteristics
IC = f (VCE), IB = Parameter
Photocurrent
IPCE/IPCE25o = f (TA), VCE = 5 V
Photocurrent
IPCE = f (Ee), VCE = 5 V
Output Characteristics
IC = f (VCE), IB = Parameter
Dark Current
ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0
Total Power Dissipation
Ptot = f (TA)
Dark Current
ICEO = f (VCE), E = 0
Collector-Emitter Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
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Collector-Base Capacitance
CCB = f (VCB), f = 1 MHz, E = 0
Directional Characteristics
Srel = f (ϕ)
Emitter-Base Capacitance
CEB = f (VEB), f = 1 MHz, E = 0
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Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
ø5.6 (0.220)
ø5.3 (0.209)
2.54 (0.100)
spacing
ø4.8 (0.189)
E C B
(2.7 (0.106))
5.3 (0.209)
5.0 (0.197)
14.5 (0.571)
12.5 (0.492)
ø0.45 (0.018)
Radiant
GMOY6018
Approx. weight 1.0 g
ø4.6 (0.181)
5.0 (0.197)
5.5 (0.217)
Chip position sensitive area
0.9 (0.035)
1.1 (0.043)
1.1 (0.043)
0.9 (0.035)
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BPX 38
Lötbedingungen
Soldering Conditions
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLY0598
0
0
50 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/sca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
