
IRFB/IRFS/IRFSL59N10D
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 18 ––– ––– S VDS = 50V, ID = 35.4A
QgTotal Gate Charge –– – 76 11 4 ID = 35.4A
Qgs Gate-to-Source Charge ––– 24 36 nC V DS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– 36 54 VGS = 10V,
td(on) Turn-On Delay Time ––– 16 ––– VDD = 50V
trRise Time ––– 90 ––– ID = 35.4A
td(off) Turn-Off Delay Time ––– 20 ––– R G = 2.5Ω
tfFall Time ––– 12 ––– VGS = 10V
Ciss Input Capacitance ––– 2450 ––– VGS = 0V
Coss Output Capacitance ––– 740 ––– V DS = 25V
Crss Reverse Transfer Capacitance ––– 190 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 3370 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 390 ––– V GS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 690 ––– VGS = 0V, V DS = 0V to 80V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 510 mJ
IAR Avalanche Current––– 35.4 A
EAR Repetitive Avalanche Energy––– 20 mJ
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 35.4A, VGS = 0V
trr Reverse Recovery Time ––– 130 2 00 n s TJ = 25°C, IF = 35.4A
Qrr Reverse RecoveryCharge ––– 0.75 1. 1 µC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
59
236 A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 10 0 ––– –– – V VGS = 0V, I D = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.025 ΩVGS = 10V, ID = 35.4A
VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 10 0 VGS = 30V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -30V
IGSS
IDSS Drain-to-Source Leakage Current
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient––– 62
RθJA Junction-to-Ambient––– 40
http://store.iiic.cc/