N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
8263
Issue
3
Page 1 of
3
2N6660
• VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω
• Fast Switching
• Low Threshold Voltage (Logic Level)
• Low CISS
• Integral Source-Drain Body Diode
• Hermetic Metal TO39 Package
• High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VDS Drain – Source Voltage 60V
VGS Gate – Source Voltage ±20V
ID Continuous Drain Current TC = 25°C 1.0A
IDM Pulsed Drain Current
(1)
3.0A
PD Total Power Dissipation at TC ≤ 25°C 5W
De-rate TC > 25°C 40mW/°C
PD Total Power Dissipation at TA ≤ 25°C 725mW
De-rate TA > 25°C 5.8mW/°C
TJ Operating Temperature Range -65 to +150°C
Tstg Storage Temperature Range -65 to +150°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC
Thermal Resistance, Junction To Case 25 °C/W
RθJA
Thermal Resistance, Junction To Ambient 172 °C/W
Notes
NotesNotes
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width ≤ 300us, δ ≤ 2%
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
8263
Issue
3
Page 2 of
3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
BVDSS Drain-Source Breakdown
Voltage VGS = 0 ID = 1.0µA 60 V
VGS(th) Gate Threshold Voltage
VDS = VGS ID = 1.0mA 0.8 2.0
V TC = 125°C 0.3
TC = -55°C 2.5
IGSS Gate-Source Leakage Current
VGS = ±20V VDS = 0V ±100 nA
TC = 125°C ±500
IDSS Zero Gate Voltage
Drain Current
VGS = 0 VDS = 48V 1.0 µA
TC = 125°C 100
ID(ON)
(2)
On-State Drain Current VDS = 10V VGS = 10V 1.5 A
RDS(on)
(2)
Static Drain-Source
On-State Resistance
VGS = 5V ID = 0.3A 5.0
Ω
VGS = 10V ID = 1.0A 3.0
TC = 125°C 5.6
gfs
(2)
Forward Transconductance VDS = 25V ID = 0.5A 170 mƱ
VSD
(2)
Body Diode Forward Voltage VGS = 0 IS = 1.0A 0.7 1.6 V
trr
(2)
Body Diode Reverse Recovery VGS = 0 IS = 1.0A 350 ns
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 50
pF
Coss Output Capacitance VDS = 25V 40
Crss Reverse Transfer Capacitance f = 1.0MHz 10
td(on) Turn-On Delay Time VDD = 25V 10
ns
td(off) Turn-Off Delay Time ID = 1.0A RG = 50Ω 10
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
8263
Issue
3
Page 3 of
3
MECHANICAL DATA
Dimensions in mm (inches)
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
TO3
9
PACKAGE
(TO
-
20
5
A
D
)
Pin 1 - Source Pin 2 - Gate Pin 3 / Case - Drain
