
IRFB4110GPbF
2www.irf.com
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.033mH
RG = 25Ω, IAS = 108A, VGS =10V. Part not recommended for use
above this value.
S
D
G
ISD ≤ 75A, di/dt ≤ 630A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
Rθ is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Volta
e 100 ––– ––– V
∆V(BR)DSS
∆TJ Breakdown Volta
e Temp. Coefficient ––– 0.108 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– 3.7 4.5 mΩ
VGS(th) Gate Threshold Volta
e 2.0 ––– 4.0 V
IDSS Drain-to-Source Leaka
e Current ––– ––– 20
––– ––– 250
IGSS Gate-to-Source Forward Leaka
e ––– ––– 100
Gate-to-Source Reverse Leaka
e ––– ––– -100
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
fs Forward Transconductance 160 ––– ––– S
QgTotal Gate Char
e ––– 150 210
Qgs Gate-to-Source Char
e ––– 35 –––
Qgd Gate-to-Drain ("Miller") Char
e ––– 43 –––
RGGate Resistance ––– 1.3 ––– Ω
td(on) Turn-On Delay Time ––– 25 –––
trRise Time ––– 67 –––
td(off) Turn-Off Delay Time ––– 78 –––
tfFall Time ––– 88 –––
Ciss Input Capacitance ––– 9620 –––
Coss Output Capacitance ––– 670 –––
Crss Reverse Transfer Capacitance ––– 250 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
––– 820 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)
h
––– 950 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
ISContinuous Source Current ––– ––– 170
c
(Body Diode)
ISM Pulsed Source Current ––– ––– 670
(Body Diode)
d
VSD Diode Forward Volta
e ––– ––– 1.3 V
trr Reverse Recovery Time ––– 50 75 TJ = 25°C VR = 85V,
––– 60 90 TJ = 125°C IF = 75A
Qrr Reverse Recovery Char
e ––– 94 140 TJ = 25°C di
dt = 100A
µs
––– 140 210 TJ = 125°C
IRRM Reverse Recovery Current ––– 3.5 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is ne
li
ible (turn-on is dominated by LS+LD)
µA
nA
ns
nC
A
pF
ns
nC
Conditions
VDS = 50V, ID = 75A
ID = 75A
VGS = 20V
VGS = -20V
MOSFET symbol
showing the
VDS = 50V
Conditions
VGS = 10V
g
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
i
VGS = 0V, VDS = 0V to 80V
h
TJ = 25°C, IS = 75A, VGS = 0V
g
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 5mA
d
VGS = 10V, ID = 75A
g
VDS = VGS, ID = 250µA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
ID = 75A
RG = 2.6Ω
VGS = 10V
g
VDD = 65V